Our Interests

Advanced Devices

Recently, the collaboration of nanostructured semiconductors and 2-dimention materials are newly challenged for realizing high efficient photovoltaic, photodetectors, chemical and bio sensors, and others. In our researches, Si nanowires, graphene quantum dots, and graphene sheets are utilized to demonstrate high perfomance devices. We demonstrated the operation of p-n junction used only graphene under low voltages, and the application to photodetectors that has the high responsity, quantum efficiencies, and high reponse time for the first time in the world. Recently, we also accomplished to solve the problem to form the uniform top electrode on Si nanowire tips using graphene as the electrode. It has been utilized to many types of sensors. There are many interesting ideas to fabricate fascinating next geration devices.

Selected Papers

 

1. C. O. Kim*, S. W. Hwang*, S. Kim*, D. H. Shin, S. S. Kang, J. M. Kim, C. W. Jang, J. H. Kim, K. W. Lee, S.-H. Choi, and E. Hwang, “High-performance graphene-quantum-dot photodetectors ", Sci. Rep., 5603 (2014).

2. J. Kim, S. D. Oh, J. H. Kim, D. H. Shin, S. Kim, and S.-H. Choi, “Graphene/Si-nanowire heterostructure molecular sensors”, Sci. Rep., 4, 5384 (2014).

3. S. S. Joo, J. Kim, S. S. Kang, S. Kim, S.-H. Choi, and S. W. Hwang, “Graphene-quantum-dot nonvolatile charge-trap flash memories”, Nanotechnology 25, 255203 (2014).

4. C. O. Kim, S. Kim, D. H. Shin, S. S. Kang, J. M. Kim, C. W. Jang, S. S. Joo, J. S. Lee, J. H. Kim, S.-H. Choi, and E. Hwang, “High-performance of all-graphene p-n vertical-junction photodetectors”, accepted for publication in Nature Communication (2014).

5. S. Kim, D. H. Shin, C. O. Kim, S. S. Kang, J. M. Kim, C. W. Jang, S. S. Joo, J. S. Lee, J. H. Kim, S.-H. Choi, and E. Hwang, “Graphene p-n Vertical Tunneling Diodes”, ACS Nano 7, 5168 (2013).

6. C. W. Jang, J. H. Kim, J. M. Kim, D. H. Shin, S. Kim, and S.-H. Choi, “Rapid-thermal-annealing surface treatment for restoring the intrinsic properties of graphene field-effect transistors”, accepted for publication in Nanotechnology (2013).