Journal Articles
These efforts are documented in peer-reviewed journals, advancing both fundamental physics and applied optoelectronics.
2026
19376884
TCJXIC7M
2026
1
apa
50
date
desc
1442
https://nano.khu.ac.kr/wp-content/plugins/zotpress/
%7B%22status%22%3A%22success%22%2C%22updateneeded%22%3Afalse%2C%22instance%22%3Afalse%2C%22meta%22%3A%7B%22request_last%22%3A0%2C%22request_next%22%3A0%2C%22used_cache%22%3Atrue%7D%2C%22data%22%3A%5B%7B%22key%22%3A%22GWKT7D98%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22W.%20U.%20Jeong%2C%20J.%20B.%20Ahn%2C%20T.%20J.%20Jeong%2C%20G.%20B.%20Lee%2C%20S.%20Kim%2C%20and%20S.-H.%20Choi%22%2C%22parsedDate%22%3A%222026%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BW.%20U.%20Jeong%2C%20J.%20B.%20Ahn%2C%20T.%20J.%20Jeong%2C%20G.%20B.%20Lee%2C%20S.%20Kim%2C%20and%20S.-H.%20Choi.%20%282026%29.%20%26lt%3Bi%26gt%3BTemperature-driven%20crossover%20of%20excitonic%20radiative%20channels%20and%20valley%20polarization%20in%20monolayer%20WS%26lt%3Bsub%26gt%3B2%26lt%3B%5C%2Fsub%26gt%3B%26lt%3B%5C%2Fi%26gt%3B.%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Temperature-driven%20crossover%20of%20excitonic%20radiative%20channels%20and%20valley%20polarization%20in%20monolayer%20WS%3Csub%3E2%3C%5C%2Fsub%3E%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22%22%2C%22lastName%22%3A%22W.%20U.%20Jeong%2C%20J.%20B.%20Ahn%2C%20T.%20J.%20Jeong%2C%20G.%20B.%20Lee%2C%20S.%20Kim%2C%20and%20S.-H.%20Choi%22%7D%5D%2C%22abstractNote%22%3A%22%22%2C%22date%22%3A%2212%5C%2F2026%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%22%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%22%22%2C%22language%22%3A%22%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%2C%22ADP8EG2A%22%5D%2C%22dateModified%22%3A%222026-01-18T09%3A19%3A58Z%22%7D%7D%2C%7B%22key%22%3A%22RSJXBKHM%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22C.%20W.%20Jang%2C%20Y.%20A.%20Salawu%2C%20M.%20S.%20Kim%2C%20Q.%20Zhang%2C%20W.%20U.%20Jeong%2C%20J.%20Ahn%2C%20S.-E.%20Lee%2C%20H.%20Son%2C%20J.%20S.%20Lee%2C%20H.-J.%20Kim%2C%20M.-H.%20Jung%2C%20J.%20H.%20Kim%2C%20W.%20H.%20Shon%2C%20J.-S.%20Rhyee%2C%20V.%20T.%20Hoa%2C%20S.%20Cho%2C%20S.%20Kim%2C%20X.%20Wang%2C%20R.%20G.%20Elliman%2C%20E.%20Hwang%2C%20and%20S.-H.%20Choi%2C%22%2C%22parsedDate%22%3A%222026%22%2C%22numChildren%22%3A0%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BC.%20W.%20Jang%2C%20Y.%20A.%20Salawu%2C%20M.%20S.%20Kim%2C%20Q.%20Zhang%2C%20W.%20U.%20Jeong%2C%20J.%20Ahn%2C%20S.-E.%20Lee%2C%20H.%20Son%2C%20J.%20S.%20Lee%2C%20H.-J.%20Kim%2C%20M.-H.%20Jung%2C%20J.%20H.%20Kim%2C%20W.%20H.%20Shon%2C%20J.-S.%20Rhyee%2C%20V.%20T.%20Hoa%2C%20S.%20Cho%2C%20S.%20Kim%2C%20X.%20Wang%2C%20R.%20G.%20Elliman%2C%20E.%20Hwang%2C%20and%20S.-H.%20Choi%2C.%20%282026%29.%20%26lt%3Bi%26gt%3BDimensionality-%20and%20topology-driven%20metal-insulator%20transition%20of%20topological%20Bi0.96Sb0.04%20thin%20films%26lt%3B%5C%2Fi%26gt%3B.%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Dimensionality-%20and%20topology-driven%20metal-insulator%20transition%20of%20topological%20Bi0.96Sb0.04%20thin%20films%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22%22%2C%22lastName%22%3A%22C.%20W.%20Jang%2C%20Y.%20A.%20Salawu%2C%20M.%20S.%20Kim%2C%20Q.%20Zhang%2C%20W.%20U.%20Jeong%2C%20J.%20Ahn%2C%20S.-E.%20Lee%2C%20H.%20Son%2C%20J.%20S.%20Lee%2C%20H.-J.%20Kim%2C%20M.-H.%20Jung%2C%20J.%20H.%20Kim%2C%20W.%20H.%20Shon%2C%20J.-S.%20Rhyee%2C%20V.%20T.%20Hoa%2C%20S.%20Cho%2C%20S.%20Kim%2C%20X.%20Wang%2C%20R.%20G.%20Elliman%2C%20E.%20Hwang%2C%20and%20S.-H.%20Choi%2C%22%7D%5D%2C%22abstractNote%22%3A%22%22%2C%22date%22%3A%2212%5C%2F2026%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%22%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%22%22%2C%22language%22%3A%22%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%2C%22ADP8EG2A%22%5D%2C%22dateModified%22%3A%222026-01-18T09%3A15%3A39Z%22%7D%7D%2C%7B%22key%22%3A%22Z6HT5QAF%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Jeong%20et%20al.%22%2C%22parsedDate%22%3A%222026%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BJeong%2C%20W.%20U.%2C%20Ahn%2C%20J.%20B.%2C%20Jeong%2C%20T.%20J.%2C%20Ryu%2C%20Y.%2C%20%26amp%3B%20Kim%2C%20S.%20%282026%29.%20Composition-tunable%20valley%20polarization%20in%20monolayer%20Mo1-xWxS2%20alloys.%20%26lt%3Bi%26gt%3BCurrent%20Applied%20Physics%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B84%26lt%3B%5C%2Fi%26gt%3B%2C%2012%26%23x2013%3B18.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.cap.2025.12.009%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.cap.2025.12.009%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Composition-tunable%20valley%20polarization%20in%20monolayer%20Mo1-xWxS2%20alloys%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Won%20Uk%22%2C%22lastName%22%3A%22Jeong%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jung%20Bin%22%2C%22lastName%22%3A%22Ahn%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Tae%20Jin%22%2C%22lastName%22%3A%22Jeong%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Yeonhee%22%2C%22lastName%22%3A%22Ryu%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%5D%2C%22abstractNote%22%3A%22We%20report%20a%20systematic%20study%20of%20excitonic%20resonance%20and%20valley%20polarization%20in%20monolayer%20Mo1-xWxS2%20alloys%20with%20compositions%20x%20%3D%200%2C%200.4%2C%200.6%2C%20and%201.0.%20Monolayers%20prepared%20by%20mechanical%20exfoliation%20were%20characterized%20by%20microscopy%2C%20Raman%2C%20and%20X-ray%20photoelectron%20spectroscopy.%20Unpolarized%20photoluminescence%20%28PL%29%20spectra%20show%20a%20progressive%20blueshift%20of%20the%20A-exciton%20peak%20with%20increasing%20W%20content%2C%20consistent%20with%20bandgap%20evolution.%20Circularly%20polarized%20PL%20measurements%20reveal%20valley-selective%20emission%2C%20with%20the%20degree%20of%20valley%20polarization%20%28DVP%29%20defined%20as%20DVP%20%3D%20%28Ico%20Icross%29%5C%2F%28Ico%20%2B%20Icross%29.%20The%20DVP%20exhibits%20a%20maximum%20near%20the%20A-exciton%20resonance%20and%20increases%20from%203.0%20%25%20at%20x%20%3D%200%5Cu201320.4%20%25%20at%20x%20%3D%201.0%2C%20accompanied%20by%20a%20blueshift%20in%20peak%20position.%20The%20enhancement%20is%20attributed%20to%20stronger%20spin%5Cu2013orbit%20coupling%2C%20reduced%20exciton%5Cu2013phonon%20scattering%2C%20and%20alloymodulated%20relaxation.%20These%20findings%20demonstrate%20alloy%20composition%20as%20a%20practical%20tuning%20parameter%20for%20valley%20polarization%20in%202D%20semiconductors%2C%20offering%20guidance%20for%20valleytronic%20and%20chiroptical%20devices.%22%2C%22date%22%3A%2203%5C%2F2026%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.cap.2025.12.009%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS1567173925002688%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2215671739%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T07%3A42%3A39Z%22%7D%7D%2C%7B%22key%22%3A%228VXC53NV%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222026%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20M.%20S.%2C%20Jang%2C%20C.%20W.%2C%20Jeong%2C%20W.%20U.%2C%20Kim%2C%20S.%2C%20Elliman%2C%20R.%20G.%2C%20Hwang%2C%20E.%2C%20Lee%2C%20J.%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282026%29.%20Experimental%20manifestation%20of%20topological%20lifshitz%20transition%20by%20observing%20thickness-dependent%20shift%20of%20plasma%20frequency%20in%20topological%20semimetals.%20%26lt%3Bi%26gt%3BMaterials%20Today%20Physics%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B60%26lt%3B%5C%2Fi%26gt%3B%2C%20101981.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.mtphys.2025.101981%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.mtphys.2025.101981%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Experimental%20manifestation%20of%20topological%20lifshitz%20transition%20by%20observing%20thickness-dependent%20shift%20of%20plasma%20frequency%20in%20topological%20semimetals%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Min%20Seop%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Won%20Uk%22%2C%22lastName%22%3A%22Jeong%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22R.G.%22%2C%22lastName%22%3A%22Elliman%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Euyheon%22%2C%22lastName%22%3A%22Hwang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Seok%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Topological%20semimetals%20%28TSMs%29%2C%20which%20host%20massless%20Dirac%20fermions%2C%20offer%20a%20promising%20platform%20to%20explore%20quantum%20phenomena.%20Topological%20Lifshitz%20transitions%20%28LTs%29%20are%20ubiquitous%2C%20with%20applications%20spanning%20ferromagnetism%2C%20superconductors%2C%20topological%20materials%2C%20and%20even%20high-energy%20physics.%20In%20this%20study%2C%20we%20observe%20a%20topological%20LT%20in%20epitaxial%20thin%20films%20of%20Bi0.96Sb0.04%20without%20external%20excitations%2C%20where%20the%20TSM%20characteristics%20are%20retained%20throughout%20the%20transition.%20The%20LT%20is%20revealed%20by%20a%20thickness-dependent%20shift%20in%20plasma%20frequency%2C%20measured%20through%20terahertz%20%28THz%29%20optical%20conductivity%20spectroscopy.%20Only%20in%20ultrathin%20two-dimensional%20%282D%29%20films%20%28thickness%20%5Cu226410%20nm%29%20does%20the%20emitted%20THz%20wave%20show%20a%20clear%20difference%20between%20left-%20and%20right-circularly%20polarized%20light%2C%20a%20circular%20photogalvanic%20effect%20that%20is%20a%20hallmark%20of%20Weyl%20semimetals.%20Such%20behavior%20signals%20a%20topological%20phase%20transition%20caused%20by%20inversion%20symmetry%20breaking%20in%20films%20with%20thickness%20%5Cu226410%20nm%2C%20thereby%20providing%20experimental%20confirmation%20of%20the%20LT%20in%20TSMs.%20The%20optical%20conductivity%20shows%20a%20similar%20critical%20change%20at%20a%20thickness%20of%2010%20nm%2C%20which%20matches%20the%20thickness-dependent%20trend%20in%20electrical%20conductivity%20measured%20in%20simple%20planar%20devices.%20Finally%2C%20a%20strong%20correlation%20is%20observed%20between%20the%20plasma%20frequency%20and%20carrier%20density%20in%20this%202D%20regime%2C%20consistent%20with%20prior%20theoretical%20predictions.%22%2C%22date%22%3A%2201%5C%2F2026%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.mtphys.2025.101981%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS2542529325003372%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2225425293%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T07%3A42%3A37Z%22%7D%7D%5D%7D
W. U. Jeong, J. B. Ahn, T. J. Jeong, G. B. Lee, S. Kim, and S.-H. Choi. (2026). Temperature-driven crossover of excitonic radiative channels and valley polarization in monolayer WS2.
C. W. Jang, Y. A. Salawu, M. S. Kim, Q. Zhang, W. U. Jeong, J. Ahn, S.-E. Lee, H. Son, J. S. Lee, H.-J. Kim, M.-H. Jung, J. H. Kim, W. H. Shon, J.-S. Rhyee, V. T. Hoa, S. Cho, S. Kim, X. Wang, R. G. Elliman, E. Hwang, and S.-H. Choi,. (2026). Dimensionality- and topology-driven metal-insulator transition of topological Bi0.96Sb0.04 thin films.
Jeong, W. U., Ahn, J. B., Jeong, T. J., Ryu, Y., & Kim, S. (2026). Composition-tunable valley polarization in monolayer Mo1-xWxS2 alloys. Current Applied Physics, 84, 12–18. https://doi.org/10.1016/j.cap.2025.12.009
Kim, M. S., Jang, C. W., Jeong, W. U., Kim, S., Elliman, R. G., Hwang, E., Lee, J. S., & Choi, S.-H. (2026). Experimental manifestation of topological lifshitz transition by observing thickness-dependent shift of plasma frequency in topological semimetals. Materials Today Physics, 60, 101981. https://doi.org/10.1016/j.mtphys.2025.101981
2025
19376884
TCJXIC7M
2025
1
apa
50
date
desc
1442
https://nano.khu.ac.kr/wp-content/plugins/zotpress/
%7B%22status%22%3A%22success%22%2C%22updateneeded%22%3Afalse%2C%22instance%22%3Afalse%2C%22meta%22%3A%7B%22request_last%22%3A0%2C%22request_next%22%3A0%2C%22used_cache%22%3Atrue%7D%2C%22data%22%3A%5B%7B%22key%22%3A%2239INFJAW%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Hwang%20et%20al.%22%2C%22parsedDate%22%3A%222025-01-29%22%2C%22numChildren%22%3A2%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BHwang%2C%20S.%20W.%2C%20Kim%2C%20J.%20M.%2C%20Lee%2C%20H.%2C%20Jang%2C%20C.%20W.%2C%20Jeong%2C%20W.%20U.%2C%20Yoon%2C%20C.-B.%2C%20Kim%2C%20S.%2C%20Hwang%2C%20E.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282025%29.%20Strong%20Enhancement%20of%20Light%20Emission%20in%20Core%26%23x2013%3BShell%20InGaN%5C%2FGaN%20Multi-Quantum-Well%20Nanowire%20Light-Emitting%20Diodes%20by%20Incorporating%20Graphene%20Quantum%20Dots.%20%26lt%3Bi%26gt%3BACS%20Applied%20Materials%20%26amp%3B%20Interfaces%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B17%26lt%3B%5C%2Fi%26gt%3B%284%29%2C%206597%26%23x2013%3B6603.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1021%5C%2Facsami.4c20553%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1021%5C%2Facsami.4c20553%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Strong%20Enhancement%20of%20Light%20Emission%20in%20Core%5Cu2013Shell%20InGaN%5C%2FGaN%20Multi-Quantum-Well%20Nanowire%20Light-Emitting%20Diodes%20by%20Incorporating%20Graphene%20Quantum%20Dots%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%20Won%22%2C%22lastName%22%3A%22Hwang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jin%20Mo%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Hanleem%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Won%20Uk%22%2C%22lastName%22%3A%22Jeong%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chang-Bun%22%2C%22lastName%22%3A%22Yoon%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Euyheon%22%2C%22lastName%22%3A%22Hwang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22One-dimensional%20%281D%29%20vertical%20nitrides%20are%20highly%20attractive%20for%20light-emitting%20diode%20%28LED%29%20applications%20because%20they%20are%20useful%20for%20overcoming%20the%20drawbacks%20of%20conventional%20GaN%20planar%20structures.%20However%2C%20the%20internal%20quantum%20efficiency%20%28IQE%29%20of%20GaN%20multi-quantum-well%20%28MQW%29%20nanowire%20%28NW%29%20LEDs%2C%20typical%201D%20GaN%20structures%2C%20is%20still%20too%20low%20to%20replace%20standard%20planar%20LEDs.%20Here%2C%20we%20report%20a%20phenomenon%20of%20light%20amplification%20from%20core%5Cu2212shell%20InGaN%5C%2F%20GaN%20NW%20LEDs%20by%20incorporating%20graphene%20quantum%20dots%20%28GQDs%29.%20The%20photoluminescence%20%28PL%29%20and%20electroluminescence%20%28EL%29%20intensities%20are%20greatly%20enhanced%20when%20GQDs%20of%205%2C%2010%2C%20and%2020%20nm%20size%20are%20located%20solely%20in%20the%20MQWs%20or%20both%20in%20the%20MQWs%20and%20on%20the%20p-GaN%20surface%2C%20but%20much%20fewer%20PL%20and%20EL%20increases%20are%20observed%20for%2030%20and%2040%20nm%20GQDs%2C%20consistent%20with%20the%20sizedependent%20optical%20output%20power%20%28OOP%29%20and%20light-extraction%20efficiency%20%28LEE%29.%20The%20carrier%20transfer%20between%20GQDs%20and%20MQWs%20is%20strongly%20affected%20by%20the%20sizedependent%20band-gap%20variation%20and%20the%20band%20profile%20depending%20on%20whether%20the%20forward%20bias%20is%20applied%20on%20the%20LED%20or%20not.%20This%20explains%20why%20the%20PL%20and%20EL%20spectra%20show%20different%20size%20dependences%20of%20the%20GQDs.%20The%20variation%20of%20the%20OOP%20by%20the%20inclusion%20of%20GQDs%20in%20the%20LED%20turns%20out%20to%20be%20governed%20by%20the%20IQE%20rather%20than%20by%20the%20LEE.%20Our%20findings%20highlight%20remarkable%20enhancement%20of%20light%20emission%20from%20GaN%20MQW%20NW%20LEDs%20by%20a%20simple%20approach%20of%20incorporating%20GQDs%20in%20the%20MQWs%20and%20on%20the%20p-GaN%20surface%2C%20also%20very%20promising%20for%20applications%20in%20a%20wide%20range%20of%20optoelectronic%20devices.%22%2C%22date%22%3A%222025-01-29%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1021%5C%2Facsami.4c20553%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fpubs.acs.org%5C%2Fdoi%5C%2F10.1021%5C%2Facsami.4c20553%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%221944-8244%2C%201944-8252%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A42%3A19Z%22%7D%7D%2C%7B%22key%22%3A%22M7D2GEPS%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Jeong%20et%20al.%22%2C%22parsedDate%22%3A%222025%22%2C%22numChildren%22%3A2%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BJeong%2C%20T.%20J.%2C%20Jang%2C%20C.%20W.%2C%20Jeong%2C%20W.%20U.%2C%20Hoa%2C%20V.%20T.%2C%20Cho%2C%20S.%2C%20Wang%2C%20X.%2C%20Elliman%2C%20R.%20G.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282025%29.%20Circular%20photogalvanic%20effect%20in%20two-dimensional%20Weyl%20semimetals.%20%26lt%3Bi%26gt%3BMaterials%20Today%20Physics%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B54%26lt%3B%5C%2Fi%26gt%3B%2C%20101730.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.mtphys.2025.101730%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.mtphys.2025.101730%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Circular%20photogalvanic%20effect%20in%20two-dimensional%20Weyl%20semimetals%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Tae%20Jin%22%2C%22lastName%22%3A%22Jeong%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Won%20Uk%22%2C%22lastName%22%3A%22Jeong%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Vu%20Thi%22%2C%22lastName%22%3A%22Hoa%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sunglae%22%2C%22lastName%22%3A%22Cho%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Xiaolin%22%2C%22lastName%22%3A%22Wang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22R.G.%22%2C%22lastName%22%3A%22Elliman%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22As%20a%20host%20of%20massless%20Weyl%20fermions%2C%20two-dimensional%20%282D%29%20Weyl%20semimetals%20%28WSMs%29%20provide%20an%20ideal%20platform%20for%20studying%20exotic%20quantum%20phenomena%20in%20the%20emerging%20field%20of%20Dirac%20physics%2C%20including%20the%20circular%20photogalvanic%20effect%20%28CPGE%29.%20Here%2C%20we%20report%20such%20behavior%20in%20a%202D%20WSM%20created%20in%20Bi0.96Sb0.04%20thin%20films%20by%20a%20thickness-dependent%20topological%20phase%20transition%20caused%20by%20inversion%20symmetry%20breaking.%20Photocurrent%20maps%20and%20line%20profiles%2C%20and%20CPGE%20of%20lateral%20device%20structures%20are%20shown%20to%20depend%20on%20bias%20voltage%20and%20polarity%2C%20and%20to%20be%20well%20described%20by%20bias-dependent%20variations%20of%20the%20band%20profiles%20at%20the%20electrode%5C%2FBiSb%20interfaces.%20Of%20particular%20note%20is%20the%20observation%20that%20the%20CPGE%20exhibits%20helicity-dependent%20behavior%2C%20indicating%20a%20counter-propagating%20distribution%20of%20opposite%20spins%20of%20the%20Weyl%20cones%2C%20which%20originates%20from%20reduced%20symmetry%20in%20the%202D%20film%20structure%20of%20WSMs%20despite%20normal%20incidence%20of%20the%20illumination.%20A%20strong%20thickness-dependent%20responsivity%20is%20also%20observed%20over%20a%20wide%20spectral%20range%20from%20~400%20to%20~950%20nm%2C%20and%20is%20attributed%20to%20the%20linear-dispersion%20of%20the%20Weyl%20cones.%20These%20results%20demonstrate%20manipulation%20of%20photocarrier%20generation%2C%20separation%20and%20transport%20processes%20in%20a%20simple%202D-WSM-based%20planar%20device%20using%20light%20polarization%2C%20bias%20voltage%2C%20and%20film%20thickness%2C%20and%20are%20promising%20for%20energy-harvesting%20devices.%22%2C%22date%22%3A%2205%5C%2F2025%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.mtphys.2025.101730%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS2542529325000860%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2225425293%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A42%3A21Z%22%7D%7D%5D%7D
Hwang, S. W., Kim, J. M., Lee, H., Jang, C. W., Jeong, W. U., Yoon, C.-B., Kim, S., Hwang, E., & Choi, S.-H. (2025). Strong Enhancement of Light Emission in Core–Shell InGaN/GaN Multi-Quantum-Well Nanowire Light-Emitting Diodes by Incorporating Graphene Quantum Dots. ACS Applied Materials & Interfaces, 17(4), 6597–6603. https://doi.org/10.1021/acsami.4c20553
Jeong, T. J., Jang, C. W., Jeong, W. U., Hoa, V. T., Cho, S., Wang, X., Elliman, R. G., Kim, S., & Choi, S.-H. (2025). Circular photogalvanic effect in two-dimensional Weyl semimetals. Materials Today Physics, 54, 101730. https://doi.org/10.1016/j.mtphys.2025.101730
2024
19376884
TCJXIC7M
2024
1
apa
50
date
desc
1442
https://nano.khu.ac.kr/wp-content/plugins/zotpress/
%7B%22status%22%3A%22success%22%2C%22updateneeded%22%3Afalse%2C%22instance%22%3Afalse%2C%22meta%22%3A%7B%22request_last%22%3A0%2C%22request_next%22%3A0%2C%22used_cache%22%3Atrue%7D%2C%22data%22%3A%5B%7B%22key%22%3A%22U7XYHXH8%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Jeong%20et%20al.%22%2C%22parsedDate%22%3A%222024%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BJeong%2C%20T.%20J.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282024%29.%20Temperature%20dependence%20of%20photoluminescence%20in%20twisted%20heterobilayers%20of%20transition-metal%20dichalcogenides.%20%26lt%3Bi%26gt%3BCurrent%20Applied%20Physics%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B60%26lt%3B%5C%2Fi%26gt%3B%2C%209%26%23x2013%3B14.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.cap.2024.01.006%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.cap.2024.01.006%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Temperature%20dependence%20of%20photoluminescence%20in%20twisted%20heterobilayers%20of%20transition-metal%20dichalcogenides%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Tae%20Jin%22%2C%22lastName%22%3A%22Jeong%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Two-dimensional%20%282D%29%20van%20der%20Waals%20transition%20metal%20dichalcogenides%20%28TMDCs%29%20are%20highly%20attractive%20due%20to%20their%20novel%20phenomena%20and%20potential%20device%20applications.%20Especially%2C%20twisted%20heterojunction%20of%20different%202D%20TMDC%20monolayers%20for%20various%20twist%20angles%20%28%5Cu03b8%29%20is%20one%20of%20the%20hot%20issues%20in%20the%20area%20of%202D%20TMDCs%20because%20they%20exhibit%20exotic%20quantum%20behaviors.%20Here%2C%20we%20report%20the%20effect%20of%20temperature%20%28T%29%20on%20the%20%5Cu03b8-dependent%20variation%20of%20photoluminescence%20%28PL%29%20spectra%20of%20MoS2%5C%2FWS2%20heterobilayers.%20The%20PL%20peak-vs-T%20variations%20are%20divided%20into%20three%20%5Cu03b8%20regions.%20Near%20%5Cu03b8%20%3D%200%20and%2060%5Cu25e6%2C%20the%20PL%20peak%20energies%20show%20almost%20monotonically-decreasing%20behaviors%20with%20increasing%20T%2C%20caused%20by%20stronger%20electron-phonon%20interactions%20at%20higher%20T.%20However%2C%20in%20the%20intermediate%20%5Cu03b8%20range%2C%20the%20PL%20peaks%20show%20similar%20red%20shifts%20over%20almost%20full%20T%20range%20except%20anomalous%20blue%20shifts%20in%20a%20short%20T%20range%20near%20~150%20K.%20We%20discuss%20this%20anomalous%20PL%20behaviors%20based%20on%20hybridization%20of%20interlayer%20and%20intralayer%20excitons%2C%20resulting%20in%20the%20formation%20of%20hybridized%20excitons%2C%20correlated%20with%20structural%20transition.%22%2C%22date%22%3A%2204%5C%2F2024%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.cap.2024.01.006%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS1567173924000063%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2215671739%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A41%3A59Z%22%7D%7D%2C%7B%22key%22%3A%22CHMMFMXC%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Jeong%20et%20al.%22%2C%22parsedDate%22%3A%222024%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BJeong%2C%20T.%20J.%2C%20Jang%2C%20C.%20W.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282024%29.%20Thickness-dependent%20variations%20of%20atomic%20vibration%2C%20band-edge%20excitonic%20emission%2C%20and%20valleytronic%20response%20in%20layered%20Mo0.55W0.45S2%20ternary%20compounds.%20%26lt%3Bi%26gt%3BJournal%20of%20Alloys%20and%20Compounds%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B976%26lt%3B%5C%2Fi%26gt%3B%2C%20173142.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.jallcom.2023.173142%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.jallcom.2023.173142%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Thickness-dependent%20variations%20of%20atomic%20vibration%2C%20band-edge%20excitonic%20emission%2C%20and%20valleytronic%20response%20in%20layered%20Mo0.55W0.45S2%20ternary%20compounds%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Tae%20Jin%22%2C%22lastName%22%3A%22Jeong%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Two-dimensional%20%282D%29%20van%20der%20Waals%20transition%20metal%20dichalcogenides%20%28TMDs%29%20are%20highly%20attractive%20due%20to%20their%20novel%20phenomena%20and%20potential%20device%20applications%2C%20but%20most%20of%20the%20studies%20are%20focused%20on%20binary%20TMDs%20except%20a%20few%20reports%20on%20ternary%20TMDs.%20Here%2C%20we%20report%20thickness-dependent%20mono-to-multi-layer%20transition%20behaviors%20of%20mechanically-exfoliated%20ternary%20TMD%20Mo0.55W0.45S2.%20Dependences%20of%20Raman%20modes%20and%20their%20peak%20intervals%20on%20thickness%20%28d%29%20are%20divided%20into%20three%20regions%20%281.5%20%5Cu2264%20d%20%5Cu2264%209.2%2C%209.2%20%26lt%3B%20d%20%5Cu2264%2034%2C%20and%20%26gt%3B%2034%20nm%29%2C%20mostly%20resulting%20from%20the%20increase%20of%20van%20der%20Waals%20force%20and%20long-range%20Coulomb%20force%20in%20interlayer%20interactions%20at%20larger%20d.%20Photoluminescence%20%28PL%29%20peak%20and%20its%20intensity%5C%2Ffull%20width%20at%20half%20maximum%20show%20similar%20three-region%20behaviors%2C%20which%20are%20associated%20with%20direct-to-indirect-bandgap%20transition%20as%20d%20increases.%20In%20particular%2C%20critical%20changes%20in%20the%20Raman%20scattering%20and%20PL%20occur%20at%20d%20%3D%209.2%20nm%20%288%5Cu201313%20layers%29%2C%20meaning%20a%202D-to-3D%20transition.%20The%20effect%20of%20the%20valley%20polarization%20is%20observed%20up%20to%20d%20%3D%208.1%20nm%20%287%5Cu201311%20layers%29%2C%20resulting%20from%20random%20mixing-induced%20suppression%20of%20the%20inversion%20symmetry%20in%20the%20multilayer.%20These%20results%20suggest%20that%20the%20critical%20layer%20number%20for%20the%202D-to-3D%20dimensional%20crossover%20in%20ternary%20Mo0.55W0.45S2%20is%20considerably%20larger%20than%20in%20binary%20TMDs%2C%20thereby%20exhibiting%20the%20direct-bandgap%20nature%20in%20an%20extended%20range%20of%20layer%20number%2C%20more%20useful%20for%20their%20optoelectronic%20device%20applications.%22%2C%22date%22%3A%2203%5C%2F2024%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.jallcom.2023.173142%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS0925838823044456%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2209258388%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A42%3A02Z%22%7D%7D%5D%7D
Jeong, T. J., Kim, S., & Choi, S.-H. (2024). Temperature dependence of photoluminescence in twisted heterobilayers of transition-metal dichalcogenides. Current Applied Physics, 60, 9–14. https://doi.org/10.1016/j.cap.2024.01.006
Jeong, T. J., Jang, C. W., Kim, S., & Choi, S.-H. (2024). Thickness-dependent variations of atomic vibration, band-edge excitonic emission, and valleytronic response in layered Mo0.55W0.45S2 ternary compounds. Journal of Alloys and Compounds, 976, 173142. https://doi.org/10.1016/j.jallcom.2023.173142
2023
19376884
TCJXIC7M
2023
1
apa
50
date
desc
1442
https://nano.khu.ac.kr/wp-content/plugins/zotpress/
%7B%22status%22%3A%22success%22%2C%22updateneeded%22%3Afalse%2C%22instance%22%3Afalse%2C%22meta%22%3A%7B%22request_last%22%3A0%2C%22request_next%22%3A0%2C%22used_cache%22%3Atrue%7D%2C%22data%22%3A%5B%7B%22key%22%3A%226ET36DIL%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Jang%20et%20al.%22%2C%22parsedDate%22%3A%222023%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BJang%2C%20C.%20W.%2C%20Salawu%2C%20Y.%20A.%2C%20Kim%2C%20J.%20H.%2C%20Nguyen%2C%20V.%20Q.%2C%20Kim%2C%20M.%20S.%2C%20Lee%2C%20S.%2C%20Son%2C%20H.%2C%20Kim%2C%20H.%2C%20Rhyee%2C%20J.%2C%20Hoa%2C%20V.%20T.%2C%20Cho%2C%20S.%2C%20Lee%2C%20J.%20S.%2C%20Jung%2C%20M.%2C%20Shon%2C%20W.%20H.%2C%20Jeong%2C%20T.%20J.%2C%20Kim%2C%20S.%2C%20Yum%2C%20H.%2C%20Kim%2C%20J.%20H.%2C%20Wang%2C%20X.%2C%20%26%23x2026%3B%20Choi%2C%20S.%20%282023%29.%202D%20Weyl%26%23x2010%3BSemimetal%20States%20Achieved%20by%20a%20Thickness%26%23x2010%3BDependent%20Crossover%20and%20Topological%20Phase%20Transition%20in%20Bi%26lt%3Bsub%26gt%3B0.96%26lt%3B%5C%2Fsub%26gt%3B%20Sb%26lt%3Bsub%26gt%3B0.04%26lt%3B%5C%2Fsub%26gt%3B%20Thin%20Films.%20%26lt%3Bi%26gt%3BAdvanced%20Functional%20Materials%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B33%26lt%3B%5C%2Fi%26gt%3B%2851%29%2C%202305179.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1002%5C%2Fadfm.202305179%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1002%5C%2Fadfm.202305179%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%222D%20Weyl%5Cu2010Semimetal%20States%20Achieved%20by%20a%20Thickness%5Cu2010Dependent%20Crossover%20and%20Topological%20Phase%20Transition%20in%20Bi%3Csub%3E0.96%3C%5C%2Fsub%3E%20Sb%3Csub%3E0.04%3C%5C%2Fsub%3E%20Thin%20Films%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Yusuff%20Adeyemi%22%2C%22lastName%22%3A%22Salawu%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jin%20Hee%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Van%20Quang%22%2C%22lastName%22%3A%22Nguyen%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Min%20Seop%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sang%5Cu2010Eon%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Hyebin%22%2C%22lastName%22%3A%22Son%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Heon%5Cu2010Jung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%5Cu2010Soo%22%2C%22lastName%22%3A%22Rhyee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Vu%20Thi%22%2C%22lastName%22%3A%22Hoa%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sunglae%22%2C%22lastName%22%3A%22Cho%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Seok%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Myung%5Cu2010Hwa%22%2C%22lastName%22%3A%22Jung%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Won%20Hyuk%22%2C%22lastName%22%3A%22Shon%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Tae%20Jin%22%2C%22lastName%22%3A%22Jeong%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Han%5Cu2010Yup%22%2C%22lastName%22%3A%22Yum%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jung%20Ho%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Xiaolin%22%2C%22lastName%22%3A%22Wang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22R.%20G.%22%2C%22lastName%22%3A%22Elliman%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sang%20J.%22%2C%22lastName%22%3A%22Park%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Junseok%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Hyungyu%22%2C%22lastName%22%3A%22Jin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk%5Cu2010Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Abstract%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20Despite%20theoretical%20expectations%20for%202D%20Weyl%20semimetals%20%28WSMs%29%2C%20realizing%20stable%202D%20topological%20semimetal%20states%20experimentally%20is%20currently%20a%20great%20challenge.%20Here%2C%202D%20WSM%20states%20achieved%20by%20a%20thickness%5Cu2010dependent%20topological%20phase%20transition%20from%203D%20Dirac%20semimetal%20to%202D%20WSM%20in%20molecular%5Cu2010beam%5Cu2010epitaxy%5Cu2010grown%20Bi%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%200.96%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20Sb%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%200.04%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20thin%20films%20are%20reported.%202D%20weak%20anti%5Cu2010localization%20%28WAL%29%20and%20chiral%20anomaly%20arise%20in%20the%20Bi%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%200.96%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20Sb%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%200.04%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20films%20for%20thicknesses%20below%20%5Cu224810%5Cu00a0nm%2C%20supporting%202D%20Weyl%20semimetallic%20transport%20in%20the%20films.%20This%20is%20particularly%20evident%20from%20magnetoresistance%20%28MR%29%20measurements%20which%20show%20cusp%20structures%20at%20around%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20B%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%3D%200%2C%20indicating%20WAL%2C%20and%20negative%20MR%2C%20typical%20of%20chiral%20anomaly%2C%20only%20for%20layers%20with%20thicknesses%20below%20%5Cu224810%5Cu00a0nm.%20The%20temperature%20dependencies%20of%20the%20dephasing%20length%20for%20various%20thicknesses%20are%20consistent%20with%20those%20of%20the%20MR.%20Analysis%20based%20on%20second%20harmonic%20generation%2C%20terahertz%20emission%2C%20Seebeck%5C%2FHall%20effects%2C%20Raman%20scattering%2C%20X%5Cu2010ray%20diffraction%2C%20and%20X%5Cu2010ray%20photoemission%20demonstrates%20that%20the%20Dirac%5Cu2010%20to%20Weyl%5Cu2010semimetal%20phase%20transition%20for%20films%20thinner%20than%20%5Cu224810%5Cu00a0nm%20is%20induced%20by%20inversion%5Cu2010symmetry%20breaking%20due%20to%20the%20lattice%5Cu2010mismatch%20strain%20between%20the%20Bi%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%200.96%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20Sb%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%200.04%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20film%20and%20substrate.%20The%20realization%20of%202D%20WSMs%20is%20particularly%20significant%20for%20applications%20in%20high%5Cu2010speed%20electronics%2C%20spintronics%2C%20and%20quantum%20computations%20due%20to%20their%20high%20mobility%2C%20chiral%20spin%2C%20and%20topologically%5Cu2010protected%20quantum%20qubits.%22%2C%22date%22%3A%2212%5C%2F2023%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1002%5C%2Fadfm.202305179%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fadvanced.onlinelibrary.wiley.com%5C%2Fdoi%5C%2F10.1002%5C%2Fadfm.202305179%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%221616-301X%2C%201616-3028%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A41%3A46Z%22%7D%7D%5D%7D
Jang, C. W., Salawu, Y. A., Kim, J. H., Nguyen, V. Q., Kim, M. S., Lee, S., Son, H., Kim, H., Rhyee, J., Hoa, V. T., Cho, S., Lee, J. S., Jung, M., Shon, W. H., Jeong, T. J., Kim, S., Yum, H., Kim, J. H., Wang, X., … Choi, S. (2023). 2D Weyl‐Semimetal States Achieved by a Thickness‐Dependent Crossover and Topological Phase Transition in Bi0.96 Sb0.04 Thin Films. Advanced Functional Materials, 33(51), 2305179. https://doi.org/10.1002/adfm.202305179
2022
19376884
TCJXIC7M
2022
1
apa
50
date
desc
1442
https://nano.khu.ac.kr/wp-content/plugins/zotpress/
%7B%22status%22%3A%22success%22%2C%22updateneeded%22%3Afalse%2C%22instance%22%3Afalse%2C%22meta%22%3A%7B%22request_last%22%3A0%2C%22request_next%22%3A0%2C%22used_cache%22%3Atrue%7D%2C%22data%22%3A%5B%7B%22key%22%3A%22FY9J7RAY%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Ko%20et%20al.%22%2C%22parsedDate%22%3A%222022-05-24%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKo%2C%20J.%20S.%2C%20Jang%2C%20C.%20W.%2C%20Lee%2C%20W.%20J.%2C%20Kim%2C%20J.%20K.%2C%20Kim%2C%20H.%20K.%2C%20Liu%2C%20B.%2C%20Lu%2C%20Y.%2C%20Crosse%2C%20J.%20A.%2C%20Moon%2C%20P.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282022%29.%20Blue-shifted%20and%20strongly-enhanced%20light%20emission%20in%20transition-metal%20dichalcogenide%20twisted%20heterobilayers.%20%26lt%3Bi%26gt%3BNpj%202D%20Materials%20and%20Applications%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B6%26lt%3B%5C%2Fi%26gt%3B%281%29%2C%2036.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1038%5C%2Fs41699-022-00308-6%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1038%5C%2Fs41699-022-00308-6%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Blue-shifted%20and%20strongly-enhanced%20light%20emission%20in%20transition-metal%20dichalcogenide%20twisted%20heterobilayers%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jung%20Sun%22%2C%22lastName%22%3A%22Ko%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Won%20Jun%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jae%20Kuk%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Hyeong%20Ku%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Boqing%22%2C%22lastName%22%3A%22Liu%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Yuerui%22%2C%22lastName%22%3A%22Lu%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22J.%20A.%22%2C%22lastName%22%3A%22Crosse%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Pilkyung%22%2C%22lastName%22%3A%22Moon%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Abstract%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20Moir%5Cu00e9%20heterostructures%20produced%20by%20twisted%20heterojunction%20of%20transition-metal%20dichalcogenides%20are%20recognized%20as%20novel%20platforms%20for%20unique%20and%20tunable%20means%20of%20controlling%20the%20optical%20phenomena%20including%20photoluminescence%20%28PL%29.%20Despite%20some%20interesting%20results%20on%20the%20PL%20peak%20shifts%20by%20the%20heterojunction%20at%20twist%20angles%20%28%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%5Cu03b8%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%29%20far%20from%200%20or%2060%5Cu00b0%2C%20all%20of%20them%20are%20redshifts.%20Here%2C%20we%20first%20report%20blue%20shift%20of%20energy%20and%20strong%20enhancement%20of%20intensity%20in%20the%20PL%20by%20twisted%20heterojunction%20of%20MoS%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20and%20WS%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20monolayers%20%28MLs%29%20in%20a%20particular%20range%20of%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%5Cu03b8%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20.%20The%20PL%20peak%20energy%20of%20the%20heterobilayer%20steeply%20increases%20%28about%20120%5Cu2009meV%29%20as%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%5Cu03b8%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20gets%20closer%20to%2015%20or%2052%5Cu00b0%20from%203%20or%2057%5Cu00b0%2C%20respectively%20and%20reaches%20a%20plateau%20at%20around%202.01%5Cu2009eV%20in%20the%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%5Cu03b8%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20range%20from%2015%20to%2052%5Cu00b0%2C%20higher%20than%20that%20of%20the%20separate%20MoS%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20or%20WS%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20ML.%20The%20PL%20intensity%20shows%20a%20similar%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%5Cu03b8%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20-dependent%20behavior%20with%20its%20magnitude%20in%20the%20plateau%20being%20%5Cu223c4%20or%2080%20times%20larger%20than%20that%20of%20the%20WS%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20or%20MoS%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20ML%2C%20respectively.%20These%20novel%20light-emission%20behaviors%20are%20well%20explained%20with%20reference%20to%20theoretical%20predictions%20on%20the%20avoided%20crossing%20between%20the%20intralayer%20and%20interlayer%20excitons.%20Our%20findings%20highlight%20extendable%20tuning%20and%20remarkable%20enhancement%20of%20light%20emission%20from%20two-dimensional%20semiconductors%20by%20a%20simple%20approach%20of%20twisted%20heterojunction%20in%20a%20proper%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%5Cu03b8%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20range%2C%20very%20useful%20for%20their%20optoelectronic%20device%20applications.%22%2C%22date%22%3A%222022-05-24%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1038%5C%2Fs41699-022-00308-6%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fwww.nature.com%5C%2Farticles%5C%2Fs41699-022-00308-6%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%222397-7132%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A41%3A27Z%22%7D%7D%2C%7B%22key%22%3A%22R27MAF7L%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Jang%20et%20al.%22%2C%22parsedDate%22%3A%222022%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BJang%2C%20C.%20W.%2C%20Lee%2C%20W.%20J.%2C%20Kim%2C%20J.%20K.%2C%20Park%2C%20S.%20M.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282022%29.%20Growth%20of%20two-dimensional%20Janus%20MoSSe%20by%20a%20single%20in%20situ%20process%20without%20initial%20or%20follow-up%20treatments.%20%26lt%3Bi%26gt%3BNPG%20Asia%20Materials%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B14%26lt%3B%5C%2Fi%26gt%3B%281%29%2C%2015.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1038%5C%2Fs41427-022-00363-x%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1038%5C%2Fs41427-022-00363-x%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Growth%20of%20two-dimensional%20Janus%20MoSSe%20by%20a%20single%20in%20situ%20process%20without%20initial%20or%20follow-up%20treatments%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Won%20Jun%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jae%20Kuk%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sang%20Minh%22%2C%22lastName%22%3A%22Park%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Two-dimensional%20%282D%29%20Janus%20transition%20metal%20dichalcogenides%20%28TMDCs%29%20are%20highly%20attractive%20as%20an%20emerging%20class%20of%202D%20materials%2C%20but%20only%20a%20few%20methods%20are%20available%20for%20fabricating%20them.%20These%20methods%20rely%20on%20the%20initial%20growth%20of%202D%20TMDCs%20in%20one%20process%2C%20followed%20by%20an%20additional%20plasma%20or%20high-temperature%20%28T%29%20process.%20To%20overcome%20these%20drawbacks%2C%20we%20employ%20the%20new%20approach%20of%20NaCl-assisted%20single-process%20chemical%20vapor%20deposition%2C%20which%20consists%20of%20three%20steps%20that%20proceed%20only%20by%20altering%20the%20temperature%20in%20situ.%20In%20the%20%5Cufb01rst%20step%2C%20MoS2%20is%20deposited%20onto%20a%20SiO2%5C%2FSi%20substrate%20with%20the%20Mo%20and%20S%20atoms%20activated%20in%20different%20temperature%20zones.%20In%20the%20second%20step%2C%20S%20vacancies%20are%20formed%20in%20the%20upper%20layer%20of%20the%20grown%20MoS2%20by%20annealing.%20In%20the%20third%20step%2C%20the%20vacancies%20are%20%5Cufb01lled%20with%20activated%20Se%20atoms.%20Throughout%20the%20steps%2C%20NaCl%20lowers%20the%20melting%20point%20of%20the%20constituent%20atoms%2C%20while%20the%20T%20in%20each%20zone%20is%20properly%20controlled.%20The%20growth%20mechanism%20is%20clari%5Cufb01ed%20by%20a%20separate%20annealing%20experiment%20that%20does%20not%20involve%20a%20supply%20of%20activated%20atoms.%20These%20results%20highlight%20a%20simple%20and%20cost-effective%20approach%20for%20growing%20Janus%20MoSSe%2C%20which%20is%20more%20useful%20for%20fundamental%20studies%20and%20device%20applications.%22%2C%22date%22%3A%2212%5C%2F2022%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1038%5C%2Fs41427-022-00363-x%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fwww.nature.com%5C%2Farticles%5C%2Fs41427-022-00363-x%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%221884-4049%2C%201884-4057%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A41%3A12Z%22%7D%7D%2C%7B%22key%22%3A%22WZWMBP7D%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Lee%20et%20al.%22%2C%22parsedDate%22%3A%222022%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BLee%2C%20W.%20J.%2C%20Salawu%2C%20Y.%20A.%2C%20Kim%2C%20H.-J.%2C%20Jang%2C%20C.%20W.%2C%20Kim%2C%20S.%2C%20Ratcliff%2C%20T.%2C%20Elliman%2C%20R.%20G.%2C%20Yue%2C%20Z.%2C%20Wang%2C%20X.%2C%20Lee%2C%20S.-E.%2C%20Jung%2C%20M.-H.%2C%20Rhyee%2C%20J.-S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282022%29.%20Possible%20permanent%20Dirac-%20to%20Weyl-semimetal%20phase%20transition%20by%20ion%20implantation.%20%26lt%3Bi%26gt%3BNPG%20Asia%20Materials%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B14%26lt%3B%5C%2Fi%26gt%3B%281%29%2C%2031.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1038%5C%2Fs41427-022-00380-w%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1038%5C%2Fs41427-022-00380-w%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Possible%20permanent%20Dirac-%20to%20Weyl-semimetal%20phase%20transition%20by%20ion%20implantation%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Won%20Jun%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Yusuff%20Adeyemi%22%2C%22lastName%22%3A%22Salawu%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Heon-Jung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Thomas%22%2C%22lastName%22%3A%22Ratcliff%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Robert%20G.%22%2C%22lastName%22%3A%22Elliman%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Zengji%22%2C%22lastName%22%3A%22Yue%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Xiaolin%22%2C%22lastName%22%3A%22Wang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sang-Eon%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Myung-Hwa%22%2C%22lastName%22%3A%22Jung%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong-Soo%22%2C%22lastName%22%3A%22Rhyee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Three-dimensional%20%283D%29%20topological%20semimetals%20%28TSMs%29%20are%20a%20new%20class%20of%20Dirac%20materials%20that%20can%20be%20viewed%20as%203D%20graphene%20and%20are%20referred%20to%20as%20Dirac%20semimetals%20%28DSMs%29%20or%20Weyl%20semimetals%20%28WSMs%29%20depending%20on%20whether%20time%20reversal%20symmetry%20and%5C%2For%20inversion%20symmetry%20are%20protected%2C%20respectively.%20Despite%20some%20interesting%20results%20on%20Dirac-%20to%20Weyl-semimetal%20phase%20transitions%20under%20conditions%20of%20low%20temperature%20or%20strong%20magnetic%20%5Cufb01eld%20%28B%29%2C%20all%20of%20them%20are%20reversible%20phenomena.%20Here%2C%20we%20report%20for%20the%20%5Cufb01rst%20time%20a%20possible%20permanent%20transition%20in%20a%20single%20TSM%20by%20ion%20implantation.%20A%20Dirac-%20to%20Weyl-semimetal%20phase%20transition%20in%20a%20Bi0.96Sb0.04%20DSM%20results%20from%20inversion-symmetry%20breaking%20induced%20by%20implantation%20with%20nonmagnetic%20Au%20ions%20for%20implant%20%5Cufb02uences%20%28%5Cu03d5G%29%20%5Cu2265%203.2%20%5Cu00d7%201016%20Au%20cm%5Cu22122.%20This%20phenomenon%20is%20evidenced%20by%20the%20%5Cu03d5G-dependent%20behavior%20of%20the%20Raman%20spectra%20and%20quantum-oscillation%20parameters%20extracted%20from%20magnetoresistance%20%28MR%29%20measurements%2C%20which%20show%20abrupt%20changes%20at%20%5Cu03d5G%20%5Cu2265%203.2%20%5Cu00d7%201016%20Au%20cm%5Cu22122.%20The%20veri%5Cufb01cation%20of%20the%20transition%20is%20further%20supported%20by%20observations%20of%20negative%20MR%20in%20the%20longitudinal%20B%20%5C%2F%5C%2F%20electric%20%5Cufb01eld%20orientation%2C%20indicating%20the%20existence%20of%20a%20chiral%20anomaly%20in%20Weyl%20fermions%20induced%20by%20implantation%20with%20nonmagnetic%20Au%20ions.%20In%20contrast%2C%20implantation%20with%20magnetic%20Mn%20ions%20exhibits%20no%20such%20particular%20behavior.%20Our%20%5Cufb01ndings%20demonstrate%20the%20%5Cufb01rst%20realization%20of%20a%20possible%20permanent%20DSM-to-WSM%20phase%20transition%20in%20a%20single%20material%20by%20the%20simple%20approach%20of%20implantation%20using%20nonmagnetic%20elements.%22%2C%22date%22%3A%2212%5C%2F2022%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1038%5C%2Fs41427-022-00380-w%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fwww.nature.com%5C%2Farticles%5C%2Fs41427-022-00380-w%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%221884-4049%2C%201884-4057%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A41%3A14Z%22%7D%7D%5D%7D
Ko, J. S., Jang, C. W., Lee, W. J., Kim, J. K., Kim, H. K., Liu, B., Lu, Y., Crosse, J. A., Moon, P., Kim, S., & Choi, S.-H. (2022). Blue-shifted and strongly-enhanced light emission in transition-metal dichalcogenide twisted heterobilayers. Npj 2D Materials and Applications, 6(1), 36. https://doi.org/10.1038/s41699-022-00308-6
Jang, C. W., Lee, W. J., Kim, J. K., Park, S. M., Kim, S., & Choi, S.-H. (2022). Growth of two-dimensional Janus MoSSe by a single in situ process without initial or follow-up treatments. NPG Asia Materials, 14(1), 15. https://doi.org/10.1038/s41427-022-00363-x
Lee, W. J., Salawu, Y. A., Kim, H.-J., Jang, C. W., Kim, S., Ratcliff, T., Elliman, R. G., Yue, Z., Wang, X., Lee, S.-E., Jung, M.-H., Rhyee, J.-S., & Choi, S.-H. (2022). Possible permanent Dirac- to Weyl-semimetal phase transition by ion implantation. NPG Asia Materials, 14(1), 31. https://doi.org/10.1038/s41427-022-00380-w
2021
19376884
TCJXIC7M
2021
1
apa
50
date
desc
1442
https://nano.khu.ac.kr/wp-content/plugins/zotpress/
%7B%22status%22%3A%22success%22%2C%22updateneeded%22%3Afalse%2C%22instance%22%3Afalse%2C%22meta%22%3A%7B%22request_last%22%3A0%2C%22request_next%22%3A0%2C%22used_cache%22%3Atrue%7D%2C%22data%22%3A%5B%7B%22key%22%3A%22G3BZXR3R%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Ko%20et%20al.%22%2C%22parsedDate%22%3A%222021%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKo%2C%20J.%20S.%2C%20Shin%2C%20D.%20H.%2C%20Lee%2C%20W.%20J.%2C%20Jang%2C%20C.%20W.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282021%29.%20All-two-dimensional%20semitransparent%20and%20flexible%20photodetectors%20employing%20graphene%5C%2FMoS2%5C%2Fgraphene%20vertical%20heterostructures.%20%26lt%3Bi%26gt%3BJournal%20of%20Alloys%20and%20Compounds%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B864%26lt%3B%5C%2Fi%26gt%3B%2C%20158118.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.jallcom.2020.158118%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.jallcom.2020.158118%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22All-two-dimensional%20semitransparent%20and%20flexible%20photodetectors%20employing%20graphene%5C%2FMoS2%5C%2Fgraphene%20vertical%20heterostructures%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jung%20Sun%22%2C%22lastName%22%3A%22Ko%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Won%20Jun%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22As%20human%20society%20develops%2C%20electronic%5C%2Foptoelectronic%20devices%20are%20further%20required%20to%20be%20foldable%2C%20wearable%2C%20and%20even%20visually%20comfortable%2C%20but%20simultaneous%20achievement%20of%20both%20performance%20and%20comfort%20is%20a%20tough%20task.%20Here%2C%20we%20first%20report%20all-two-dimensional%20%282D%29%20bis%20%28trifluoromethanesulfonyl%29-amide%20%28TFSA%29-doped%20graphene%20%28GR%29%20%28TFSA-GR%29%5C%2FMoS2%5C%2F%20triethylene%20tetramine%20%28TETA%29-doped%20GR%20%28TETA-GR%29%20vertical-heterostructure%20semitransparent%20photodetectors%20%28PDs%29%20on%20rigid%5C%2Fflexible%20substrates.%20The%20PD%20exhibits%200.128%20A%5C%2FW%20responsivity%20%28R%29%20and%201.69%20%5Cu00d7%20109%20cm%20Hz1%5C%2F2%5C%2FW%20detectivity%20at%20532%20nm%20wavelength%20with%20average%20visible%20transmittance%20being%2058%25.%20By%20adding%20an%20Al%20reflective%20mirror%20to%20the%20semitransparent%20PD%2C%20the%20R%20is%20improved%20to%200.137%20A%5C%2FW.%20The%20unencapsulated%20PD%20maintains%20~75%25%20of%20its%20initial%20R%20under%2025%20%5Cu00b0C%5C%2F30%25%20relative%20humidity%20for%201000%20h.%20The%20flexible%20PD%20shows%20excellent%20bending%20stability%20by%20maintaining%2032%25%20of%20its%20initial%20R%20even%20after%202000%20bending%20cycles%20at%20a%20radius%20of%20curvature%20of%202%20mm.%20These%20results%20suggest%20that%20the%20all-2D%20TFSA-GR%5C%2FMoS2%5C%2FTETA-GR%20vertical%20heterostructures%20are%20very%20promising%20for%20their%20applications%20in%20flexible%2C%20foldable%2C%20and%5C%2For%20semitransparent%20electronic%5C%2Foptoelectronic%20appliances.%22%2C%22date%22%3A%2205%5C%2F2021%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.jallcom.2020.158118%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS0925838820344819%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2209258388%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A40%3A56Z%22%7D%7D%5D%7D
Ko, J. S., Shin, D. H., Lee, W. J., Jang, C. W., Kim, S., & Choi, S.-H. (2021). All-two-dimensional semitransparent and flexible photodetectors employing graphene/MoS2/graphene vertical heterostructures. Journal of Alloys and Compounds, 864, 158118. https://doi.org/10.1016/j.jallcom.2020.158118
2020
19376884
TCJXIC7M
2020
1
apa
50
date
desc
1442
https://nano.khu.ac.kr/wp-content/plugins/zotpress/
%7B%22status%22%3A%22success%22%2C%22updateneeded%22%3Afalse%2C%22instance%22%3Afalse%2C%22meta%22%3A%7B%22request_last%22%3A0%2C%22request_next%22%3A0%2C%22used_cache%22%3Atrue%7D%2C%22data%22%3A%5B%7B%22key%22%3A%22L3PMN6Y5%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Shin%20et%20al.%22%2C%22parsedDate%22%3A%222020-02-21%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BShin%2C%20D.%20H.%2C%20Shin%2C%20S.%20H.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282020%29.%20High-performance%20and%20-stability%20graphene%20quantum%20dots-mixed%20conducting%20polymer%5C%2Fporous%20Si%20hybrid%20solar%20cells%20with%20titanium%20oxide%20passivation%20layer.%20%26lt%3Bi%26gt%3BNanotechnology%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B31%26lt%3B%5C%2Fi%26gt%3B%289%29%2C%20095202.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F1361-6528%5C%2Fab5838%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F1361-6528%5C%2Fab5838%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22High-performance%20and%20-stability%20graphene%20quantum%20dots-mixed%20conducting%20polymer%5C%2Fporous%20Si%20hybrid%20solar%20cells%20with%20titanium%20oxide%20passivation%20layer%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seung%20Hyun%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Recently%2C%20conducting%20polymer%5C%2FSi%20hybrid%20solar%20cells%20%28HSCs%29%20based%20on%20simple%20fabrication%20processes%20have%20become%20highly%20attractive%20due%20to%20their%20low%20cost%2C%20but%20low%20conductivity%20of%20the%20polymer%2C%20high%20re%5Cufb02ection%20index%20of%20Si%2C%20and%20large%20recombination%20loss%20on%20the%20Si%20back%20contact%20are%20major%20drawbacks%20that%20should%20be%20solved%20for%20the%20practical%20applications.%20Here%2C%20we%20%5Cufb01rst%20report%20HSCs%20composed%20of%20graphene%20quantum%20dots%20%28GQDs%29-mixed%20poly%20%283%2C4-ethylenedioxythiophene%29%20%28PEDOT%3AGQDs%29%5C%2F%20porous%20Si%20%28PSi%29%5C%2Fn-Si%5C%2Ftitanium%20oxide%20%28TiOx%2C%20back%20passivation%20layer%29.%20Maximum%20power%20conversion%20ef%5Cufb01ciency%20%28PCE%29%20of%2010.49%25%20is%20obtained%20from%20the%20HSCs%20at%20an%20active%20area%20of%205%20mm2%2C%20resulting%20from%20the%20enhanced%20conductivity%20of%20the%20PEDOT%3AGQDs%2C%20the%20reduced%20re%5Cufb02ectivity%20of%20Si%20%28the%20increased%20absorption%29%20by%20the%20formation%20of%20PSi%2C%20and%20the%20prevented%20recombination%20loss%20at%20the%20Si%20backside%20due%20to%20the%20passivation.%20In%20addition%2C%20the%20HSCs%20of%2016%20mm2%20active%20area%20maintain%20%5Cu223c78%25%20%28absolutely%20from%208.03%25%20to%206.28%25%29%20of%20the%20initial%20PCE%20even%20while%20kept%20under%20ambient%20conditions%20for%2015%20d.%22%2C%22date%22%3A%222020-02-21%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1088%5C%2F1361-6528%5C%2Fab5838%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fiopscience.iop.org%5C%2Farticle%5C%2F10.1088%5C%2F1361-6528%5C%2Fab5838%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220957-4484%2C%201361-6528%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A40%3A42Z%22%7D%7D%5D%7D
Shin, D. H., Shin, S. H., Kim, S., & Choi, S.-H. (2020). High-performance and -stability graphene quantum dots-mixed conducting polymer/porous Si hybrid solar cells with titanium oxide passivation layer. Nanotechnology, 31(9), 095202. https://doi.org/10.1088/1361-6528/ab5838
2019
19376884
TCJXIC7M
2019
1
apa
50
date
desc
1442
https://nano.khu.ac.kr/wp-content/plugins/zotpress/
%7B%22status%22%3A%22success%22%2C%22updateneeded%22%3Afalse%2C%22instance%22%3Afalse%2C%22meta%22%3A%7B%22request_last%22%3A0%2C%22request_next%22%3A0%2C%22used_cache%22%3Atrue%7D%2C%22data%22%3A%5B%7B%22key%22%3A%22LPTM9QMD%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Shin%20et%20al.%22%2C%22parsedDate%22%3A%222019-12-16%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BShin%2C%20D.%20H.%2C%20Shin%2C%20S.%20H.%2C%20Lee%2C%20S.%20G.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282019%29.%20High-Detectivity%5C%2F-Speed%20Flexible%20and%20Self-Powered%20Graphene%20Quantum%20Dots%5C%2FPerovskite%20Photodiodes.%20%26lt%3Bi%26gt%3BACS%20Sustainable%20Chemistry%20%26amp%3B%20Engineering%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B7%26lt%3B%5C%2Fi%26gt%3B%2824%29%2C%2019961%26%23x2013%3B19968.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1021%5C%2Facssuschemeng.9b05535%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1021%5C%2Facssuschemeng.9b05535%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22High-Detectivity%5C%2F-Speed%20Flexible%20and%20Self-Powered%20Graphene%20Quantum%20Dots%5C%2FPerovskite%20Photodiodes%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seung%20Hyun%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seung%20Gwan%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22For%20high-performance%20organic%5Cu2212inorganic%20halide%20perovskite%20photodiodes%20%28PDs%29%2C%20good%20quality%20of%20the%20active%20and%20charge-transport%20layers%20is%20highly%20required%20because%20the%20former%20is%20the%20primary%20source%20of%20photogenerated%20electron%5Cu2212hole%20pairs%20and%20the%20interface%20between%20the%20layers%20has%20a%20strong%20in%5Cufb02uence%20on%20the%20recombination%20of%20the%20carriers.%20Here%2C%20we%20%5Cufb01rst%20report%20perovskite%20PDs%20employing%20graphene%20quantum%20dots%20%28GQDs%29-mixed%20MAPbI3%5C%2Fhole-transport%20layer%20%28HTL%29%20and%20doped-graphene%20transparent%20conductive%20electrode.%20By%20adding%20the%20GQDs%20to%20the%20perovskite%20layer%20and%20HTL%2C%20the%20crystallinity%20of%20the%20perovskite%20layer%20is%20enhanced%20and%20the%20work%20function%20of%20HTL%20is%20increased%2C%20leading%20to%20e%5Cufb03cient%20generation%20of%20carriers%20in%20the%20active%20layer%20and%20reduced%20recombination%20at%20the%20active%20layer%5C%2FHTL%20interface.%20The%20resulting%20best%20detectivity%20and%20response%20time%20are%208.7%20%5Cu00d7%201012%5C%2F8.42%20%5Cu00d7%201012%20cm%20Hz1%5C%2F2%20W%5Cu22121%20and%200.96%5C%2F0.96%20%5Cu03bcs%20for%20rigid%5C%2F%5Cufb02exible%20PDs%2C%20respectively%2C%20at%200%20V%20bias%2C%20meaning%20%5Cu201cself-powered%5Cu201d%2C%20comparable%20to%20or%20even%20better%20than%20those%20of%20previously%20reported%20perovskite%20PDs.%20The%20%5Cufb02exible%20PDs%20also%20show%20excellent%20stability%20by%20maintaining%2080%25%20of%20the%20initial%20responsivity%20even%20after%20repeated%20bending%20for%201000%20cycles%20at%20a%20bending%20radius%20of%204%20mm.%20These%20results%20suggest%20that%20the%20addition%20of%20GQDs%20is%20very%20useful%20for%20enhancing%20the%20photosensing%20capability%20and%20%5Cufb02exibility%20of%20the%20perovskite%20PDs.%22%2C%22date%22%3A%222019-12-16%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1021%5C%2Facssuschemeng.9b05535%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fpubs.acs.org%5C%2Fdoi%5C%2F10.1021%5C%2Facssuschemeng.9b05535%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%222168-0485%2C%202168-0485%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A40%3A01Z%22%7D%7D%2C%7B%22key%22%3A%22IM8V2FXP%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222019-12-04%22%2C%22numChildren%22%3A2%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20Y.-J.%2C%20Perumalsamy%2C%20H.%2C%20Markus%2C%20J.%2C%20Balusamy%2C%20S.%20R.%2C%20Wang%2C%20C.%2C%20Ho%20Kang%2C%20S.%2C%20Lee%2C%20S.%2C%20Park%2C%20S.%20Y.%2C%20Kim%2C%20S.%2C%20Castro-Aceituno%2C%20V.%2C%20Kim%2C%20S.%20H.%2C%20%26amp%3B%20Yang%2C%20D.%20C.%20%282019%29.%20Development%20of%20%26lt%3Bi%26gt%3BLactobacillus%20kimchicus%26lt%3B%5C%2Fi%26gt%3B%20DCY51%26lt%3Bsup%26gt%3BT%26lt%3B%5C%2Fsup%26gt%3B%20-mediated%20gold%20nanoparticles%20for%20delivery%20of%20ginsenoside%20compound%20K%3A%20%26lt%3Bi%26gt%3Bin%20vitro%26lt%3B%5C%2Fi%26gt%3B%20photothermal%20effects%20and%20apoptosis%20detection%20in%20cancer%20cells.%20%26lt%3Bi%26gt%3BArtificial%20Cells%2C%20Nanomedicine%2C%20and%20Biotechnology%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B47%26lt%3B%5C%2Fi%26gt%3B%281%29%2C%2030%26%23x2013%3B44.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1080%5C%2F21691401.2018.1541900%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1080%5C%2F21691401.2018.1541900%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Development%20of%20%3Ci%3ELactobacillus%20kimchicus%3C%5C%2Fi%3E%20DCY51%3Csup%3ET%3C%5C%2Fsup%3E%20-mediated%20gold%20nanoparticles%20for%20delivery%20of%20ginsenoside%20compound%20K%3A%20%3Ci%3Ein%20vitro%3C%5C%2Fi%3E%20photothermal%20effects%20and%20apoptosis%20detection%20in%20cancer%20cells%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Yeon-Ju%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Haribalan%22%2C%22lastName%22%3A%22Perumalsamy%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Josua%22%2C%22lastName%22%3A%22Markus%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sri%20Renukadevi%22%2C%22lastName%22%3A%22Balusamy%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chao%22%2C%22lastName%22%3A%22Wang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seong%22%2C%22lastName%22%3A%22Ho%20Kang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seungah%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sang%20Yong%22%2C%22lastName%22%3A%22Park%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ver%5Cu00f3nica%22%2C%22lastName%22%3A%22Castro-Aceituno%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seung%20Hyun%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Deok%20Chun%22%2C%22lastName%22%3A%22Yang%22%7D%5D%2C%22abstractNote%22%3A%22We%20report%20a%20non-covalent%20loading%20of%20ginsenoside%20compound%20K%20%28CK%29%20onto%20our%20previously%20reported%20gold%20nanoparticles%20%28DCY51T-AuCKNps%29%20through%20one-pot%20biosynthesis%20using%20a%20probiotic%20Lactobacillus%20kimchicus%20DCY51T%20isolated%20from%20Korean%20kimchi.%20The%20ginsenoside-loaded%20gold%20nanoparticles%20were%20characterized%20by%20various%20analytical%20and%20spectroscopic%20techniques%20such%20as%20field%20emission%20transmission%20electron%20microscopy%20%28FE-TEM%29%2C%20energy-dispersive%20X-ray%20%28EDX%29%20spectroscopy%2C%20elemental%20mapping%2C%20X-ray%20powder%20diffraction%20%28XRD%29%2C%20selected%20area%20electron%20diffraction%20%28SAED%29%2C%20Fourier-transform%20infrared%20%28FTIR%29%20spectroscopy%20and%20dynamic%20light%20scattering%20%28DLS%29.%20Furthermore%2C%20drug%20loading%20was%20also%20determined%20by%20liquid%20chromatography%5Cu2013mass%20spectrometry%20%28LC%5Cu2013MS%29.%20In%20addition%2C%20DCY51T-AuNps%20and%20DCY51T-AuCKNps%20were%20resistant%20to%20aggregation%20caused%20by%20pH%20variation%20or%20a%20high%20ionic%20strength%20environment.%20Cell-based%20study%20confirmed%20that%20DCY51T-AuCKNps%20exhibited%20slightly%20higher%20cytotoxicity%20compared%20to%20ginsenoside%20CK%20treatment%20in%20A549%20cells%20%28human%20lung%20adenocarcinoma%20cell%20line%29%20and%20HT29%20%28human%20colorectal%20adenocarcinoma%20cell%20line%29.%20Upon%20laser%20treatment%2C%20DCY51T-AuCKNps%20showed%20enhanced%20cell%20apoptosis%20in%20A549%2C%20HT29%20and%20AGS%20cells%20%28human%20stomach%20gastric%20adenocarcinoma%20cell%20line%29%20compared%20with%20only%20DCY51T-AuCKNps%20treated%20cells.%20In%20conclusion%2C%20this%20preliminary%20study%20identified%20that%20DCY51T-AuCKNps%20act%20as%20a%20potent%20photothermal%20therapy%20agents%20with%20synergistic%20chemotherapeutic%20effects%20for%20the%20treatment%20of%20cancer.%22%2C%22date%22%3A%222019-12-04%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1080%5C%2F21691401.2018.1541900%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fwww.tandfonline.com%5C%2Fdoi%5C%2Ffull%5C%2F10.1080%5C%2F21691401.2018.1541900%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%222169-1401%2C%202169-141X%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A39%3A47Z%22%7D%7D%2C%7B%22key%22%3A%22QV34A87E%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222019-01-07%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20J.%20M.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282019%29.%20High-Performance%20%26lt%3Bi%26gt%3Bn-i-p-%26lt%3B%5C%2Fi%26gt%3B%20Type%20Perovskite%20Photodetectors%20Employing%20Graphene-Transparent%20Conductive%20Electrodes%20N-Type%20Doped%20with%20Amine%20Group%20Molecules.%20%26lt%3Bi%26gt%3BACS%20Sustainable%20Chemistry%20%26amp%3B%20Engineering%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B7%26lt%3B%5C%2Fi%26gt%3B%281%29%2C%20734%26%23x2013%3B739.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1021%5C%2Facssuschemeng.8b04322%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1021%5C%2Facssuschemeng.8b04322%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22High-Performance%20%3Ci%3En-i-p-%3C%5C%2Fi%3E%20Type%20Perovskite%20Photodetectors%20Employing%20Graphene-Transparent%20Conductive%20Electrodes%20N-Type%20Doped%20with%20Amine%20Group%20Molecules%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22We%20%5Cufb01rst%20report%20high-performance%20n-i-p-type%20perovskite%20photodetectors%20%28PDs%29%20by%20employing%20n-type%20graphene%20%28GR%29%20transparent%20conductive%20electrodes%20%28TCEs%29.%20The%20n-type%20GR%20is%20prepared%20by%20doping%20with%20ethylene%20diamine%2C%20diethylene%20triamine%2C%20and%20triethylene%20tetramine%20%28TETA%29%20containing%20two%2C%20three%2C%20and%20four%20amine%20groups%2C%20respectively.%20With%20increasing%20the%20number%20of%20amine%20groups%20%28An%29%20to%20four%2C%20the%20sheet%20resistance%20of%20the%20doped%20GR%20TCE%20is%20reduced%20to%20%5Cu223c205%20%5Cu03a9%5C%2F%20sq%20with%20only%20an%20%5Cu223c1%25%20decrease%20of%20the%20transmittance%20at%20550%20nm%20while%20the%20work%20function%20is%20gradually%20enhanced%20to%20%5Cu223c4.46%20eV%2C%20meaning%20n-type%20doping.%20The%20PDs%20optimized%20at%20An%20%3D%204%20exhibit%20106%20photocurrent%5C%2Fdark%20current%20ratio%2C%200.343%20AW%5Cu22121%20responsivity%20%28R%29%2C%205.82%20%5Cu00d7%20109%20cm%20Hz1%5C%2F2-W-1%20speci%5Cufb01c%20detectivity%2C%20108%20dB%20linear%20dynamic%20range%2C%20and%201.02%20%5Cu03bcs%20response%20time%2C%20comparable%20to%20the%20performances%20of%20the%20previously%20reported%20indium%20tin%20oxide-based%20perovskite%20PDs.%20In%20addition%2C%20%5Cufb02exible%20perovskite%20PDs%20with%20TFSA-doped%20GR%20TCEs%20show%20excellent%20bending%20stability%2C%20maintaining%20approximately%2070%25%20of%20the%20original%20R%20even%20after%20bending%20tests%20during%201000%20cycles%20at%20a%20bending%20curvature%20of%204%20mm.%22%2C%22date%22%3A%222019-01-07%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1021%5C%2Facssuschemeng.8b04322%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fpubs.acs.org%5C%2Fdoi%5C%2F10.1021%5C%2Facssuschemeng.8b04322%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%222168-0485%2C%202168-0485%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A39%3A52Z%22%7D%7D%2C%7B%22key%22%3A%22E6L6Q7NP%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Heo%20et%20al.%22%2C%22parsedDate%22%3A%222019%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BHeo%2C%20S.%2C%20Seo%2C%20G.%2C%20Cho%2C%20K.%20T.%2C%20Lee%2C%20Y.%2C%20Paek%2C%20S.%2C%20Kim%2C%20S.%2C%20Seol%2C%20M.%2C%20Kim%2C%20S.%20H.%2C%20Yun%2C%20D.%2C%20Kim%2C%20K.%2C%20Park%2C%20J.%2C%20Lee%2C%20J.%2C%20Lechner%2C%20L.%2C%20Rodgers%2C%20T.%2C%20Chung%2C%20J.%20W.%2C%20Kim%2C%20J.%2C%20Lee%2C%20D.%2C%20Choi%2C%20S.%2C%20%26amp%3B%20Nazeeruddin%2C%20M.%20K.%20%282019%29.%20Dimensionally%20Engineered%20Perovskite%20Heterostructure%20for%20Photovoltaic%20and%20Optoelectronic%20Applications.%20%26lt%3Bi%26gt%3BAdvanced%20Energy%20Materials%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B9%26lt%3B%5C%2Fi%26gt%3B%2845%29%2C%201902470.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1002%5C%2Faenm.201902470%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1002%5C%2Faenm.201902470%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Dimensionally%20Engineered%20Perovskite%20Heterostructure%20for%20Photovoltaic%20and%20Optoelectronic%20Applications%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Heo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Gabseok%22%2C%22lastName%22%3A%22Seo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Kyung%20Taek%22%2C%22lastName%22%3A%22Cho%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Yonghui%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sanghyun%22%2C%22lastName%22%3A%22Paek%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Minsu%22%2C%22lastName%22%3A%22Seol%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seong%20Heon%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%5Cu2010Jin%22%2C%22lastName%22%3A%22Yun%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Kihong%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jucheol%22%2C%22lastName%22%3A%22Park%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jaehan%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Lorenz%22%2C%22lastName%22%3A%22Lechner%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Thomas%22%2C%22lastName%22%3A%22Rodgers%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Won%22%2C%22lastName%22%3A%22Chung%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%5Cu2010Sik%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dongwook%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk%5Cu2010Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Mohammad%20Khaja%22%2C%22lastName%22%3A%22Nazeeruddin%22%7D%5D%2C%22abstractNote%22%3A%22Abstract%5Cn%20%20%20%20%20%20%20%20%20%20%20%20Although%202D%7C3D%20has%20shown%20potential%20for%20application%20in%20multifunctional%20devices%2C%20the%20principle%20of%20operation%20for%20multifunction%20devices%20%28SOLAR%20Cell%5Cu2010LED%3A%20SOLED%29%20has%20not%20yet%20been%20revealed.%20However%2C%20most%20studies%20have%20reported%20that%20the%20devices%20have%20only%20one%20auspicious%20characteristic.%20Here%20in%20this%20study%20the%20SOLED%20devices%20are%20monitored%20and%20investigated%20in%20a%202D%7C3D%20heterostructure%20with%20a%20multidimensional%20perovskite.%20It%20is%20fond%20that%20a%202D%7C3D%20heterostructure%20with%20a%20multidimensional%20perovskite%20interface%20induces%20carrier%20transmission%20from%20the%20interface%2C%20increasing%20the%20density%20of%20electrons%20and%20holes%2C%20and%20increasing%20their%20recombination.%20An%20interface%5Cu2010engineered%20perovskite%202D%7C3D%5Cu2010heterojunction%20structure%20is%20employed%20to%20realize%20the%20multifunctional%20photonic%20device%20in%20on%5Cu2010chip%2C%20exhibiting%20overall%20power%20conversion%20efficiencies%20of%20photovoltaics%20up%20to%2021.02%25%20under%20AM1.5%2C%20and%20external%20quantum%20efficiency%20of%20the%20light%5Cu2010emitting%20diode%20up%20to%205.13%25.%20This%20novel%20phenomenon%20is%20attributed%20to%20carrier%20transfer%20resulting%20in%20a%20high%20carrier%20density%20and%20enhanced%20carrier%20recombination%20at%20the%202D%7C3D%20interface.%22%2C%22date%22%3A%2212%5C%2F2019%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1002%5C%2Faenm.201902470%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fadvanced.onlinelibrary.wiley.com%5C%2Fdoi%5C%2F10.1002%5C%2Faenm.201902470%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%221614-6832%2C%201614-6840%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A39%3A59Z%22%7D%7D%2C%7B%22key%22%3A%22JKY34MYB%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222019%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20Y.-J.%2C%20Perumalsamy%2C%20H.%2C%20Castro-Aceituno%2C%20V.%2C%20Kim%2C%20D.%2C%20Markus%2C%20J.%2C%20Lee%2C%20S.%2C%20Kim%2C%20S.%2C%20Liu%2C%20Y.%2C%20%26amp%3B%20Yang%2C%20D.%20C.%20%282019%29.%20Photoluminescent%20And%20Self-Assembled%20Hyaluronic%20Acid-Zinc%20Oxide-Ginsenoside%20Rh2%20Nanoparticles%20And%20Their%20Potential%20Caspase-9%20Apoptotic%20Mechanism%20Towards%20Cancer%20Cell%20Lines.%20%26lt%3Bi%26gt%3BInternational%20Journal%20of%20Nanomedicine%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3BVolume%2014%26lt%3B%5C%2Fi%26gt%3B%2C%208195%26%23x2013%3B8208.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.2147%5C%2FIJN.S221328%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.2147%5C%2FIJN.S221328%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Photoluminescent%20And%20Self-Assembled%20Hyaluronic%20Acid-Zinc%20Oxide-Ginsenoside%20Rh2%20Nanoparticles%20And%20Their%20Potential%20Caspase-9%20Apoptotic%20Mechanism%20Towards%20Cancer%20Cell%20Lines%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Yeon-Ju%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Haribalan%22%2C%22lastName%22%3A%22Perumalsamy%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ver%5Cu00f3nica%22%2C%22lastName%22%3A%22Castro-Aceituno%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Donghyuk%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Josua%22%2C%22lastName%22%3A%22Markus%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seungah%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ying%22%2C%22lastName%22%3A%22Liu%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Deok%20Chun%22%2C%22lastName%22%3A%22Yang%22%7D%5D%2C%22abstractNote%22%3A%22Background%3A%20Zinc%20oxide%20nanoparticles%20%28ZnO%20NPs%29%20are%20used%20in%20modern%20cancer%20therapy%20based%20on%20their%20speci%5Cufb01c%20target%2C%20ef%5Cufb01cacy%2C%20low%20toxicity%20and%20biocompatibility.%20The%20photocatalytic%20performance%20of%20Zinc%20oxide%20%28ZnO%29%20nanocomposites%20with%20hyaluronic%20acid%20%28HA%29%20was%20used%20to%20study%20anticancer%20properties%20against%20various%20human%20cancer%20cell%20lines.%5CnMethods%3A%20Zinc%20oxide%20%28ZnO%29%20nanocomposites%20functionalized%20by%20hyaluronic%20acid%20%28HA%29%20were%20prepared%20by%20a%20co-precipitation%20method%20%28HA-ZnONcs%29.%20The%20submicron-%5Cufb02ower-shaped%20nanocomposites%20were%20further%20functionalized%20with%20ginsenoside%20Rh2%20by%20a%20cleavable%20ester%20bond%20via%20carbodiimide%20chemistry%20to%20form%20Rh2HAZnO.%20The%20physicochemical%20behaviors%20of%20the%20synthesized%20ZnO%20nanocomposites%20were%20characterized%20by%20various%20analytical%20and%20spectroscopic%20techniques.%20We%20carried%20out%203-%284%2C%205-dimethylthiazol-2-yl%29-2%2C%205-diphenyl%20tetrazolium%20bromide%20%28MTT%29%20assay%20to%20evaluate%20the%20toxicity%20of%20Rh2HAZnO%20in%20various%20human%20cancer%20cells%20%28A549%2C%20MCF-7%2C%20and%20HT29%29.%20Furthermore%2C%20to%20con%5Cufb01rm%20the%20apoptotic%20effects%20of%20Rh2HAZnO%20and%20to%20determine%20the%20role%20of%20the%20Caspase-9%5C%2Fp38%20MAPK%20pathways%20by%20various%20molecular%20techniques%20such%20as%20RT-PCR%20and%20Western%20blotting.%20Furthermore%2C%20Rh2HAZnO%20induced%20morphological%20changes%20of%20these%20cell%20lines%2C%20mainly%20intracellular%20reactive%20oxygen%20species%20%28ROS%29%20were%20observed%20by%20ROS%20staining%20and%20nucleus%20by%20Hoechst%20staining.%5CnResults%3A%20We%20con%5Cufb01rmed%20that%20Rh2HAZnO%20exhibits%20the%20anti-cancer%20effects%20on%20A549%20lung%20cancer%2C%20HT29%20colon%20cancer%2C%20and%20MCF7%20breast%20cancer%20cells.%20Moreover%2C%20intracellular%20reactive%20oxygen%20species%20%28ROS%29%20were%20observed%20in%20three%20cancer%20cell%20lines.%20Rh2HAZnO%20induced%20apoptotic%20process%20through%20p53-mediated%20pathway%20by%20upregulating%20p53%20and%20BAX%20and%20downregulating%20BCL2.%20Speci%5Cufb01cally%2C%20Rh2HAZnO%20induced%20activation%20of%20cleaved%20PARP%20%28Asp214%29%20in%20A549%20lung%20cancer%20cells%20and%20upregulated%20Caspase-9%5C%2Fphosphorylation%20of%20p38%20MAPK%20in%20other%20cell%20lines%20%28HT29%20and%20MCF-7%29.%20Furthermore%2C%20Rh2HAZnO%20induced%20morphological%20changes%20in%20the%20nucleus%20of%20these%20cell%20lines.%5CnConclusion%3A%20These%20results%20suggest%20that%20the%20potential%20anticancer%20activity%20of%20novel%20Rh2HAZnO%20nanoparticles%20might%20be%20linked%20to%20induction%20of%20apoptosis%20through%20the%20generation%20of%20ROS%20by%20activation%20of%20the%20Caspase-9%5C%2Fp38%20MAPK%20pathway.%22%2C%22date%22%3A%2210%5C%2F2019%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.2147%5C%2FIJN.S221328%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fwww.dovepress.com%5C%2Fphotoluminescent-and-self-assembled-hyaluronic-acid-zinc-oxide-ginseno-peer-reviewed-article-IJN%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%221178-2013%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A39%3A57Z%22%7D%7D%2C%7B%22key%22%3A%22PAZFZHNL%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222019%22%2C%22numChildren%22%3A2%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20D.%2C%20Lee%2C%20R.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Kim%2C%20T.%20%282019%29.%20Two-dimensional%20phase-engineered%201T%26%23x2032%3B%26%23x2013%3B%20and%202H%26%23x2013%3BMoTe2-based%20near-infrared%20photodetectors%20with%20ultra-fast%20response.%20%26lt%3Bi%26gt%3BJournal%20of%20Alloys%20and%20Compounds%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B789%26lt%3B%5C%2Fi%26gt%3B%2C%20960%26%23x2013%3B965.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.jallcom.2019.03.121%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.jallcom.2019.03.121%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Two-dimensional%20phase-engineered%201T%5Cu2032%5Cu2013%20and%202H%5Cu2013MoTe2-based%20near-infrared%20photodetectors%20with%20ultra-fast%20response%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22DongHwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Rochelle%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22TaeWan%22%2C%22lastName%22%3A%22Kim%22%7D%5D%2C%22abstractNote%22%3A%22Two-dimensional%20%282D%29%20crystal%20growth%20allows%20wafer-scale%20van%20der%20Waals%20epitaxial%20integration%20of%20transition%20metal%20dichalcogenides%20%28TMDs%29%20semiconductors%20onto%20a%20Si%20substrate.%202D%20MoTe2%20and%20WTe2%20among%20TMDs%20are%20considered%20as%20possible%20candidates%20for%20high-performance%20near-infrared%20photodetector%2C%20due%20to%20its%20relatively%20low%20band%20gap%20energy%20%280.8e1.1%20eV%29.%20Herein%2C%202D%20MoTe2%20was%20selected%20for%20the%20development%20of%20highperformance%20visibleenear-infrared%20%280.5e1.1%20mm%29%20photodetectors.%20Phase-engineered%20MoTe2%20%5Cufb01lms%20of%20four%20atomic%20layers%20were%20grown%20by%20metaleorganic%20chemical%20vapor%20deposition%20on%20an%208-inch%20SiO2%5C%2FSi%20substrate.%201T0%20and%202H%20phase%20MoTe2%20%5Cufb01lms%20were%20veri%5Cufb01ed%20by%20Raman%20spectra%20and%20scanning%20transmission%20electron%20microscopy.%20A%20fabricated%202H-MoTe2-based%20%5Cufb01eld-effect%20transistor%20%28FET%29%20was%20found%20to%20have%20p-type%20electrical%20transport%20with%20a%20mobility%20of%2022.8%20cm2%5C%2FV%24sdthe%20fastest%20among%20all%20currently%20reported%202H%20phase%20%5Cufb01lms%20synthesized%20by%20bottom-up%20methodsdand%20an%20on%5C%2Foff%20ratio%20of%201.3%20104.%20Moreover%2C%20a%20photodetector%20based%20on%20the%201T0%20phase%20%28semimetal%29%20%5Cufb01lm%20exhibited%20excellent%20performance%2C%20including%20photoresponsivity%20as%20high%20as%2062e109%20mA%5C%2FW%20at%20500e1000%20nmda%20900%25%20enhancement%20over%20that%20with%20a%202H%20phase%20%28p-type%20semiconductor%29%20%5Cufb01lmdand%20extremely%20fast%20response%20%28a%20rise%20time%20of%200.82%20ms%20and%20a%20fall%20time%20of%207.29%20ms%20at%20a%20wavelength%20of%201000%20nm%29.%22%2C%22date%22%3A%2206%5C%2F2019%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.jallcom.2019.03.121%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS0925838819309284%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2209258388%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A39%3A55Z%22%7D%7D%2C%7B%22key%22%3A%22FZCP7UDZ%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222019%22%2C%22numChildren%22%3A2%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20S.%2C%20Shin%2C%20S.%20H.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282019%29.%20N-i-p-type%20perovskite%20solar%20cells%20employing%20n-type%20graphene%20transparent%20conductive%20electrodes.%20%26lt%3Bi%26gt%3BJournal%20of%20Alloys%20and%20Compounds%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B786%26lt%3B%5C%2Fi%26gt%3B%2C%20614%26%23x2013%3B620.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.jallcom.2019.01.372%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.jallcom.2019.01.372%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22N-i-p-type%20perovskite%20solar%20cells%20employing%20n-type%20graphene%20transparent%20conductive%20electrodes%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seung%20Hyun%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Despite%20intensive%20studies%20on%20perovskite%20solar%20cells%20%28PSCs%29%20by%20employing%20graphene%20transparent%20conductive%20electrodes%20%28GR%20TCEs%29%2C%20no%20use%20of%20n-type%20GR%20as%20a%20TCE%20has%20been%20reported%20for%20PSCs.%20It%20is%20known%20to%20be%20technologically%20more%20easy%20to%20prepare%20p-type%20GR%20TCEs%20than%20n-type%20ones%20because%20even%20pristine%20GR%20usually%20exhibits%20p-type%20characteristics%20in%20air.%20P-type%20GR%20can%20be%20employed%20in%20p-i-n-type%20PSCs%20as%20a%20TCE%2C%20but%20not%20in%20ni-p-type%20ones.%20In%20addition%2C%20most%20of%20the%20p-i-n-type%20structures%20are%20not%20suitable%20for%20%5Cufb02exible%20substrates%20due%20to%20the%20inherent%20high-temperature%20annealing%20process.%20Here%2C%20n-type%20%28Ag%20nanowires-doped%29%20GR%20TCEs%20are%20%5Cufb01rst%20used%20for%20n-i-p%20CH3NH3PbI3%20%28MAPbI3%29%20PSCs.%20With%20increasing%20the%20doping%20concentration%20%28nA%29%20of%20Ag%20nanowires%20to%200.3%20wt%25%2C%20the%20sheet%20resistance%20%28Rs%29%20and%20transmittance%20%28T%29%20of%20the%20TCE%20monotonically%20decrease%20to%20~52%20U%5C%2Fsq%20and%20~90%25%2C%20respectively.%20Due%20to%20the%20nA-dependent%20trade-off%20relation%20between%20the%20Rs%20and%20the%20T%2C%20the%20DC%20conductivity%5C%2Foptical%20conductivity%20ratio%20is%20the%20largest%20%28~62%29%20at%20nA%20%5Cu00bc%200.1%20wt%25%2C%20resulting%20in%20maximum%20power%20conversion%20ef%5Cufb01ciencies%20%28PCEs%29%20of%2015.80%20and%2013.45%25%20for%20the%20PSCs%20on%20rigid%20and%20%5Cufb02exible%20substrates%2C%20respectively%2C%20indicating%20PCE%20enhancements%20more%20than%2050%20and%2030%25%20by%20using%20the%20n-type%20GR%20TCEs.%22%2C%22date%22%3A%2205%5C%2F2019%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.jallcom.2019.01.372%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS0925838819304074%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2209258388%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A39%3A50Z%22%7D%7D%5D%7D
Shin, D. H., Shin, S. H., Lee, S. G., Kim, S., & Choi, S.-H. (2019). High-Detectivity/-Speed Flexible and Self-Powered Graphene Quantum Dots/Perovskite Photodiodes. ACS Sustainable Chemistry & Engineering, 7(24), 19961–19968. https://doi.org/10.1021/acssuschemeng.9b05535
Kim, Y.-J., Perumalsamy, H., Markus, J., Balusamy, S. R., Wang, C., Ho Kang, S., Lee, S., Park, S. Y., Kim, S., Castro-Aceituno, V., Kim, S. H., & Yang, D. C. (2019). Development of Lactobacillus kimchicus DCY51T -mediated gold nanoparticles for delivery of ginsenoside compound K: in vitro photothermal effects and apoptosis detection in cancer cells. Artificial Cells, Nanomedicine, and Biotechnology, 47(1), 30–44. https://doi.org/10.1080/21691401.2018.1541900
Kim, J. M., Kim, S., & Choi, S.-H. (2019). High-Performance n-i-p- Type Perovskite Photodetectors Employing Graphene-Transparent Conductive Electrodes N-Type Doped with Amine Group Molecules. ACS Sustainable Chemistry & Engineering, 7(1), 734–739. https://doi.org/10.1021/acssuschemeng.8b04322
Heo, S., Seo, G., Cho, K. T., Lee, Y., Paek, S., Kim, S., Seol, M., Kim, S. H., Yun, D., Kim, K., Park, J., Lee, J., Lechner, L., Rodgers, T., Chung, J. W., Kim, J., Lee, D., Choi, S., & Nazeeruddin, M. K. (2019). Dimensionally Engineered Perovskite Heterostructure for Photovoltaic and Optoelectronic Applications. Advanced Energy Materials, 9(45), 1902470. https://doi.org/10.1002/aenm.201902470
Kim, Y.-J., Perumalsamy, H., Castro-Aceituno, V., Kim, D., Markus, J., Lee, S., Kim, S., Liu, Y., & Yang, D. C. (2019). Photoluminescent And Self-Assembled Hyaluronic Acid-Zinc Oxide-Ginsenoside Rh2 Nanoparticles And Their Potential Caspase-9 Apoptotic Mechanism Towards Cancer Cell Lines. International Journal of Nanomedicine, Volume 14, 8195–8208. https://doi.org/10.2147/IJN.S221328
Kim, D., Lee, R., Kim, S., & Kim, T. (2019). Two-dimensional phase-engineered 1T′– and 2H–MoTe2-based near-infrared photodetectors with ultra-fast response. Journal of Alloys and Compounds, 789, 960–965. https://doi.org/10.1016/j.jallcom.2019.03.121
Kim, S., Shin, S. H., & Choi, S.-H. (2019). N-i-p-type perovskite solar cells employing n-type graphene transparent conductive electrodes. Journal of Alloys and Compounds, 786, 614–620. https://doi.org/10.1016/j.jallcom.2019.01.372
2018
19376884
TCJXIC7M
2018
1
apa
50
date
desc
1442
https://nano.khu.ac.kr/wp-content/plugins/zotpress/
%7B%22status%22%3A%22success%22%2C%22updateneeded%22%3Afalse%2C%22instance%22%3Afalse%2C%22meta%22%3A%7B%22request_last%22%3A0%2C%22request_next%22%3A0%2C%22used_cache%22%3Atrue%7D%2C%22data%22%3A%5B%7B%22key%22%3A%22G2BLCQCI%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Shin%20et%20al.%22%2C%22parsedDate%22%3A%222018-03-28%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BShin%2C%20D.%20H.%2C%20Kim%2C%20J.%20M.%2C%20Jang%2C%20C.%20W.%2C%20Kim%2C%20J.%20H.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282018%29.%20Effect%20of%20layer%20number%20and%20metal-chloride%20dopant%20on%20multiple%20layers%20of%20graphene%5C%2Fporous%20Si%20solar%20cells.%20%26lt%3Bi%26gt%3BJournal%20of%20Applied%20Physics%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B123%26lt%3B%5C%2Fi%26gt%3B%2812%29%2C%20123101.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.5013169%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.5013169%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Effect%20of%20layer%20number%20and%20metal-chloride%20dopant%20on%20multiple%20layers%20of%20graphene%5C%2Fporous%20Si%20solar%20cells%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Porous%20silicon%20%28PSi%29%20is%20an%20attractive%20building%20block%20for%20Si-based%20solar%20cells%20due%20to%20its%20low%20reflectance.%20Here%2C%20PSi%20is%20prepared%20by%20metal-assisted%20chemical%20etching%20of%20a%20Si%20wafer%20on%20which%20Au%20nanoparticles%20are%20formed%20by%20sputtering%20for%205%20s.%20The%20layer%20number%20%28Ln%29%20of%20graphene%20is%20varied%20to%20optimize%20multiple%20layers%20of%20graphene%5C%2FPSi%20Schottky%20junction%20solar%20cells%20because%20the%20sheet%20resistance%2C%20work%20function%2C%20transmittance%2C%20and%20reflectance%20of%20graphene%20strongly%20depend%20on%20Ln.%20At%20Ln%5Cu2009%3D%5Cu20092%2C%20the%20best%20condition%20for%20the%20highest%20power%20conversion%20efficiency%20%28PCE%29%2C%20various%20metal%20chlorides%20are%20employed%20as%20dopants%20for%20graphene.%20The%20PCE%20is%20maximally%20enhanced%20to%209.15%25%20by%20doping%20the%20graphene%20with%20RhCl3%20and%20is%20reduced%20by%20only%2020%25%20of%20its%20original%20value%20%28absolutely%20from%209.15%25%20to%207.23%25%29%20during%2010%5Cu2009days%20in%20air.%20These%20results%20are%20very%20meaningful%20in%20that%20even%20a%20single%20doping%20for%20graphene%20can%20be%20effective%20for%20achieving%20high%20PCE%20from%20graphene%5C%2FPSi%20solar%20cells%20by%20controlling%20Ln.%22%2C%22date%22%3A%222018-03-28%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1063%5C%2F1.5013169%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fpubs.aip.org%5C%2Fjap%5C%2Farticle%5C%2F123%5C%2F12%5C%2F123101%5C%2F155175%5C%2FEffect-of-layer-number-and-metal-chloride-dopant%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220021-8979%2C%201089-7550%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A39%3A18Z%22%7D%7D%2C%7B%22key%22%3A%22XYYTR9LF%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222018-02-02%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20J.%20M.%2C%20Kim%2C%20S.%2C%20Hwang%2C%20S.%20W.%2C%20Kim%2C%20C.%20O.%2C%20Shin%2C%20D.%20H.%2C%20Kim%2C%20J.%20H.%2C%20Jang%2C%20C.%20W.%2C%20Kang%2C%20S.%20S.%2C%20Hwang%2C%20E.%2C%20Choi%2C%20S.-H.%2C%20El-Gohary%2C%20S.%20H.%2C%20%26amp%3B%20Byun%2C%20K.%20M.%20%282018%29.%20Strong%20enhancement%20of%20emission%20efficiency%20in%20GaN%20light-emitting%20diodes%20by%20plasmon-coupled%20light%20amplification%20of%20graphene.%20%26lt%3Bi%26gt%3BNanotechnology%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B29%26lt%3B%5C%2Fi%26gt%3B%285%29%2C%20055201.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F1361-6528%5C%2Faaa067%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F1361-6528%5C%2Faaa067%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Strong%20enhancement%20of%20emission%20efficiency%20in%20GaN%20light-emitting%20diodes%20by%20plasmon-coupled%20light%20amplification%20of%20graphene%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%20Won%22%2C%22lastName%22%3A%22Hwang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chang%20Oh%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soo%20Seok%22%2C%22lastName%22%3A%22Kang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Euyheon%22%2C%22lastName%22%3A%22Hwang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sherif%20H%22%2C%22lastName%22%3A%22El-Gohary%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Kyung%20Min%22%2C%22lastName%22%3A%22Byun%22%7D%5D%2C%22abstractNote%22%3A%22Recently%2C%20we%20have%20demonstrated%20that%20excitation%20of%20plasmon-polaritons%20in%20a%20mechanically-derived%20graphene%20sheet%20on%20the%20top%20of%20a%20ZnO%20semiconductor%20considerably%20enhances%20its%20light%20emission%20ef%5Cufb01ciency.%20If%20this%20scheme%20is%20also%20applied%20to%20device%20structures%2C%20it%20is%20then%20expected%20that%20the%20energy%20ef%5Cufb01ciency%20of%20light-emitting%20diodes%20%28LEDs%29%20increases%20substantially%20and%20the%20commercial%20potential%20will%20be%20enormous.%20Here%2C%20we%20report%20that%20the%20plasmon-induced%20light%20coupling%20ampli%5Cufb01es%20emitted%20light%20by%20%5Cu223c1.6%20times%20in%20doped%20large-area%20chemical-vapor-deposition-grown%20graphene%2C%20which%20is%20useful%20for%20practical%20applications.%20This%20coupling%20behavior%20also%20appears%20in%20GaN-based%20LEDs.%20With%20AuCl3-doped%20graphene%20on%20Ga-doped%20ZnO%20%5Cufb01lms%20that%20is%20used%20as%20transparent%20conducting%20electrodes%20for%20the%20LEDs%2C%20the%20average%20electroluminescence%20intensity%20is%201.2%5Cu20131.7%20times%20enhanced%20depending%20on%20the%20injection%20current.%20The%20chemical%20doping%20of%20graphene%20may%20produce%20the%20inhomogeneity%20in%20charge%20densities%20%28i.e.%2C%20electron%5C%2Fhole%20puddles%29%20or%20roughness%2C%20which%20can%20play%20a%20role%20as%20grating%20couplers%2C%20resulting%20in%20such%20strong%20plasmon-enhanced%20light%20ampli%5Cufb01cation.%20Based%20on%20theoretical%20calculations%2C%20the%20plasmon-coupled%20behavior%20is%20rigorously%20explained%20and%20a%20method%20of%20controlling%20its%20resonance%20condition%20is%20proposed.%22%2C%22date%22%3A%222018-02-02%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1088%5C%2F1361-6528%5C%2Faaa067%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fiopscience.iop.org%5C%2Farticle%5C%2F10.1088%5C%2F1361-6528%5C%2Faaa067%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220957-4484%2C%201361-6528%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A39%3A14Z%22%7D%7D%2C%7B%22key%22%3A%22YH5UYU56%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222018%22%2C%22numChildren%22%3A4%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20J.%20M.%2C%20Jang%2C%20C.%20W.%2C%20Kim%2C%20J.%20H.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282018%29.%20Use%20of%20AuCl3-doped%20graphene%20as%20a%20protecting%20layer%20for%20enhancing%20the%20stabilities%20of%20inverted%20perovskite%20solar%20cells.%20%26lt%3Bi%26gt%3BApplied%20Surface%20Science%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B455%26lt%3B%5C%2Fi%26gt%3B%2C%201131%26%23x2013%3B1136.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.apsusc.2018.06.068%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.apsusc.2018.06.068%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Use%20of%20AuCl3-doped%20graphene%20as%20a%20protecting%20layer%20for%20enhancing%20the%20stabilities%20of%20inverted%20perovskite%20solar%20cells%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Relatively-low%20long-term%20stabilities%20of%20perovskite%20solar%20cells%20%28PSCs%29%20despite%20the%20excellent%20photovoltaic%20properties%20are%20a%20critical%20obstacle%20to%20their%20practical%20applications.%20A%20stack%20of%20poly%283%2C4-ethyle%20nedioxy%20thiophene%29%3Apoly%28styrenesulfonate%29%20%28PEDOT%3APSS%29%5C%2Findium%20tin%20oxide%20%28ITO%29%20is%20widely%20used%20as%20a%20key%20element%20in%20p-i-n%20perovskite%20PSC%20structures%2C%20but%20is%20also%20one%20of%20the%20major%20sources%20for%20degrading%20the%20performance%20of%20the%20PSCs%2C%20mostly%20resulting%20from%20the%20high%20acidity%20of%20PEDOT%3APSS.%20Here%2C%20we%20%5Cufb01rst%20employ%20gold%28III%29%20chloride%20%28AuCl3%29-doped%20graphene%20%28GR%29%20as%20a%20protecting%20layer%20between%20PEDOT%3APSS%20and%20ITO%20for%20improving%20the%20e%5Cufb03ciency%20and%20durability%20of%20the%20PSCs.%20The%20AuCl3GR%20PSC%20shows%20maximum%20power%20conversion%20e%5Cufb03ciencies%20%28PCEs%29%20of%2015.77%5C%2F15.90%25%20for%20forward%5C%2Freverse%20condition%20at%20a%20AuCl3%20concentration%20of%2010%20mM%2C%20much%20larger%20than%20those%20%2814.16%5C%2F14.21%25%29%20of%20the%20PSC%20without%20GR.%20After%2030%20days%20under%20ambient%20condition%2C%20the%20former%20PSC%20retains%2067%25%20of%20its%20original%20PCE%20with%20the%20operation%20of%20the%20latter%20PSC%20being%20stopped.%20The%20enhancement%20of%20the%20PCE%20and%20the%20stability%20result%20from%20the%20improvement%20in%20the%20protection%20of%20ITO%20as%20well%20as%20in%20the%20collection%20of%20holes%20by%20the%20inclusion%20of%20the%20AuCl3-GR.%22%2C%22date%22%3A%2210%5C%2F2018%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.apsusc.2018.06.068%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS0169433218316350%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2201694332%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A39%3A23Z%22%7D%7D%2C%7B%22key%22%3A%22FQ6HLVNG%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222018%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20S.%2C%20Lee%2C%20H.%20S.%2C%20Kim%2C%20J.%20M.%2C%20Seo%2C%20S.%20W.%2C%20Kim%2C%20J.%20H.%2C%20Jang%2C%20C.%20W.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282018%29.%20Effect%20of%20layer%20number%20on%20flexible%20perovskite%20solar%20cells%20employing%20multiple%20layers%20of%20graphene%20as%20transparent%20conductive%20electrodes.%20%26lt%3Bi%26gt%3BJournal%20of%20Alloys%20and%20Compounds%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B744%26lt%3B%5C%2Fi%26gt%3B%2C%20404%26%23x2013%3B411.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.jallcom.2018.02.136%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.jallcom.2018.02.136%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Effect%20of%20layer%20number%20on%20flexible%20perovskite%20solar%20cells%20employing%20multiple%20layers%20of%20graphene%20as%20transparent%20conductive%20electrodes%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ha%20Seung%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sang%20Woo%22%2C%22lastName%22%3A%22Seo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Recently%2C%20excellent%20performance%20of%20perovskite%20solar%20cells%20has%20led%20to%20increasing%20interest%20in%20their%20%5Cufb02exible%5C%2F%20portable%20power%20applications.%20Providing%20reliable%20%5Cufb02exible%20transparent%20conductive%20electrodes%20%28TCEs%29%20is%20believed%20to%20be%20crucial%20for%20maximizing%20the%20performance%20of%20%5Cufb02exible%20perovskite%20solar%20cells.%20Here%2C%20we%20%5Cufb01rst%20report%20ef%5Cufb01cient%20and%20reliable%20ultra-%5Cufb02exible%20p-i-n-type%20CH3NH3PbI3%20perovskite%20solar%20cells%20employing%20multiple%20layers%20of%20graphene%20as%20anode%20TCEs.%20Through%20the%20variation%20of%20the%20layer%20number%20%28Ln%29%20of%20graphene%20TCEs%2C%20the%20solar%20cells%20are%20shown%20to%20be%20optimized%20at%20Ln%20%5Cu00bc%202%2C%20where%20the%20power-conversion%20ef%5Cufb01ciency%20%28PCE%29%20exhibits%2013.35%20and%2013.94%25%20for%20forward%20and%20reverse%20scans%2C%20respectively%20with%20almost%20no%20hysteresis%20in%20the%20current%20density-voltage%20curves.%20These%20results%20originate%20from%20the%20Lnedependent%20trade-off%20correlation%20between%20the%20structural%2C%20optical%2C%20and%20electrical%20properties%20of%20the%20solar%20cells%2C%20resulting%20in%20largest%20external%20quantum%20ef%5Cufb01ciency%20at%20Ln%20%5Cu00bc%202.%20The%20PCE%20is%20maintained%20at%20~90%25%20of%20its%20original%20value%20after%201000%20bending%20cycles%20even%20at%20a%20bending%20radius%20of%202%20mm%2C%20overwhelming%20bending%20stability%20against%20the%20bending%20deformation.%22%2C%22date%22%3A%2205%5C%2F2018%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.jallcom.2018.02.136%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS0925838818305814%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2209258388%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A39%3A21Z%22%7D%7D%2C%7B%22key%22%3A%22EJF3FGDG%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Shin%20et%20al.%22%2C%22parsedDate%22%3A%222018%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BShin%2C%20D.%20H.%2C%20Jang%2C%20C.%20W.%2C%20Lee%2C%20H.%20S.%2C%20Seo%2C%20S.%20W.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282018%29.%20Graphene%5C%2FSi%20solar%20cells%20employing%20triethylenetetramine%20dopant%20and%20polymethylmethacrylate%20antireflection%20layer.%20%26lt%3Bi%26gt%3BApplied%20Surface%20Science%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B433%26lt%3B%5C%2Fi%26gt%3B%2C%20181%26%23x2013%3B187.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.apsusc.2017.09.231%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.apsusc.2017.09.231%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Graphene%5C%2FSi%20solar%20cells%20employing%20triethylenetetramine%20dopant%20and%20polymethylmethacrylate%20antireflection%20layer%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ha%20Seung%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sang%20Woo%22%2C%22lastName%22%3A%22Seo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22We%20report%20the%20use%20of%20triethylenetetramine%20%28TETA%29%20as%20a%20dopant%20of%20graphene%20transparent%20conducting%20electrodes%20%28TCEs%29%20for%20Si%20heterojunction%20solar%20cells.%20The%20molar%20concentration%20%28nD%29%20of%20TETA%20is%20varied%20from%200.05%20to%200.3%20mM%20to%20optimize%20the%20graphene%20TCEs.%20The%20TETA-doped%20graphene%5C%2FSi%20Schottky%20solar%20cells%20show%20a%20maximum%20power-conversion%20ef%5Cufb01ciency%20%28PCE%29%20of%204.32%25%20at%20nD%20%3D%200.2%20mM%2C%20resulting%20from%20the%20enhanced%20electrical%20and%20optical%20properties%2C%20as%20proved%20from%20the%20nD-dependent%20behaviors%20of%20sheet%20resistance%2C%20transmittance%2C%20re%5Cufb02ectance%2C%20series%20resistance%2C%20and%20external%20quantum%20ef%5Cufb01ciency.%20In%20addition%2C%20polymethylmethacrylate%20is%20employed%20as%20an%20antire%5Cufb02ection%20layer%20to%20enhance%20the%20light-trapping%20effect%20on%20graphene%5C%2FSi%20solar%20cells%2C%20resulting%20in%20further%20enhancement%20of%20the%20maximum%20PCE%20from%204.32%20to%205.48%25.%20The%20loss%20of%20the%20PCE%20is%20only%20within%202%25%20of%20its%20original%20value%20during%2010%20days%20in%20air.%22%2C%22date%22%3A%2203%5C%2F2018%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.apsusc.2017.09.231%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS0169433217328799%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2201694332%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A39%3A16Z%22%7D%7D%2C%7B%22key%22%3A%22EYEMEFRW%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222018%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20J.%20M.%2C%20Kim%2C%20S.%2C%20Shin%2C%20D.%20H.%2C%20Seo%2C%20S.%20W.%2C%20Lee%2C%20H.%20S.%2C%20Kim%2C%20J.%20H.%2C%20Jang%2C%20C.%20W.%2C%20Kang%2C%20S.%20S.%2C%20Choi%2C%20S.-H.%2C%20Kwak%2C%20G.%20Y.%2C%20Kim%2C%20K.%20J.%2C%20Lee%2C%20H.%2C%20%26amp%3B%20Lee%2C%20H.%20%282018%29.%20Si-quantum-dot%20heterojunction%20solar%20cells%20with%2016.2%25%20efficiency%20achieved%20by%20employing%20doped-graphene%20transparent%20conductive%20electrodes.%20%26lt%3Bi%26gt%3BNano%20Energy%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B43%26lt%3B%5C%2Fi%26gt%3B%2C%20124%26%23x2013%3B129.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.nanoen.2017.11.017%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.nanoen.2017.11.017%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Si-quantum-dot%20heterojunction%20solar%20cells%20with%2016.2%25%20efficiency%20achieved%20by%20employing%20doped-graphene%20transparent%20conductive%20electrodes%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sang%20Woo%22%2C%22lastName%22%3A%22Seo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ha%20Seung%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soo%20Seok%22%2C%22lastName%22%3A%22Kang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Gyea%20Young%22%2C%22lastName%22%3A%22Kwak%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Kyung%20Joong%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Hanleem%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Hyoyoung%22%2C%22lastName%22%3A%22Lee%22%7D%5D%2C%22abstractNote%22%3A%22To%20overcome%20small-%20and%20indirect-bandgap%20nature%20of%20crystalline%20bulk%20Si%2C%20a%20lot%20of%20e%5Cufb00orts%20have%20been%20made%20to%20utilize%20Si%20quantum%20dots%20%28SQDs%29%20in%20optoelectronic%20devices.%20By%20controlling%20the%20size%20of%20Si%20quantum%20dots%20%28SQDs%29%2C%20it%20is%20possible%20to%20vary%20the%20energy%20bandgap%20based%20on%20quantum%20con%5Cufb01nement%20e%5Cufb00ect%2C%20which%20can%20maximize%20the%20powerconversion%20e%5Cufb03ciency%20%28PCE%29%20of%20solar%20cells%20due%20to%20the%20energy%20harvesting%20in%20a%20broader%20spectral%20range.%20Here%2C%20we%20%5Cufb01rst%20employ%20graphene%20transparent%20conductive%20electrodes%20%28TCEs%29%20for%20SQDs-based%20solar%20cells%2C%20showing%20a%20maximum%20PCE%20of%2016.2%25%2C%20much%20larger%20than%20ever%20achieved%20in%20bulk-Si%20solar%20cells%20with%20graphene%20TCEs.%20In%20this%20work%2C%20the%20graphene%20TCEs%20are%20doped%20with%20two%20kinds%20of%20materials%20such%20as%20AuCl3%20and%20Ag%20nanowires%20for%20e%5Cufb03cient%20collection%20of%20the%20carriers%20photo-induced%20in%20SQDs.%20The%20encapsulation%20of%20the%20doped-graphene%20TCE%20with%20another%20graphene%20layer%20prevents%20the%20doping%20elements%20from%20being%20desorbed%20or%20oxidized%2C%20thereby%20making%20the%20PCE%20higher%2C%20its%20doping%20dependence%20more%20evident%2C%20and%20the%20long-term%20performance%20more%20stable.%20The%20observed%20unique%20solar%20cell%20characteristics%20prove%20to%20be%20dominated%20by%20the%20trade-o%5Cufb00%20e%5Cufb00ects%20between%20doping-induced%20variations%20of%20diode%20quality%2C%20transmittance%5C%2Fsheet%20resistance%20of%20graphene%2C%20energy%20barrier%20at%20the%20graphene%20TCE%5C%2FSQDs%20interface%2C%20and%20re%5Cufb02ectance.%22%2C%22date%22%3A%2201%5C%2F2018%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.nanoen.2017.11.017%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS2211285517306961%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2222112855%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A39%3A12Z%22%7D%7D%5D%7D
Shin, D. H., Kim, J. M., Jang, C. W., Kim, J. H., Kim, S., & Choi, S.-H. (2018). Effect of layer number and metal-chloride dopant on multiple layers of graphene/porous Si solar cells. Journal of Applied Physics, 123(12), 123101. https://doi.org/10.1063/1.5013169
Kim, J. M., Kim, S., Hwang, S. W., Kim, C. O., Shin, D. H., Kim, J. H., Jang, C. W., Kang, S. S., Hwang, E., Choi, S.-H., El-Gohary, S. H., & Byun, K. M. (2018). Strong enhancement of emission efficiency in GaN light-emitting diodes by plasmon-coupled light amplification of graphene. Nanotechnology, 29(5), 055201. https://doi.org/10.1088/1361-6528/aaa067
Kim, J. M., Jang, C. W., Kim, J. H., Kim, S., & Choi, S.-H. (2018). Use of AuCl3-doped graphene as a protecting layer for enhancing the stabilities of inverted perovskite solar cells. Applied Surface Science, 455, 1131–1136. https://doi.org/10.1016/j.apsusc.2018.06.068
Kim, S., Lee, H. S., Kim, J. M., Seo, S. W., Kim, J. H., Jang, C. W., & Choi, S.-H. (2018). Effect of layer number on flexible perovskite solar cells employing multiple layers of graphene as transparent conductive electrodes. Journal of Alloys and Compounds, 744, 404–411. https://doi.org/10.1016/j.jallcom.2018.02.136
Shin, D. H., Jang, C. W., Lee, H. S., Seo, S. W., Kim, S., & Choi, S.-H. (2018). Graphene/Si solar cells employing triethylenetetramine dopant and polymethylmethacrylate antireflection layer. Applied Surface Science, 433, 181–187. https://doi.org/10.1016/j.apsusc.2017.09.231
Kim, J. M., Kim, S., Shin, D. H., Seo, S. W., Lee, H. S., Kim, J. H., Jang, C. W., Kang, S. S., Choi, S.-H., Kwak, G. Y., Kim, K. J., Lee, H., & Lee, H. (2018). Si-quantum-dot heterojunction solar cells with 16.2% efficiency achieved by employing doped-graphene transparent conductive electrodes. Nano Energy, 43, 124–129. https://doi.org/10.1016/j.nanoen.2017.11.017
2017
19376884
TCJXIC7M
2017
1
apa
50
date
desc
1442
https://nano.khu.ac.kr/wp-content/plugins/zotpress/
%7B%22status%22%3A%22success%22%2C%22updateneeded%22%3Afalse%2C%22instance%22%3Afalse%2C%22meta%22%3A%7B%22request_last%22%3A0%2C%22request_next%22%3A0%2C%22used_cache%22%3Atrue%7D%2C%22data%22%3A%5B%7B%22key%22%3A%22F46U58TZ%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Seo%20et%20al.%22%2C%22parsedDate%22%3A%222017-10-20%22%2C%22numChildren%22%3A2%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BSeo%2C%20S.%20W.%2C%20Lee%2C%20H.%20S.%2C%20Shin%2C%20D.%20H.%2C%20Kim%2C%20J.%20H.%2C%20Jang%2C%20C.%20W.%2C%20Kim%2C%20J.%20M.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282017%29.%20Highly-stable%20and%20-flexible%20graphene%5C%2F%28CF%26lt%3Bsub%26gt%3B3%26lt%3B%5C%2Fsub%26gt%3B%20SO%26lt%3Bsub%26gt%3B2%26lt%3B%5C%2Fsub%26gt%3B%20%29%26lt%3Bsub%26gt%3B2%26lt%3B%5C%2Fsub%26gt%3B%20NH%5C%2Fgraphene%20transparent%20conductive%20electrodes%20for%20organic%20solar%20cells.%20%26lt%3Bi%26gt%3BNanotechnology%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B28%26lt%3B%5C%2Fi%26gt%3B%2842%29%2C%20425203.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F1361-6528%5C%2Faa8533%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F1361-6528%5C%2Faa8533%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Highly-stable%20and%20-flexible%20graphene%5C%2F%28CF%3Csub%3E3%3C%5C%2Fsub%3E%20SO%3Csub%3E2%3C%5C%2Fsub%3E%20%29%3Csub%3E2%3C%5C%2Fsub%3E%20NH%5C%2Fgraphene%20transparent%20conductive%20electrodes%20for%20organic%20solar%20cells%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sang%20Woo%22%2C%22lastName%22%3A%22Seo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ha%20Seung%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22We%20%5Cufb01rst%20employ%20highly-stable%20and%20-%5Cufb02exible%20%28CF3SO2%292NH-doped%20graphene%20%28TFSA%5C%2FGR%29%20and%20GRencapsulated%20TFSA%5C%2FGR%20%28GR%5C%2FTFSA%5C%2FGR%29%20transparent%20conductive%20electrodes%20%28TCEs%29%20prepared%20on%20polyethylene%20terephthalate%20substrates%20for%20%5Cufb02exible%20organic%20solar%20cells%20%28OSCs%29.%20Compared%20to%20conventional%20indium%20tin%20oxide%20%28ITO%29%20TCEs%2C%20the%20TFSA-doped-GR%20TCEs%20show%20higher%20optical%20transmittance%20and%20larger%20sheet%20resistance.%20The%20TFSA%5C%2FGR%20and%20GR%5C%2FTFSA%5C%2FGR%20TCEs%20show%20work%20functions%20of%204.89%5Cuf0a0%5Cu00b1%5Cuf0a00.16%20and%204.97%5Cuf0a0%5Cu00b1%5Cuf0a00.18%20eV%2C%20respectively%2C%20which%20are%20not%20only%20larger%20than%20those%20of%20the%20ITO%20TCEs%20but%20also%20indicate%20p-type%20doping%20of%20GR%2C%20and%20are%20therefore%20more%20suitable%20for%20anode%20TCEs%20of%20OSCs.%20In%20addition%2C%20typical%20GR%5C%2FTFSA%5C%2FGR-TCE%20OSCs%20are%20much%20more%20mechanically%20%5Cufb02exible%20than%20the%20ITO-TCE%20ones%20with%20their%20photovoltaic%20parameters%20being%20similar%2C%20as%20proved%20by%20bending%20tests%20as%20functions%20of%20cycle%20and%20curvature.%22%2C%22date%22%3A%222017-10-20%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1088%5C%2F1361-6528%5C%2Faa8533%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fiopscience.iop.org%5C%2Farticle%5C%2F10.1088%5C%2F1361-6528%5C%2Faa8533%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220957-4484%2C%201361-6528%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A38%3A48Z%22%7D%7D%2C%7B%22key%22%3A%22NV2DAQNN%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Lee%20et%20al.%22%2C%22parsedDate%22%3A%222017-01-20%22%2C%22numChildren%22%3A3%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BLee%2C%20S.%20H.%2C%20Kwak%2C%20G.%20Y.%2C%20Hong%2C%20S.%2C%20Kim%2C%20C.%2C%20Kim%2C%20S.%2C%20Kim%2C%20A.%2C%20%26amp%3B%20Kim%2C%20K.%20J.%20%282017%29.%20Ultraviolet%20responses%20of%20a%20heterojunction%20Si%20quantum%20dot%20solar%20cell.%20%26lt%3Bi%26gt%3BNanotechnology%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B28%26lt%3B%5C%2Fi%26gt%3B%283%29%2C%20035402.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F1361-6528%5C%2F28%5C%2F3%5C%2F035402%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F1361-6528%5C%2F28%5C%2F3%5C%2F035402%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Ultraviolet%20responses%20of%20a%20heterojunction%20Si%20quantum%20dot%20solar%20cell%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seong%20Hyun%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Gyea%20Young%22%2C%22lastName%22%3A%22Kwak%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Songwoung%22%2C%22lastName%22%3A%22Hong%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chanhong%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ansoon%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Kyung%20Joong%22%2C%22lastName%22%3A%22Kim%22%7D%5D%2C%22abstractNote%22%3A%22We%20investigated%20the%20ultraviolet%20%28UV%29%20responses%20of%20a%20heterojunction%20Si%20quantum%20dot%20%28QD%29%20solar%20cell%20consisting%20of%20p-type%20Si-QDs%20fabricated%20on%20a%20n-type%20crystalline%20Si%20%28p-Si-QD%5C%2Fn-c-Si%20HJSC%29.%20The%20UV%20responses%20were%20compared%20with%20a%20conventional%20n-type%20crystalline%20Si%20solar%20cell%20%28n-c-Si%20SC%29.%20The%20external%20and%20internal%20quantum%20ef%5Cufb01ciency%20results%20of%20the%20p-Si-QD%5C%2Fn-c-Si%20HJSC%20exhibited%20a%20clear%20enhancement%20in%20the%20UV%20responses%20%28300%5Cu2013400%20nm%29%2C%20which%20was%20not%20observed%20in%20the%20n-c-Si%20SC.%20Based%20on%20the%20results%20of%20the%20cell%20re%5Cufb02ectance%20and%20bias-dependent%20responses%2C%20we%20expect%20that%20almost%20all%20UV%20responses%20occur%20in%20the%20p-Si-QD%20layer%2C%20and%20the%20generated%20carriers%20can%20be%20transported%20via%20the%20Si-QD%20layer%20due%20to%20the%20formation%20of%20a%20suf%5Cufb01cient%20electric%20%5Cufb01led.%20As%20a%20result%2C%20a%20high%20power%20conversion%20ef%5Cufb01ciency%20of%2014.5%25%20was%20achieved%20from%20the%20p-Si-QD%5C%2Fn-c-Si%20HJSC.%20By%20reducing%20the%20thickness%20of%20the%20n-Si%20substrate%20from%20650%20%5Cu03bcm%20to%20300%20%5Cu03bcm%2C%20more%20enhanced%20power%20conversion%20ef%5Cufb01ciency%20of%2014.8%25%20was%20obtained%20which%20is%20the%20highest%20value%20among%20the%20reported%20Si-QD%20based%20solar%20cells%20to%20date.%22%2C%22date%22%3A%222017-01-20%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1088%5C%2F1361-6528%5C%2F28%5C%2F3%5C%2F035402%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fiopscience.iop.org%5C%2Farticle%5C%2F10.1088%5C%2F1361-6528%5C%2F28%5C%2F3%5C%2F035402%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220957-4484%2C%201361-6528%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A38%3A36Z%22%7D%7D%2C%7B%22key%22%3A%22YSRCIJZY%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Shin%20et%20al.%22%2C%22parsedDate%22%3A%222017%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BShin%2C%20D.%20H.%2C%20Kim%2C%20J.%20M.%2C%20Seo%2C%20S.%20W.%2C%20Kim%2C%20J.%20H.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282017%29.%20Si%20heterojunction%20solar%20cells%20employing%20graphene%20transparent%20conductive%20electrodes%20co-doped%20with%20gold%20chlorides%20and%20silver%20nanowires.%20%26lt%3Bi%26gt%3BJournal%20of%20Alloys%20and%20Compounds%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B726%26lt%3B%5C%2Fi%26gt%3B%2C%201047%26%23x2013%3B1052.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.jallcom.2017.08.096%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.jallcom.2017.08.096%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Si%20heterojunction%20solar%20cells%20employing%20graphene%20transparent%20conductive%20electrodes%20co-doped%20with%20gold%20chlorides%20and%20silver%20nanowires%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sang%20Woo%22%2C%22lastName%22%3A%22Seo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Graphene%5C%2FSi%20Schottky%20junction%20is%20highly%20attractive%20for%20its%20application%20in%20solar%20cells%20due%20to%20the%20excellence%20of%20graphene%20as%20a%20transparent%20conducting%20electrode.%20However%2C%20the%20high%20sheet%20resistance%20of%20the%20chemical%20vapor%20deposition-grown%20graphene%20%5Cufb01lms%2C%20mostly%20used%20for%20the%20solar%20cells%2C%20is%20still%20one%20of%20the%20principal%20factors%20limiting%20the%20power%20conversion%20ef%5Cufb01ciency%20of%20graphene%5C%2FSi%20solar%20cells.%20Here%2C%20we%20report%20an%20approach%20of%20codoping%20with%20gold%20%28III%29%20chloride%20%28AuCl3%29%20and%20silver%20nanowires%20%28Ag%20NWs%29%20to%20reduce%20the%20sheet%20resistance%20%28Rs%29%20of%20graphene%20as%20well%20as%20to%20control%20its%20work%20function%20%28WG%29%20for%20well-matched%20graphene%5C%2FSi%20wafer%20junction.%20The%20molar%20concentration%20%28nD%29%20of%20AuCl3%20is%20varied%20from%201%20to%2010%20mM%20while%20the%20fraction%20%28nA%29%20of%20Ag%20NWs%20is%20%5Cufb01xed%20at%200.1%20wt%25%20for%20the%20fabrication%20of%20the%20solar%20cells%2C%20based%20on%20nA-dependent%20behaviors%20of%20Rs%20and%20WG.%20The%20co-doped%20graphene%5C%2Fn-Si%20Schottky%20solar%20cells%20show%20a%20maximum%20power-conversion%20ef%5Cufb01ciency%20of%207.01%25%20at%20nD%20%5Cu00bc%207.5%20mM%2C%20resulting%20from%20the%20increased%20barrier%20height%20at%20the%20graphene%5C%2FSi%20junction%20and%20the%20reduced%20sheet%20resistance%5C%2Ftransmittance%20of%20graphene%20by%20the%20co-doping%2C%20as%20proved%20from%20the%20nD-dependent%20behaviors%20of%20open-circuit%20voltage%2C%20DC%20conductivity%5C%2Foptical%20conductivity%20ratio%2C%20series%20resistance%2C%20and%20external%20quantum%20ef%5Cufb01ciency.%22%2C%22date%22%3A%2212%5C%2F2017%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.jallcom.2017.08.096%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS0925838817328256%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2209258388%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A38%3A51Z%22%7D%7D%2C%7B%22key%22%3A%224CGCMDU4%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Heo%20et%20al.%22%2C%22parsedDate%22%3A%222017%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BHeo%2C%20J.%20H.%2C%20Shin%2C%20D.%20H.%2C%20Kim%2C%20S.%2C%20Jang%2C%20M.%20H.%2C%20Lee%2C%20M.%20H.%2C%20Seo%2C%20S.%20W.%2C%20Choi%2C%20S.-H.%2C%20%26amp%3B%20Im%2C%20S.%20H.%20%282017%29.%20Highly%20efficient%20CH3NH3PbI3%20perovskite%20solar%20cells%20prepared%20by%20AuCl3-doped%20graphene%20transparent%20conducting%20electrodes.%20%26lt%3Bi%26gt%3BChemical%20Engineering%20Journal%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B323%26lt%3B%5C%2Fi%26gt%3B%2C%20153%26%23x2013%3B159.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.cej.2017.04.097%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.cej.2017.04.097%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Highly%20efficient%20CH3NH3PbI3%20perovskite%20solar%20cells%20prepared%20by%20AuCl3-doped%20graphene%20transparent%20conducting%20electrodes%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jin%20Hyuck%22%2C%22lastName%22%3A%22Heo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Min%20Hyeok%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Min%20Ho%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sang%20Woo%22%2C%22lastName%22%3A%22Seo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sang%20Hyuk%22%2C%22lastName%22%3A%22Im%22%7D%5D%2C%22abstractNote%22%3A%22We%20employed%20AuCl3-doped%20graphene%20as%20a%20p-type%20transparent%20conducting%20electrode%20%28TCE%29%20in%20an%20p-i-n%20type%20CH3NH3PbI3%20perovskite%20solar%20cell%20using%20poly%20%283%2C4-ethylenedioxythiophene%29%3Apoly%28styrene%20sulfonate%29%20and%20phenyl-C61-butyric%20acid%20methyl%20ester%20as%20the%20hole%20and%20electron%20transporting%20layers%2C%20respectively%2C%20and%20obtained%2017.4%5Cu201317.9%25%20power%20conversion%20ef%5Cufb01ciency%20at%201%20Sun%20condition.%20The%20work%20function%20of%20the%20AuCl3-doped%20graphene%20TCE%20was%20controllable%20from%204.52%20to%204.86%20eV.%20Due%20to%20the%20p-type%20doping%20by%20the%20AuCl3%20treatment%2C%20the%20graphene%20TCE%20shows%20good%20hole%20mobility%20and%20greatly-improved%20sheet%20resistance%20%28%2070%20ohm%5C%2Fcm2%29%20compared%20to%20the%20pristine%20graphene%20TCE%20%28%20890%20ohm%5C%2Fcm2%29%20but%20its%20transmittance%20was%20gradually%20decreased%20with%20the%20doping%20concentration%20%28nD%29.%20Owing%20to%20the%20trade-off%20correlation%20between%20the%20sheet%20resistance%20and%20the%20transmittance%20of%20the%20AuCl3-doped%20graphene%20TCE%2C%20the%20ratio%20of%20DC%20conductivity%20and%20optical%20conductivity%20was%20the%20highest%20at%20nD%20%3D%207.5%20mM.%20Therefore%2C%20the%20highest%20performance%20was%20achievable%20by%20using%207.5%20mM%20AuCl3-doped%20graphene%20TCE.%22%2C%22date%22%3A%2209%5C%2F2017%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.cej.2017.04.097%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS1385894717306423%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2213858947%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A38%3A44Z%22%7D%7D%2C%7B%22key%22%3A%22JHVQZZEA%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222017%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20J.%20M.%2C%20Seo%2C%20S.%20W.%2C%20Shin%2C%20D.%20H.%2C%20Lee%2C%20H.%20S.%2C%20Kim%2C%20J.%20H.%2C%20Jang%2C%20C.%20W.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282017%29.%20Ag-nanowires-doped%20graphene%5C%2FSi%20Schottky-junction%20solar%20cells%20encapsulated%20with%20another%20graphene%20layer.%20%26lt%3Bi%26gt%3BCurrent%20Applied%20Physics%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B17%26lt%3B%5C%2Fi%26gt%3B%288%29%2C%201136%26%23x2013%3B1141.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.cap.2017.05.002%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.cap.2017.05.002%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Ag-nanowires-doped%20graphene%5C%2FSi%20Schottky-junction%20solar%20cells%20encapsulated%20with%20another%20graphene%20layer%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sang%20Woo%22%2C%22lastName%22%3A%22Seo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ha%20Seung%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Graphene%5C%2Fsilver%20nanowires%20%28Ag%20NWs%29-doped%20graphene%20stacks%20are%20employed%20for%20Si%20Schottky-junction%20solar%20cells%20as%20transparent%20conductive%20electrodes%20%28TCEs%29.%20The%20doping%20of%20graphene%20by%20Ag%20NWs%20decreases%20the%20series%20resistance%20of%20the%20solar%20cells%20and%20enhances%20the%20electrical%20conductivity%20of%20the%20graphene%20TCEs%2C%20resulting%20in%20remarkable%20improvements%20of%20the%20diode%20properties%20of%20the%20solar%20cells.%20In%20addition%2C%20the%20Ag%20NWs%20on%20the%20graphene%20reduces%20the%20re%5Cufb02ectance%20of%20the%20solar%20cells%20as%20well%20as%20the%20transmittance%20of%20the%20graphene%20TCEs.%20This%20trade-off%20correlation%20makes%20the%20power-conversion%20ef%5Cufb01ciency%20maximized%20to%203.51%25%20at%20concentration%20of%20Ag%20NWs%20%28nA%29%20%5Cu00bc%200.1%20wt%25.%20The%20long-term%20stabilities%20of%20the%20photovoltaic%20properties%20are%20greatly%20improved%20by%20the%20encapsulation%20of%20the%20Ag%20NWs%5C%2Fgraphene%20TCEs%20with%20another%20graphene%20because%20of%20the%20excellence%20of%20graphene%20as%20a%20gas-barrier.%20These%20and%20other%20nA-dependent%20behaviors%20of%20Raman%20spectra%2C%20work%20function%2C%20sheet%20resistance%2C%20external%20quantum%20ef%5Cufb01ciency%2C%20and%20DC%20conductivity%5C%2Foptical%20conductivity%20ratio%20are%20discussed%20to%20explain%20the%20photovoltaic%20properties%20of%20the%20solar%20cells.%22%2C%22date%22%3A%2208%5C%2F2017%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.cap.2017.05.002%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS1567173917301402%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2215671739%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A38%3A42Z%22%7D%7D%2C%7B%22key%22%3A%22S6XJKSJ2%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Shin%20et%20al.%22%2C%22parsedDate%22%3A%222017%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BShin%2C%20D.%20H.%2C%20Kim%2C%20J.%20H.%2C%20Kim%2C%20J.%20H.%2C%20Jang%2C%20C.%20W.%2C%20Seo%2C%20S.%20W.%2C%20Lee%2C%20H.%20S.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282017%29.%20Graphene%5C%2Fporous%20silicon%20Schottky-junction%20solar%20cells.%20%26lt%3Bi%26gt%3BJournal%20of%20Alloys%20and%20Compounds%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B715%26lt%3B%5C%2Fi%26gt%3B%2C%20291%26%23x2013%3B296.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.jallcom.2017.05.001%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.jallcom.2017.05.001%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Graphene%5C%2Fporous%20silicon%20Schottky-junction%20solar%20cells%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jung%20Hyun%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sang%20Woo%22%2C%22lastName%22%3A%22Seo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ha%20Seung%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Porous%20silicon%20%28PSi%29%20is%20highly%20attractive%20for%20the%20solar%20cell%20applications%20due%20to%20its%20unique%20properties%20such%20as%20ef%5Cufb01cient%20antire%5Cufb02ection%2C%20band%20gap%20widening%2C%20broad%20range%20of%20optical%20absorption%5C%2Ftransmission%2C%20and%20surface%20passivation%5C%2Ftexturization%20effect.%20We%20%5Cufb01rst%20report%20PSi%20Schottky-type%20heterojunction%20solar%20cells%20by%20employing%20graphene%20transparent%20conductive%20electrodes%20doped%20with%20silver%20nanowires%20%28Ag%20NWs%29.%20The%20PSi%20is%20formed%20based%20on%20metal-assisted%20chemical%20etching%20process%2C%20and%20its%20porosity%20is%20controlled%20by%20varying%20the%20deposition%20time%20%28td%29%20of%20Ag%20nanoparticles%20used%20for%20the%20etching.%20The%20Ag%20NWs-doped%20graphene%5C%2FPSi%20solar%20cells%20show%20a%20maximum%20power-conversion%20ef%5Cufb01ciency%20%28PCE%29%20of%204.03%25%20at%20td%20%5Cu00bc%203%20s%5C%2Fconcentration%20%28nA%29%20of%20Ag%20NWs%20%5Cu00bc%200.1%20wt%20percent%20%28wt%25%29.%20As%20td%20increases%2C%20the%20diode%20ideality%20factor%20and%20the%20light%20absorption%20increase.%20As%20nA%20increases%2C%20the%20work%20function%20%28thus%20the%20open%20circuit%20voltage%29%20and%20the%20transmittance%20decrease%20whilst%20the%20light%20absorption%20increases%5C%2Fthe%20sheet%20resistance%20decreases.%20These%20trade-offs%20explain%20why%20the%20PCE%20is%20maximized%20at%20td%20%5Cu00bc%203%20s%5C%2FnA%20%5Cu00bc%200.1%20wt%25.%22%2C%22date%22%3A%2208%5C%2F2017%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.jallcom.2017.05.001%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS0925838817315487%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2209258388%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A38%3A40Z%22%7D%7D%2C%7B%22key%22%3A%228MJEBBWM%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Jang%20et%20al.%22%2C%22parsedDate%22%3A%222017%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BJang%2C%20C.%20W.%2C%20Kim%2C%20J.%20H.%2C%20Lee%2C%20D.%20H.%2C%20Shin%2C%20D.%20H.%2C%20Kim%2C%20S.%2C%20Choi%2C%20S.-H.%2C%20Hwang%2C%20E.%2C%20%26amp%3B%20Elliman%2C%20R.%20G.%20%282017%29.%20Effect%20of%20stopping-layer-assisted%20boron-ion%20implantation%20on%20the%20electrical%20properties%20of%20graphene%3A%20Interplay%20between%20strain%20and%20charge%20doping.%20%26lt%3Bi%26gt%3BCarbon%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B118%26lt%3B%5C%2Fi%26gt%3B%2C%20343%26%23x2013%3B347.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.carbon.2017.03.058%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.carbon.2017.03.058%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Effect%20of%20stopping-layer-assisted%20boron-ion%20implantation%20on%20the%20electrical%20properties%20of%20graphene%3A%20Interplay%20between%20strain%20and%20charge%20doping%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dae%20Hun%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Euyheon%22%2C%22lastName%22%3A%22Hwang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22R.G.%22%2C%22lastName%22%3A%22Elliman%22%7D%5D%2C%22abstractNote%22%3A%22We%20report%20a%20new%20method%20of%20ion%20implantation%20for%20hole%20doping%20of%20graphene%20in%20which%20a%20layer%20of%20polymethyl%20methacrylate%20%28PMMA%29%20is%20used%20as%20a%20stopping%20layer%20to%20control%20the%20B-ion%20distribution%20in%20the%20graphene%20layer.%20This%20method%20is%20very%20useful%20for%20graphene%20doping%20in%20many%20aspects%20because%20it%20employs%20the%20ion%20energy%20comparable%20to%20what%20is%20commercially%20used%20in%20the%20semiconductor%20processes%20and%20strongly%20enhances%20the%20doping%20effect%20in%20contrast%20to%20the%20previous%20studies%2C%20resulting%20from%20B-ions-induced%20gating%20effect.%20PMMA%5C%2F%20graphene%5C%2FCu-foil%20stacks%20were%20implanted%20with%2035%20keV%20B%20ions%20to%20nominal%20%5Cufb02uences%20%28fB%29%20of%200.5%20e50%201010%20cm%202%20at%20room%20temperature.%20The%20electron%5C%2Fhole%20mobilities%20are%20sharply%20reduced%20by%20doping%20at%20fB%20%5Cu00bc%200.5%201010%20cm%202%2C%20but%20above%20this%2C%20they%20increase%20with%20increasing%20fB%2C%20as%20estimated%20from%20the%20Dirac%20curves.%20The%20Raman%20data%20and%20theoretical%20considerations%20suggest%20that%20the%20electrical%20properties%20of%20the%20Bdoped%20graphene%20are%20governed%20by%20strain%20effect%20at%20low%20fB%2C%20but%20by%20charge-doping%20effect%20at%20high%20fB.%22%2C%22date%22%3A%2207%5C%2F2017%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.carbon.2017.03.058%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS0008622317302993%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2200086223%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A38%3A38Z%22%7D%7D%2C%7B%22key%22%3A%22Z3SWKSKW%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Shin%20et%20al.%22%2C%22parsedDate%22%3A%222017%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BShin%2C%20D.%20H.%2C%20Jang%2C%20C.%20W.%2C%20Kim%2C%20J.%20H.%2C%20Kim%2C%20J.%20M.%2C%20Lee%2C%20H.%20S.%2C%20Seo%2C%20S.%20W.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282017%29.%20Enhancement%20of%20efficiency%20and%20long-term%20stability%20in%20graphene%5C%2FSi-quantum-dot%20heterojunction%20photodetectors%20by%20employing%20bis%28trifluoromethanesulfonyl%29-amide%20as%20a%20dopant%20for%20graphene.%20%26lt%3Bi%26gt%3BJournal%20of%20Materials%20Chemistry%20C%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B5%26lt%3B%5C%2Fi%26gt%3B%2848%29%2C%2012737%26%23x2013%3B12743.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1039%5C%2FC7TC04647B%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1039%5C%2FC7TC04647B%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Enhancement%20of%20efficiency%20and%20long-term%20stability%20in%20graphene%5C%2FSi-quantum-dot%20heterojunction%20photodetectors%20by%20employing%20bis%28trifluoromethanesulfonyl%29-amide%20as%20a%20dopant%20for%20graphene%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ha%20Seung%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sang%20Woo%22%2C%22lastName%22%3A%22Seo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Bis%28trifluoromethanesulfonyl%29-amide%20%28TFSA%29%20is%20for%20the%20first%20time%20employed%20as%20a%20dopant%20for%20graphene%20for%20graphene%5C%2FSi-quantum-dots-based%20photodetectors.%5Cn%20%20%20%20%20%20%20%20%20%20%2C%20%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20We%20for%20the%20first%20time%20employ%20bis%28trifluoromethanesulfonyl%29-amide%20as%20a%20dopant%20for%20graphene%20to%20enhance%20the%20efficiency%20and%20the%20stability%20of%20graphene%5C%2FSi%20quantum%20dot%20%28SQDs%29-embedded%20SiO%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%28SQDs%3ASiO%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%29%20multilayer%20%28ML%29%20heterojunction%20photodetectors%20%28PDs%29.%20With%20increasing%20the%20doping%20concentration%20%28%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20n%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20D%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%29%20to%2030%20mM%2C%20the%20sheet%20resistance%20of%20the%20doped-graphene%20transparent%20conductive%20electrode%20%28TCE%29%20sharply%20decreases%20to%20%5Cu223c155%20ohm%20sq%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%5Cu22121%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20with%20only%201%25%20reduction%20in%20its%20transmittance%20at%20550%20nm%2C%20whilst%20the%20work%20function%20gradually%20increases%20to%20%5Cu223c4.95%20eV%2C%20indicating%20p-type%20doping%2C%20useful%20for%20the%20graphene%5C%2FSQDs%3ASiO%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20MLs%20interface.%20The%20DC%20conductivity%5C%2Foptical%20conductivity%20ratio%20saturates%20to%20%5Cu223c75%20at%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20n%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20D%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%3D%2020%20mM%2C%20much%20larger%20than%20the%20minimum%20industry%20standard%20%28%3D%2035%29%20for%20the%20optoelectronic%20applications%20of%20TCEs.%20The%20PDs%20optimized%20at%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20n%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20D%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%3D%2020%20mM%20exhibit%200.413%20A%20W%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%5Cu22121%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20responsivity%20%28%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20R%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%29%2C%2092%20dB%20linear%20dynamic%20range%2C%201.09%20%5Cu00d7%2010%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%2010%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20cm%20Hz%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%201%5C%2F2%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20W%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%5Cu22121%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20detectivity%2C%20and%2081.33%25%20external%20quantum%20efficiency%20at%20a%20peak%20wavelength%20of%20630%20nm%2C%20and%20the%20loss%20of%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20R%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20is%20almost%20negligible%20while%20the%20PDs%20are%20kept%20for%20700%20h%20in%20air.%20These%20characteristics%20are%20comparable%20to%20those%20of%20commercially-available%20Si%20PDs%20and%20better%20than%20those%20of%20previously-reported%20graphene%5C%2FSi%20PDs.%22%2C%22date%22%3A%222017%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1039%5C%2FC7TC04647B%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fxlink.rsc.org%5C%2F%3FDOI%3DC7TC04647B%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%222050-7526%2C%202050-7534%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A38%3A54Z%22%7D%7D%2C%7B%22key%22%3A%227Y9ZM9P5%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222017%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20J.%20H.%2C%20Shin%2C%20D.%20H.%2C%20Lee%2C%20H.%20S.%2C%20Jang%2C%20C.%20W.%2C%20Kim%2C%20J.%20M.%2C%20Seo%2C%20S.%20W.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282017%29.%20Enhancement%20of%20efficiency%20in%20graphene%5C%2Fporous%20silicon%20solar%20cells%20by%20co-doping%20graphene%20with%20gold%20nanoparticles%20and%20bis%28trifluoromethanesulfonyl%29-amide.%20%26lt%3Bi%26gt%3BJournal%20of%20Materials%20Chemistry%20C%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B5%26lt%3B%5C%2Fi%26gt%3B%2835%29%2C%209005%26%23x2013%3B9011.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1039%5C%2FC7TC02686B%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1039%5C%2FC7TC02686B%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Enhancement%20of%20efficiency%20in%20graphene%5C%2Fporous%20silicon%20solar%20cells%20by%20co-doping%20graphene%20with%20gold%20nanoparticles%20and%20bis%28trifluoromethanesulfonyl%29-amide%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ha%20Seung%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sang%20Woo%22%2C%22lastName%22%3A%22Seo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22The%20co-doping%20of%20graphene%20with%20Au%20nanoparticles%20and%20bis%28trifluoromethanesulfonyl%29-amide%20is%20employed%20for%20the%20first%20time%20to%20enhance%20the%20performance%20of%20graphene%5C%2Fporous%20Si%20solar%20cells.%5Cn%20%20%20%20%20%20%20%20%20%20%2C%20%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20Porous%20silicon%20%28PSi%29%20is%20an%20attractive%20building%20block%20for%20photonic%20devices%2C%20such%20as%20solar%20cells%20and%20photodetectors%2C%20due%20to%20its%20high%20surface%20to%20volume%20ratio%2C%20low%20reflection%20and%20high%20optical%20gain.%20In%20this%20work%2C%20PSi%20is%20prepared%20based%20on%20metal-assisted%20chemical%20etching%20by%20varying%20the%20deposition%20time%20%28%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20t%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20d%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%29%20of%20Ag%20or%20Au%20nanoparticles%20%28NPs%29%20for%20the%20etching%20of%20Si%20from%201%20to%207%20s%2C%20thereby%20controlling%20the%20porosity%20of%20PSi.%20The%20co-doping%20of%20graphene%20with%20Au%20NPs%20and%20bis%28trifluoromethanesulfonyl%29-amide%20%5B%28CF%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%203%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20SO%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%29%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20NH%5D%20is%20employed%20for%20the%20first%20time%20to%20enhance%20the%20performance%20of%20graphene%5C%2FPSi%20Schottky-junction%20solar%20cells.%20Co-doping%20is%20proven%20to%20be%20very%20effective%20for%20increasing%20the%20work%20function%20of%20graphene%20as%20well%20as%20its%20electrical%20conductivity%2C%20resulting%20in%20efficient%20separation%20and%20collection%20of%20photo-induced%20electron%5Cu2013hole%20pairs%20in%20solar%20cells.%20The%20co-doped%20graphene%5C%2FPSi%20solar%20cells%20show%20a%20maximum%20power%20conversion%20efficiency%20%28PCE%29%20of%2010.69%25%20at%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20t%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20d%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%3D%205%20s%2C%20and%20lose%20only%205%25%20of%20the%20original%20PCE%20value%20after%2015%20days%20in%20air.%20These%20results%20provide%20a%20new%20route%20for%20fabricating%20highly%20efficient%20and%20stable%20graphene%5C%2FPSi%20junction%20solar%20cells.%22%2C%22date%22%3A%222017%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1039%5C%2FC7TC02686B%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fxlink.rsc.org%5C%2F%3FDOI%3DC7TC02686B%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%222050-7526%2C%202050-7534%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A38%3A46Z%22%7D%7D%5D%7D
Seo, S. W., Lee, H. S., Shin, D. H., Kim, J. H., Jang, C. W., Kim, J. M., Kim, S., & Choi, S.-H. (2017). Highly-stable and -flexible graphene/(CF3 SO2 )2 NH/graphene transparent conductive electrodes for organic solar cells. Nanotechnology, 28(42), 425203. https://doi.org/10.1088/1361-6528/aa8533
Lee, S. H., Kwak, G. Y., Hong, S., Kim, C., Kim, S., Kim, A., & Kim, K. J. (2017). Ultraviolet responses of a heterojunction Si quantum dot solar cell. Nanotechnology, 28(3), 035402. https://doi.org/10.1088/1361-6528/28/3/035402
Shin, D. H., Kim, J. M., Seo, S. W., Kim, J. H., Kim, S., & Choi, S.-H. (2017). Si heterojunction solar cells employing graphene transparent conductive electrodes co-doped with gold chlorides and silver nanowires. Journal of Alloys and Compounds, 726, 1047–1052. https://doi.org/10.1016/j.jallcom.2017.08.096
Heo, J. H., Shin, D. H., Kim, S., Jang, M. H., Lee, M. H., Seo, S. W., Choi, S.-H., & Im, S. H. (2017). Highly efficient CH3NH3PbI3 perovskite solar cells prepared by AuCl3-doped graphene transparent conducting electrodes. Chemical Engineering Journal, 323, 153–159. https://doi.org/10.1016/j.cej.2017.04.097
Kim, J. M., Seo, S. W., Shin, D. H., Lee, H. S., Kim, J. H., Jang, C. W., Kim, S., & Choi, S.-H. (2017). Ag-nanowires-doped graphene/Si Schottky-junction solar cells encapsulated with another graphene layer. Current Applied Physics, 17(8), 1136–1141. https://doi.org/10.1016/j.cap.2017.05.002
Shin, D. H., Kim, J. H., Kim, J. H., Jang, C. W., Seo, S. W., Lee, H. S., Kim, S., & Choi, S.-H. (2017). Graphene/porous silicon Schottky-junction solar cells. Journal of Alloys and Compounds, 715, 291–296. https://doi.org/10.1016/j.jallcom.2017.05.001
Jang, C. W., Kim, J. H., Lee, D. H., Shin, D. H., Kim, S., Choi, S.-H., Hwang, E., & Elliman, R. G. (2017). Effect of stopping-layer-assisted boron-ion implantation on the electrical properties of graphene: Interplay between strain and charge doping. Carbon, 118, 343–347. https://doi.org/10.1016/j.carbon.2017.03.058
Shin, D. H., Jang, C. W., Kim, J. H., Kim, J. M., Lee, H. S., Seo, S. W., Kim, S., & Choi, S.-H. (2017). Enhancement of efficiency and long-term stability in graphene/Si-quantum-dot heterojunction photodetectors by employing bis(trifluoromethanesulfonyl)-amide as a dopant for graphene. Journal of Materials Chemistry C, 5(48), 12737–12743. https://doi.org/10.1039/C7TC04647B
Kim, J. H., Shin, D. H., Lee, H. S., Jang, C. W., Kim, J. M., Seo, S. W., Kim, S., & Choi, S.-H. (2017). Enhancement of efficiency in graphene/porous silicon solar cells by co-doping graphene with gold nanoparticles and bis(trifluoromethanesulfonyl)-amide. Journal of Materials Chemistry C, 5(35), 9005–9011. https://doi.org/10.1039/C7TC02686B
2016
19376884
TCJXIC7M
2016
1
apa
50
date
desc
1442
https://nano.khu.ac.kr/wp-content/plugins/zotpress/
%7B%22status%22%3A%22success%22%2C%22updateneeded%22%3Afalse%2C%22instance%22%3Afalse%2C%22meta%22%3A%7B%22request_last%22%3A0%2C%22request_next%22%3A0%2C%22used_cache%22%3Atrue%7D%2C%22data%22%3A%5B%7B%22key%22%3A%224YXUIETM%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222016-08-18%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20J.%2C%20Park%2C%20S.-Y.%2C%20Kim%2C%20S.%2C%20Lee%2C%20D.%20H.%2C%20Kim%2C%20J.%20H.%2C%20Kim%2C%20J.%20M.%2C%20Kang%2C%20H.%2C%20Han%2C%20J.-S.%2C%20Park%2C%20J.%20W.%2C%20Lee%2C%20H.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282016%29.%20Precise%20and%20selective%20sensing%20of%20DNA-DNA%20hybridization%20by%20graphene%5C%2FSi-nanowires%20diode-type%20biosensors.%20%26lt%3Bi%26gt%3BScientific%20Reports%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B6%26lt%3B%5C%2Fi%26gt%3B%281%29%2C%2031984.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1038%5C%2Fsrep31984%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1038%5C%2Fsrep31984%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Precise%20and%20selective%20sensing%20of%20DNA-DNA%20hybridization%20by%20graphene%5C%2FSi-nanowires%20diode-type%20biosensors%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jungkil%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Shin-Young%22%2C%22lastName%22%3A%22Park%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dae%20Hun%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Hee%22%2C%22lastName%22%3A%22Kang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Joong-Soo%22%2C%22lastName%22%3A%22Han%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jun%20Woo%22%2C%22lastName%22%3A%22Park%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Hosun%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Abstract%5Cn%20%20%20%20%20%20%20%20%20%20%20%20Single-Si-nanowire%20%28NW%29-based%20DNA%20sensors%20have%20been%20recently%20developed%2C%20but%20their%20sensitivity%20is%20very%20limited%20because%20of%20high%20noise%20signals%2C%20originating%20from%20small%20source-drain%20current%20of%20the%20single%20Si%20NW.%20Here%2C%20we%20demonstrate%20that%20chemical-vapor-deposition-grown%20large-scale%20graphene%5C%2Fsurface-modified%20vertical-Si-NW-arrays%20junctions%20can%20be%20utilized%20as%20diode-type%20biosensors%20for%20highly-sensitive%20and%20-selective%20detection%20of%20specific%20oligonucleotides.%20For%20this%2C%20a%20twenty-seven-base-long%20synthetic%20oligonucleotide%2C%20which%20is%20a%20fragment%20of%20human%20DENND2D%20promoter%20sequence%2C%20is%20first%20decorated%20as%20a%20probe%20on%20the%20surface%20of%20vertical%20Si-NW%20arrays%2C%20and%20then%20the%20complementary%20oligonucleotide%20is%20hybridized%20to%20the%20probe.%20This%20hybridization%20gives%20rise%20to%20a%20doping%20effect%20on%20the%20surface%20of%20Si%20NWs%2C%20resulting%20in%20the%20increase%20of%20the%20current%20in%20the%20biosensor.%20The%20current%20of%20the%20biosensor%20increases%20from%2019%20to%20120%25%20as%20the%20concentration%20of%20the%20target%20DNA%20varies%20from%200.1%20to%20500%5Cu2009nM.%20In%20contrast%2C%20such%20biosensing%20does%20not%20come%20into%20play%20by%20the%20use%20of%20the%20oligonucleotide%20with%20incompatible%20or%20mismatched%20sequences.%20Similar%20results%20are%20observed%20from%20photoluminescence%20microscopic%20images%20and%20spectra.%20The%20biosensors%20show%20very-uniform%20current%20changes%20with%20standard%20deviations%20ranging%20~1%20to%20~10%25%20by%20ten-times%20endurance%20tests.%20These%20results%20are%20very%20promising%20for%20their%20applications%20in%20accurate%2C%20selective%2C%20and%20stable%20biosensing.%22%2C%22date%22%3A%222016-08-18%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1038%5C%2Fsrep31984%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fwww.nature.com%5C%2Farticles%5C%2Fsrep31984%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%222045-2322%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A38%3A06Z%22%7D%7D%2C%7B%22key%22%3A%222NLXFP22%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Lee%20et%20al.%22%2C%22parsedDate%22%3A%222016-07-28%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BLee%2C%20K.%20W.%2C%20Jang%2C%20C.%20W.%2C%20Shin%2C%20D.%20H.%2C%20Kim%2C%20J.%20M.%2C%20Kang%2C%20S.%20S.%2C%20Lee%2C%20D.%20H.%2C%20Kim%2C%20S.%2C%20Choi%2C%20S.-H.%2C%20%26amp%3B%20Hwang%2C%20E.%20%282016%29.%20Light-induced%20negative%20differential%20resistance%20in%20graphene%5C%2FSi-quantum-dot%20tunneling%20diodes.%20%26lt%3Bi%26gt%3BScientific%20Reports%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B6%26lt%3B%5C%2Fi%26gt%3B%281%29%2C%2030669.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1038%5C%2Fsrep30669%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1038%5C%2Fsrep30669%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Light-induced%20negative%20differential%20resistance%20in%20graphene%5C%2FSi-quantum-dot%20tunneling%20diodes%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Kyeong%20Won%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soo%20Seok%22%2C%22lastName%22%3A%22Kang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dae%20Hun%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Euyheon%22%2C%22lastName%22%3A%22Hwang%22%7D%5D%2C%22abstractNote%22%3A%22Abstract%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20One%20of%20the%20interesing%20tunneling%20phenomena%20is%20negative%20differential%20resistance%20%28NDR%29%2C%20the%20basic%20principle%20of%20resonant-tunneling%20diodes.%20NDR%20has%20been%20utilized%20in%20various%20semiconductor%20devices%20such%20as%20frequency%20multipliers%2C%20oscillators%2C%20relfection%20amplifiers%2C%20logic%20switches%2C%20and%20memories.%20The%20NDR%20in%20graphene%20has%20been%20also%20reported%20theoretically%20as%20well%20as%20experimentally%2C%20but%20should%20be%20further%20studied%20to%20fully%20understand%20its%20mechanism%2C%20useful%20for%20practical%20device%20applications.%20Especially%2C%20there%20has%20been%20no%20observation%20about%20light-induced%20NDR%20%28LNDR%29%20in%20graphene-related%20structures%20despite%20very%20few%20reports%20on%20the%20LNDR%20in%20GaAs-based%20heterostructures.%20Here%2C%20we%20report%20first%20observation%20of%20LNDR%20in%20graphene%5C%2FSi%20quantum%20dots-embedded%20SiO%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%28SQDs%3ASiO%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%29%20multilayers%20%28MLs%29%20tunneling%20diodes.%20The%20LNDR%20strongly%20depends%20on%20temperature%20%28%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20T%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%29%20as%20well%20as%20on%20SQD%20size%2C%20and%20the%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20T%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20dependence%20is%20consistent%20with%20photocurrent%20%28PC%29-decay%20behaviors.%20With%20increasing%20light%20power%2C%20the%20PC-voltage%20curves%20are%20more%20structured%20with%20peak-to-valley%20ratios%20over%202%20at%20room%20temperature.%20The%20physical%20mechanism%20of%20the%20LNDR%2C%20governed%20by%20resonant%20tunneling%20of%20charge%20carriers%20through%20the%20minibands%20formed%20across%20the%20graphene%5C%2FSQDs%3ASiO%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20MLs%20and%20by%20their%20nonresonant%20phonon-assisted%20tunneling%2C%20is%20discussed%20based%20on%20theoretical%20considerations.%22%2C%22date%22%3A%222016-07-28%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1038%5C%2Fsrep30669%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fwww.nature.com%5C%2Farticles%5C%2Fsrep30669%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%222045-2322%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A38%3A04Z%22%7D%7D%2C%7B%22key%22%3A%22JEJG5W5H%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222016-06-02%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20S.%2C%20Shin%2C%20D.%20H.%2C%20Kim%2C%20J.%2C%20Jang%2C%20C.%20W.%2C%20Kang%2C%20S.%20S.%2C%20Kim%2C%20J.%20M.%2C%20Kim%2C%20J.%20H.%2C%20Lee%2C%20D.%20H.%2C%20Kim%2C%20J.%20H.%2C%20Choi%2C%20S.-H.%2C%20%26amp%3B%20Hwang%2C%20S.%20W.%20%282016%29.%20Energy%20transfer%20from%20an%20individual%20silica%20nanoparticle%20to%20graphene%20quantum%20dots%20and%20resulting%20enhancement%20of%20photodetector%20responsivity.%20%26lt%3Bi%26gt%3BScientific%20Reports%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B6%26lt%3B%5C%2Fi%26gt%3B%281%29%2C%2027145.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1038%5C%2Fsrep27145%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1038%5C%2Fsrep27145%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Energy%20transfer%20from%20an%20individual%20silica%20nanoparticle%20to%20graphene%20quantum%20dots%20and%20resulting%20enhancement%20of%20photodetector%20responsivity%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jungkil%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soo%20Seok%22%2C%22lastName%22%3A%22Kang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dae%20Hun%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jung%20Hyun%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%20Won%22%2C%22lastName%22%3A%22Hwang%22%7D%5D%2C%22abstractNote%22%3A%22Abstract%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20F%5Cu00f6rster%20resonance%20energy%20transfer%20%28FRET%29%2C%20referred%20to%20as%20the%20transfer%20of%20the%20photon%20energy%20absorbed%20in%20donor%20to%20acceptor%2C%20has%20received%20much%20attention%20as%20an%20important%20physical%20phenomenon%20for%20its%20potential%20applications%20in%20optoelectronic%20devices%20as%20well%20as%20for%20the%20understanding%20of%20some%20biological%20systems.%20If%20one-atom-thick%20graphene%20is%20used%20for%20donor%20or%20acceptor%2C%20it%20can%20minimize%20the%20separation%20between%20donor%20and%20acceptor%2C%20thereby%20maximizing%20the%20FRET%20efficiency%20%28%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20E%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20FRET%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%29.%20Here%2C%20we%20report%20first%20fabrication%20of%20a%20FRET%20system%20composed%20of%20silica%20nanoparticles%20%28SNPs%29%20and%20graphene%20quantum%20dots%20%28GQDs%29%20as%20donors%20and%20acceptors%2C%20respectively.%20The%20FRET%20from%20SNPs%20to%20GQDs%20with%20an%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20E%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20FRET%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20of%20%5Cu223c78%25%20is%20demonstrated%20from%20excitation-dependent%20photoluminescence%20spectra%20and%20decay%20curves.%20The%20photodetector%20%28PD%29%20responsivity%20%28R%29%20of%20the%20FRET%20system%20at%20532%5Cu2009nm%20is%20enhanced%20by%2010%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%200%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%5Cu223c10%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%201%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%5C%2F10%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%5Cu223c10%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%203%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20times%20under%20forward%5C%2Freverse%20biases%2C%20respectively%2C%20compared%20to%20the%20PD%20containing%20solely%20GQDs.%20This%20remarkable%20enhancement%20is%20understood%20by%20network-like%20current%20paths%20formed%20by%20the%20GQDs%20on%20the%20SNPs%20and%20easy%20transfer%20of%20the%20carriers%20generated%20from%20the%20SNPs%20into%20the%20GQDs%20due%20to%20their%20close%20attachment.%20The%20R%20is%202%5Cu223c3%20times%20further%20enhanced%20at%20325%5Cu2009nm%20by%20the%20FRET%20effect.%22%2C%22date%22%3A%222016-06-02%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1038%5C%2Fsrep27145%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fwww.nature.com%5C%2Farticles%5C%2Fsrep27145%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%222045-2322%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A38%3A01Z%22%7D%7D%2C%7B%22key%22%3A%223BS4YAVH%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222016-01-29%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20S.%2C%20Shin%2C%20D.%20H.%2C%20Kim%2C%20J.%20H.%2C%20Jang%2C%20C.%20W.%2C%20Park%2C%20J.%20W.%2C%20Lee%2C%20H.%2C%20Choi%2C%20S.-H.%2C%20Kim%2C%20S.%20H.%2C%20Yee%2C%20K.-J.%2C%20Bansal%2C%20N.%2C%20%26amp%3B%20Oh%2C%20S.%20%282016%29.%20Resonance%20effects%20in%20thickness-dependent%20ultrafast%20carrier%20and%20phonon%20dynamics%20of%20topological%20insulator%20Bi%26lt%3Bsub%26gt%3B2%26lt%3B%5C%2Fsub%26gt%3B%20Se%26lt%3Bsub%26gt%3B3%26lt%3B%5C%2Fsub%26gt%3B.%20%26lt%3Bi%26gt%3BNanotechnology%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B27%26lt%3B%5C%2Fi%26gt%3B%284%29%2C%20045705.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F0957-4484%5C%2F27%5C%2F4%5C%2F045705%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F0957-4484%5C%2F27%5C%2F4%5C%2F045705%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Resonance%20effects%20in%20thickness-dependent%20ultrafast%20carrier%20and%20phonon%20dynamics%20of%20topological%20insulator%20Bi%3Csub%3E2%3C%5C%2Fsub%3E%20Se%3Csub%3E3%3C%5C%2Fsub%3E%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jun%20Woo%22%2C%22lastName%22%3A%22Park%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Hosun%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seung%20Hyun%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ki-Ju%22%2C%22lastName%22%3A%22Yee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Namrata%22%2C%22lastName%22%3A%22Bansal%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seongshik%22%2C%22lastName%22%3A%22Oh%22%7D%5D%2C%22abstractNote%22%3A%22Resonance%20effects%20in%20the%20thickness-dependent%20ultrafast%20carrier%20and%20phonon%20dynamics%20of%20topological%20insulator%20Bi2Se3%20are%20found%20irrespective%20of%20the%20kind%20of%20substrate%20by%20measuring%20thickness-dependent%20abrupt%20changes%20of%20pump-probe%20differential-re%5Cufb02ectivity%20signals%20%28%5Cu0394R%5C%2FR%29%20from%20Bi2Se3%20thin%20%5Cufb01lms%20on%20four%20different%20substrates%20of%20poly-%20and%20single-crystalline%20%28sc-%29%20ZnO%2C%20sc-GaN%20and%20SiO2.%20The%20absolute%20peak%20intensity%20of%20the%20%5Cu0394R%5C%2FR%20is%20maximized%20at%20%5Cu223ctC%20%286%20%5Cu223c%209%20quintuple%20layers%29%2C%20which%20is%20not%20directly%20related%20to%20but%20is%20very%20close%20to%20the%20critical%20thickness%20below%20which%20the%20energy%20gap%20opens.%20The%20intensities%20of%20the%20two%20phonon%20modes%20deduced%20from%20the%20oscillatory%20behaviors%20superimposed%20on%20the%20%5Cu0394R%5C%2FR%20pro%5Cufb01les%20are%20also%20peaked%20at%20%5Cu223ctC%20for%20the%20four%20kinds%20of%20substrates%2C%20consistent%20with%20the%20thickness-dependent%20Raman-scattering%20behaviors.%20These%20resonant%20effects%20and%20others%20are%20discussed%20based%20on%20possible%20physical%20mechanisms%20including%20the%20effects%20of%20threedimensional%20carrier%20depletion%20and%20intersurface%20coupling.%22%2C%22date%22%3A%222016-01-29%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1088%5C%2F0957-4484%5C%2F27%5C%2F4%5C%2F045705%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fiopscience.iop.org%5C%2Farticle%5C%2F10.1088%5C%2F0957-4484%5C%2F27%5C%2F4%5C%2F045705%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220957-4484%2C%201361-6528%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A37%3A57Z%22%7D%7D%2C%7B%22key%22%3A%22YB69UGIG%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Oh%20et%20al.%22%2C%22parsedDate%22%3A%222016-01-20%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BOh%2C%20S.%20D.%2C%20Kim%2C%20J.%2C%20Lee%2C%20D.%20H.%2C%20Kim%2C%20J.%20H.%2C%20Jang%2C%20C.%20W.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282016%29.%20Structural%20and%20optical%20characteristics%20of%20graphene%20quantum%20dots%20size-controlled%20and%20well-aligned%20on%20a%20large%20scale%20by%20polystyrene-nanosphere%20lithography.%20%26lt%3Bi%26gt%3BJournal%20of%20Physics%20D%3A%20Applied%20Physics%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B49%26lt%3B%5C%2Fi%26gt%3B%282%29%2C%20025308.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F0022-3727%5C%2F49%5C%2F2%5C%2F025308%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F0022-3727%5C%2F49%5C%2F2%5C%2F025308%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Structural%20and%20optical%20characteristics%20of%20graphene%20quantum%20dots%20size-controlled%20and%20well-aligned%20on%20a%20large%20scale%20by%20polystyrene-nanosphere%20lithography%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Si%20Duck%22%2C%22lastName%22%3A%22Oh%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jungkil%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dae%20Hun%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Graphene%20quantum%20dots%20%28GQDs%29%20are%20one%20of%20the%20most%20attractive%20graphene%20nanostructures%20due%20to%20their%20potential%20optoelectronic%20device%20applications%2C%20but%20it%20is%20a%20challenge%20to%20accurately%20control%20the%20size%20and%20arrangement%20of%20GQDs.%20In%20this%20report%2C%20we%20fabricate%20well-aligned%20GQDs%20on%20a%20large%20area%20by%20polystyrene%20%28PS%29-nanosphere%20%28NS%29%20lithography%20and%20study%20their%20structural%20and%20optical%20properties.%20Single-layer%20graphene%20grown%20on%20a%20Cu%20foil%20by%20chemical%20vapour%20deposition%20is%20patterned%20by%20reactive%20ion%20etching%20employing%20aligned%20PS-NS%20arrays%20as%20an%20etching%20mask.%20The%20size%20%28d%29%20of%20the%20GQDs%20is%20controlled%20from%2075%20to%2023%20nm%20by%20varying%20the%20etching%20time%2C%20as%20proved%20by%20scanning%20electron%20microscopy%20and%20atomic%20force%20microscopy.%20This%20method%20is%20well%20valid%20for%20both%20rigid%5C%2Fflexible%20target%20substrates%20and%20even%20for%20multilayer%20graphene%20formed%20by%20piling%20up%20single%20layers.%20The%20absorption%20peak%20of%20the%20GQDs%20is%20blue-shifted%20with%20respect%20to%20that%20of%20a%20graphene%20sheet%2C%20and%20is%20sequentially%20shifted%20to%20higher%20energies%20by%20reducing%20d%2C%20consistent%20with%20the%20quantum%20confinement%20effect%20%28QCE%29.%20The%20Raman%20D-to-G%20band%20intensity%20ratio%20shows%20an%20almost%20monotonic%20increase%20with%20decreasing%20d%2C%20resulting%20from%20the%20dominant%20contribution%20of%20the%20edge%20states%20at%20the%20periphery%20of%20smaller%20GQDs.%20The%20G-band%20frequency%20shows%20a%20three-step%20size-dependence%3A%20initial%20increase%2C%20interim%20saturation%2C%20and%20final%20decrease%20with%20decreasing%20d%2C%20thought%20to%20be%20caused%20by%20the%20competition%20between%20the%20QCE%20and%20edge-induced%20strain%20effect.%22%2C%22date%22%3A%222016-01-20%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1088%5C%2F0022-3727%5C%2F49%5C%2F2%5C%2F025308%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fiopscience.iop.org%5C%2Farticle%5C%2F10.1088%5C%2F0022-3727%5C%2F49%5C%2F2%5C%2F025308%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220022-3727%2C%201361-6463%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A37%3A55Z%22%7D%7D%2C%7B%22key%22%3A%22V9FLLM5C%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Hamh%20et%20al.%22%2C%22parsedDate%22%3A%222016%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BHamh%2C%20S.%20Y.%2C%20Park%2C%20S.-H.%2C%20Jerng%2C%20S.-K.%2C%20Jeon%2C%20J.%20H.%2C%20Chun%2C%20S.%20H.%2C%20Jeon%2C%20J.%20H.%2C%20Kahng%2C%20S.%20J.%2C%20Yu%2C%20K.%2C%20Choi%2C%20E.%20J.%2C%20Kim%2C%20S.%2C%20Choi%2C%20S.-H.%2C%20Bansal%2C%20N.%2C%20Oh%2C%20S.%2C%20Park%2C%20J.%2C%20Kho%2C%20B.-W.%2C%20Kim%2C%20J.%20S.%2C%20%26amp%3B%20Lee%2C%20J.%20S.%20%282016%29.%20Surface%20and%20interface%20states%20of%20Bi%26lt%3Bsub%26gt%3B2%26lt%3B%5C%2Fsub%26gt%3B%20Se%26lt%3Bsub%26gt%3B3%26lt%3B%5C%2Fsub%26gt%3B%20thin%20films%20investigated%20by%20optical%20second-harmonic%20generation%20and%20terahertz%20emission.%20%26lt%3Bi%26gt%3BApplied%20Physics%20Letters%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B108%26lt%3B%5C%2Fi%26gt%3B%285%29%2C%20051609.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.4941420%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.4941420%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Surface%20and%20interface%20states%20of%20Bi%3Csub%3E2%3C%5C%2Fsub%3E%20Se%3Csub%3E3%3C%5C%2Fsub%3E%20thin%20films%20investigated%20by%20optical%20second-harmonic%20generation%20and%20terahertz%20emission%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22S.%20Y.%22%2C%22lastName%22%3A%22Hamh%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22S.-H.%22%2C%22lastName%22%3A%22Park%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22S.-K.%22%2C%22lastName%22%3A%22Jerng%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22J.%20H.%22%2C%22lastName%22%3A%22Jeon%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22S.%20H.%22%2C%22lastName%22%3A%22Chun%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22J.%20H.%22%2C%22lastName%22%3A%22Jeon%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22S.%20J.%22%2C%22lastName%22%3A%22Kahng%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22K.%22%2C%22lastName%22%3A%22Yu%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22E.%20J.%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22S.%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22S.-H.%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22N.%22%2C%22lastName%22%3A%22Bansal%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22S.%22%2C%22lastName%22%3A%22Oh%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Joonbum%22%2C%22lastName%22%3A%22Park%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Byung-Woo%22%2C%22lastName%22%3A%22Kho%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jun%20Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22J.%20S.%22%2C%22lastName%22%3A%22Lee%22%7D%5D%2C%22abstractNote%22%3A%22%22%2C%22date%22%3A%2202%5C%2F2016%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1063%5C%2F1.4941420%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fpubs.aip.org%5C%2Faip%5C%2Fapl%5C%2Farticle%5C%2F133616%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220003-6951%2C%201077-3118%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A37%3A59Z%22%7D%7D%5D%7D
Kim, J., Park, S.-Y., Kim, S., Lee, D. H., Kim, J. H., Kim, J. M., Kang, H., Han, J.-S., Park, J. W., Lee, H., & Choi, S.-H. (2016). Precise and selective sensing of DNA-DNA hybridization by graphene/Si-nanowires diode-type biosensors. Scientific Reports, 6(1), 31984. https://doi.org/10.1038/srep31984
Lee, K. W., Jang, C. W., Shin, D. H., Kim, J. M., Kang, S. S., Lee, D. H., Kim, S., Choi, S.-H., & Hwang, E. (2016). Light-induced negative differential resistance in graphene/Si-quantum-dot tunneling diodes. Scientific Reports, 6(1), 30669. https://doi.org/10.1038/srep30669
Kim, S., Shin, D. H., Kim, J., Jang, C. W., Kang, S. S., Kim, J. M., Kim, J. H., Lee, D. H., Kim, J. H., Choi, S.-H., & Hwang, S. W. (2016). Energy transfer from an individual silica nanoparticle to graphene quantum dots and resulting enhancement of photodetector responsivity. Scientific Reports, 6(1), 27145. https://doi.org/10.1038/srep27145
Kim, S., Shin, D. H., Kim, J. H., Jang, C. W., Park, J. W., Lee, H., Choi, S.-H., Kim, S. H., Yee, K.-J., Bansal, N., & Oh, S. (2016). Resonance effects in thickness-dependent ultrafast carrier and phonon dynamics of topological insulator Bi2 Se3. Nanotechnology, 27(4), 045705. https://doi.org/10.1088/0957-4484/27/4/045705
Oh, S. D., Kim, J., Lee, D. H., Kim, J. H., Jang, C. W., Kim, S., & Choi, S.-H. (2016). Structural and optical characteristics of graphene quantum dots size-controlled and well-aligned on a large scale by polystyrene-nanosphere lithography. Journal of Physics D: Applied Physics, 49(2), 025308. https://doi.org/10.1088/0022-3727/49/2/025308
Hamh, S. Y., Park, S.-H., Jerng, S.-K., Jeon, J. H., Chun, S. H., Jeon, J. H., Kahng, S. J., Yu, K., Choi, E. J., Kim, S., Choi, S.-H., Bansal, N., Oh, S., Park, J., Kho, B.-W., Kim, J. S., & Lee, J. S. (2016). Surface and interface states of Bi2 Se3 thin films investigated by optical second-harmonic generation and terahertz emission. Applied Physics Letters, 108(5), 051609. https://doi.org/10.1063/1.4941420
2015
19376884
TCJXIC7M
2015
1
apa
50
date
desc
1442
https://nano.khu.ac.kr/wp-content/plugins/zotpress/
%7B%22status%22%3A%22success%22%2C%22updateneeded%22%3Afalse%2C%22instance%22%3Afalse%2C%22meta%22%3A%7B%22request_last%22%3A0%2C%22request_next%22%3A0%2C%22used_cache%22%3Atrue%7D%2C%22data%22%3A%5B%7B%22key%22%3A%22STAWQI8H%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Shin%20et%20al.%22%2C%22parsedDate%22%3A%222015-01-14%22%2C%22numChildren%22%3A2%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BShin%2C%20D.%20H.%2C%20Kim%2C%20S.%2C%20Kim%2C%20J.%20M.%2C%20Jang%2C%20C.%20W.%2C%20Kim%2C%20J.%20H.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282015%29.%20Clear%20manifestation%20of%20phonon%20anomaly%20in%20single-layer%20graphene%20by%20chemical%20%26lt%3Bi%26gt%3Bp%26lt%3B%5C%2Fi%26gt%3B%20-type%20doping.%20%26lt%3Bi%26gt%3BJournal%20of%20Physics%20D%3A%20Applied%20Physics%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B48%26lt%3B%5C%2Fi%26gt%3B%281%29%2C%20015304.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F0022-3727%5C%2F48%5C%2F1%5C%2F015304%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F0022-3727%5C%2F48%5C%2F1%5C%2F015304%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Clear%20manifestation%20of%20phonon%20anomaly%20in%20single-layer%20graphene%20by%20chemical%20%3Ci%3Ep%3C%5C%2Fi%3E%20-type%20doping%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22A%20phenomenon%20of%20phonon%20anomaly%20is%20clearly%20observed%20in%20single-layer%20graphene%20%28SG%29%20doped%20chemically%20with%20AuCl3%20by%20using%20electric%20field%20effect-induced%20Raman%20spectroscopy.%20The%20variations%20of%20G-mode%20frequency%20%5Cu03c9G%20and%20full-wave%20half-maximum%20%5Cu0393G%20in%20pristine%20graphene%20are%20asymmetric%20for%20positive%20and%20negative%20charging%2C%20but%20become%20more%20symmetric%20after%20the%20p-type%20doping%20due%20to%20the%20softening%20of%20the%20G%20band.%20The%20%5Cu0393G%20shows%20a%20steplike%20variation%20at%20doping%20concentrations%20of%2010%20and%2020%20mM%20because%20the%20AuCl3%20doping%20is%20uniformly%20done%2C%20thereby%20making%20the%20charge%20density%20of%20graphene%20uniformly%20distributed%2C%20consistent%20with%20theoretical%20expectation.%20A%20flat%20region%20of%20%5Cu03c9G%20between%20Fermi%20levels%20%3D%20%5Cu00b1%20%5Cu0127%5Cu03c9G%5C%2F2%2C%20instead%20of%20its%20two%20logarithmic%20divergences%20as%20theoretically%20expected%2C%20is%20observed%20even%20in%20doped%20SG.%20These%20results%20suggest%20that%20the%20observation%20of%20the%20phonon%20anomaly%20is%20facilitated%20due%20to%20the%20charge%20uniformity%20improved%20by%20the%20doping%20even%20though%20it%20is%20not%20enough%20to%20show%20such%20%5Cu03c9G%20divergences.%22%2C%22date%22%3A%222015-01-14%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1088%5C%2F0022-3727%5C%2F48%5C%2F1%5C%2F015304%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fiopscience.iop.org%5C%2Farticle%5C%2F10.1088%5C%2F0022-3727%5C%2F48%5C%2F1%5C%2F015304%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220022-3727%2C%201361-6463%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A37%3A17Z%22%7D%7D%2C%7B%22key%22%3A%22GKIMHM63%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Hamh%20et%20al.%22%2C%22parsedDate%22%3A%222015%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BHamh%2C%20S.%20Y.%2C%20Park%2C%20S.-H.%2C%20Han%2C%20J.%2C%20Jeon%2C%20J.%20H.%2C%20Kahng%2C%20S.-J.%2C%20Kim%2C%20S.%2C%20Choi%2C%20S.-H.%2C%20Bansal%2C%20N.%2C%20Oh%2C%20S.%2C%20Park%2C%20J.%2C%20Kim%2C%20J.%20S.%2C%20Kim%2C%20J.%20M.%2C%20Noh%2C%20D.%20Y.%2C%20%26amp%3B%20Lee%2C%20J.%20S.%20%282015%29.%20Anisotropic%20Terahertz%20Emission%20from%20Bi2Se3%20Thin%20Films%20with%20Inclined%20Crystal%20Planes.%20%26lt%3Bi%26gt%3BNanoscale%20Research%20Letters%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B10%26lt%3B%5C%2Fi%26gt%3B%281%29%2C%20489.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1186%5C%2Fs11671-015-1190-y%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1186%5C%2Fs11671-015-1190-y%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Anisotropic%20Terahertz%20Emission%20from%20Bi2Se3%20Thin%20Films%20with%20Inclined%20Crystal%20Planes%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sun%20Young%22%2C%22lastName%22%3A%22Hamh%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soon-Hee%22%2C%22lastName%22%3A%22Park%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jeongwoo%22%2C%22lastName%22%3A%22Han%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jeong%20Heum%22%2C%22lastName%22%3A%22Jeon%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Se-Jong%22%2C%22lastName%22%3A%22Kahng%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Namrata%22%2C%22lastName%22%3A%22Bansal%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seongshik%22%2C%22lastName%22%3A%22Oh%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Joonbum%22%2C%22lastName%22%3A%22Park%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jun%20Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jae%20Myung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Do%20Young%22%2C%22lastName%22%3A%22Noh%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Seok%22%2C%22lastName%22%3A%22Lee%22%7D%5D%2C%22abstractNote%22%3A%22We%20investigate%20the%20surface%20states%20of%20topological%20insulator%20%28TI%29%20Bi2Se3%20thin%20films%20grown%20on%20Si%20nanocrystals%20and%20Al2O3%20substrates%20by%20using%20terahertz%20%28THz%29%20emission%20spectroscopy.%20Compared%20to%20bulk%20crystalline%20Bi2Te2Se%2C%20film%20TIs%20exhibit%20distinct%20behaviors%20in%20the%20phase%20and%20amplitude%20of%20emitted%20THz%20radiation.%20In%20particular%2C%20Bi2Se3%20grown%20on%20Al2O3%20shows%20an%20anisotropic%20response%20with%20a%20strong%20modulation%20of%20the%20THz%20signal%20in%20its%20phase.%20From%20x-ray%20diffraction%2C%20we%20find%20that%20the%20crystal%20plane%20of%20the%20Bi2Se3%20films%20is%20inclined%20with%20respect%20to%20the%20plane%20of%20the%20Al2O3%20substrate%20by%20about%200.27%5Cu00b0.%20This%20structural%20anisotropy%20affects%20the%20dynamics%20of%20photocarriers%20and%20hence%20leads%20to%20the%20observed%20anisotropic%20response%20in%20the%20THz%20emission.%20Such%20relevance%20demonstrates%20that%20THz%20emission%20spectroscopy%20can%20be%20a%20sensitive%20tool%20to%20investigate%20the%20fine%20details%20of%20the%20surface%20crystallography%20and%20electrostatics%20of%20thin%20film%20TIs.%22%2C%22date%22%3A%2212%5C%2F2015%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1186%5C%2Fs11671-015-1190-y%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flink.springer.com%5C%2F10.1186%5C%2Fs11671-015-1190-y%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%221931-7573%2C%201556-276X%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A37%3A30Z%22%7D%7D%2C%7B%22key%22%3A%22MFX9ZY8D%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222015%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20S.%2C%20Shin%2C%20D.%20H.%2C%20Kim%2C%20C.%20O.%2C%20Kang%2C%20S.%20S.%2C%20Lee%2C%20K.%20W.%2C%20Kim%2C%20J.%2C%20Choi%2C%20S.-H.%2C%20%26amp%3B%20Hwang%2C%20S.%20W.%20%282015%29.%20Effect%20of%20nitrogen%20doping%20on%20the%20structural%20and%20the%20optical%20variations%20of%20graphene%20quantum%20dots%20by%20using%20hydrazine%20treatment.%20%26lt%3Bi%26gt%3BJournal%20of%20the%20Korean%20Physical%20Society%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B67%26lt%3B%5C%2Fi%26gt%3B%284%29%2C%20746%26%23x2013%3B751.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.3938%5C%2Fjkps.67.746%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.3938%5C%2Fjkps.67.746%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Effect%20of%20nitrogen%20doping%20on%20the%20structural%20and%20the%20optical%20variations%20of%20graphene%20quantum%20dots%20by%20using%20hydrazine%20treatment%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chang%20Oh%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soo%20Seok%22%2C%22lastName%22%3A%22Kang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Kyeong%20Won%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jungkil%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%20Won%22%2C%22lastName%22%3A%22Hwang%22%7D%5D%2C%22abstractNote%22%3A%22%22%2C%22date%22%3A%228%5C%2F2015%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.3938%5C%2Fjkps.67.746%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22http%3A%5C%2F%5C%2Flink.springer.com%5C%2F10.3938%5C%2Fjkps.67.746%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220374-4884%2C%201976-8524%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A37%3A28Z%22%7D%7D%2C%7B%22key%22%3A%22AG3KPR4S%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222015%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20J.%20H.%2C%20Kim%2C%20J.%2C%20Oh%2C%20S.%20D.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282015%29.%20Sequential%20structural%20and%20optical%20evolution%20of%20MoS2%20by%20chemical%20synthesis%20and%20exfoliation.%20%26lt%3Bi%26gt%3BJournal%20of%20the%20Korean%20Physical%20Society%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B66%26lt%3B%5C%2Fi%26gt%3B%2812%29%2C%201852%26%23x2013%3B1855.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.3938%5C%2Fjkps.66.1852%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.3938%5C%2Fjkps.66.1852%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Sequential%20structural%20and%20optical%20evolution%20of%20MoS2%20by%20chemical%20synthesis%20and%20exfoliation%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jungkil%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Si%20Duck%22%2C%22lastName%22%3A%22Oh%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22%22%2C%22date%22%3A%226%5C%2F2015%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.3938%5C%2Fjkps.66.1852%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22http%3A%5C%2F%5C%2Flink.springer.com%5C%2F10.3938%5C%2Fjkps.66.1852%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220374-4884%2C%201976-8524%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A37%3A24Z%22%7D%7D%2C%7B%22key%22%3A%22T39NBSA3%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Shin%20et%20al.%22%2C%22parsedDate%22%3A%222015%22%2C%22numChildren%22%3A2%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BShin%2C%20D.%20H.%2C%20Kim%2C%20S.%2C%20Kim%2C%20J.%20M.%2C%20Jang%2C%20C.%20W.%2C%20Kim%2C%20J.%20H.%2C%20Lee%2C%20K.%20W.%2C%20Kim%2C%20J.%2C%20Oh%2C%20S.%20D.%2C%20Lee%2C%20D.%20H.%2C%20Kang%2C%20S.%20S.%2C%20Kim%2C%20C.%20O.%2C%20Choi%2C%20S.%2C%20%26amp%3B%20Kim%2C%20K.%20J.%20%282015%29.%20Graphene%5C%2FSi%26%23x2010%3BQuantum%26%23x2010%3BDot%20Heterojunction%20Diodes%20Showing%20High%20Photosensitivity%20Compatible%20with%20Quantum%20Confinement%20Effect.%20%26lt%3Bi%26gt%3BAdvanced%20Materials%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B27%26lt%3B%5C%2Fi%26gt%3B%2816%29%2C%202614%26%23x2013%3B2620.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1002%5C%2Fadma.201500040%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1002%5C%2Fadma.201500040%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Graphene%5C%2FSi%5Cu2010Quantum%5Cu2010Dot%20Heterojunction%20Diodes%20Showing%20High%20Photosensitivity%20Compatible%20with%20Quantum%20Confinement%20Effect%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Kyeong%20Won%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jungkil%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Si%20Duck%22%2C%22lastName%22%3A%22Oh%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dae%20Hun%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soo%20Seok%22%2C%22lastName%22%3A%22Kang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chang%20Oh%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk%5Cu2010Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Kyung%20Joong%22%2C%22lastName%22%3A%22Kim%22%7D%5D%2C%22abstractNote%22%3A%22%22%2C%22date%22%3A%2204%5C%2F2015%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1002%5C%2Fadma.201500040%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fadvanced.onlinelibrary.wiley.com%5C%2Fdoi%5C%2F10.1002%5C%2Fadma.201500040%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220935-9648%2C%201521-4095%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A37%3A21Z%22%7D%7D%2C%7B%22key%22%3A%229ALQD6MC%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Jang%20et%20al.%22%2C%22parsedDate%22%3A%222015%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BJang%2C%20C.%20W.%2C%20Kim%2C%20J.%20M.%2C%20Kim%2C%20J.%20H.%2C%20Shin%2C%20D.%20H.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282015%29.%20Degradation%20reduction%20and%20stability%20enhancement%20of%20p-type%20graphene%20by%20RhCl3%20doping.%20%26lt%3Bi%26gt%3BJournal%20of%20Alloys%20and%20Compounds%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B621%26lt%3B%5C%2Fi%26gt%3B%2C%201%26%23x2013%3B6.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.jallcom.2014.09.182%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.jallcom.2014.09.182%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Degradation%20reduction%20and%20stability%20enhancement%20of%20p-type%20graphene%20by%20RhCl3%20doping%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Three%20dopants%2C%20HNO3%2C%20AuCl3%2C%20and%20RhCl3%20have%20been%20employed%20to%20fabricate%20p-type%20graphene%20layers%20with%20varying%20doping%20concentration%20and%20subsequently%20compare%20their%20structural%2C%20optical%2C%20and%20electrical%20properties.%20By%20RhCl3%20doping%2C%20the%20sheet%20resistance%20is%20most%20stable%20as%20time%20elapses%20and%20the%20Raman%20frequency%5C%2Fwork%20function%20%28thus%20Dirac%20point%29%20are%20most%20doping-sensitive%20without%20big%20degradation%20of%20transmittance%20and%20hole%20mobility.%20The%20C%40C%5C%2FCAC%20bonds%20intensity%20ratio%20%28IC%40C%5C%2FICAC%29%20in%20the%20C%201s%20X-ray%20photoelectron%20spectra%20increases%20in%20all%20doped%20samples%20with%20the%20change%20being%20largest%20by%20RhCl3%20doping%2C%20another%20evidence%20for%20the%20p-type%20doping%20by%20electron%20transfer%20from%20graphene%20sheets%20to%20the%20adsorbates.%20The%20largest%20IC%40C%5C%2FICAC%20ratio%20may%20indicate%20the%20C%20atoms%20are%20most%20fully%20double-bonded%20even%20though%20a%20lot%20of%20electrons%20are%20leaked%20out%20from%20graphene%2C%20thereby%20making%20the%20graphene%20layer%20least%20defective%2C%20consistent%20with%20the%20minimized%20reduction%20of%20the%20transmittance%20and%20the%20hole%20mobility%20by%20RhCl3%20doping.%22%2C%22date%22%3A%2202%5C%2F2015%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.jallcom.2014.09.182%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS092583881402355X%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2209258388%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A37%3A19Z%22%7D%7D%2C%7B%22key%22%3A%22EWQFKU42%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Jang%20et%20al.%22%2C%22parsedDate%22%3A%222015%22%2C%22numChildren%22%3A12%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BJang%2C%20S.%2C%20Joo%2C%20B.%20S.%2C%20Kim%2C%20S.%2C%20Kong%2C%20K.%2C%20Chang%2C%20H.%2C%20Yu%2C%20B.%20D.%2C%20%26amp%3B%20Han%2C%20M.%20%282015%29.%20Effects%20of%20proton%20irradiation%20on%20Si-nanocrystal%5C%2FSiO%26lt%3Bsub%26gt%3B2%26lt%3B%5C%2Fsub%26gt%3B%20multilayers%3A%20study%20of%20photoluminescence%20and%20first-principles%20calculations.%20%26lt%3Bi%26gt%3BJournal%20of%20Materials%20Chemistry%20C%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B3%26lt%3B%5C%2Fi%26gt%3B%2833%29%2C%208574%26%23x2013%3B8581.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1039%5C%2FC5TC01464F%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1039%5C%2FC5TC01464F%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Effects%20of%20proton%20irradiation%20on%20Si-nanocrystal%5C%2FSiO%3Csub%3E2%3C%5C%2Fsub%3E%20multilayers%3A%20study%20of%20photoluminescence%20and%20first-principles%20calculations%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seunghun%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Beom%20Soo%22%2C%22lastName%22%3A%22Joo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ki-jeong%22%2C%22lastName%22%3A%22Kong%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Hyunju%22%2C%22lastName%22%3A%22Chang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Byung%20Deok%22%2C%22lastName%22%3A%22Yu%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Moonsup%22%2C%22lastName%22%3A%22Han%22%7D%5D%2C%22abstractNote%22%3A%22The%20investigation%20of%20photoluminescence%20and%20first-principles%20calculations%20clarifies%20the%20relationship%20between%20the%20hydrogen%20passivation%20of%20N%20at%20the%20interface%20and%20the%20observed%20band%20gap%20reduction%20of%20the%20embedded%20Si%20nanocrystal%20%28NC%29%20for%20Si%20NC%5C%2FSiO%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20multilayers%20containing%20interfacial%20nitrogens%20after%20proton%20irradiation.%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%5Cn%20%20%20%20%20%20%20%20%20%20%2C%20%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20Si%20nanocrystal%20%28NC%29%5C%2FSiO%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20multilayers%20containing%20interfacial%20nitrogens%20are%20formed%20by%20radiofrequency%20magnetron-sputtering%20and%20post-annealing.%20By%20analyzing%20the%20photoluminescence%20%28PL%29%20of%20the%20multilayer%20structures%20after%20proton%20irradiation%20%28PI%29%2C%20we%20found%20that%20the%20peak%20at%20%5Cu223c740%20nm%20was%20shifted%20toward%20shorter%20wavelengths%20and%20that%20its%20intensity%20was%20considerably%20suppressed.%20Furthermore%2C%20a%20new%20peak%20simultaneously%20appeared%20at%20%5Cu223c500%20nm.%20We%20interpret%20that%20PI%20not%20only%20modifies%20the%20shapes%20of%20the%20Si%20NCs%20and%20generate%20defects%20at%20the%20NC%5C%2FSiO%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20interface%2C%20but%20also%20induces%20simultaneously%20hydrogen%20passivation%20%28HP%29%20of%20interfacial%20nitrogens%20due%20to%20the%20attenuated%20protons.%20To%20investigate%20the%20relationship%20between%20the%20HP%20of%20N%20at%20the%20Si%20NC%5C%2FSiO%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20interface%20and%20the%20observed%20band%20gap%20reduction%20of%20Si%20NC%20structures%20within%20the%20SiO%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20matrix%2C%20we%20modeled%20the%20atomic%20configurations%20at%20the%20interface%20and%20applied%20first-principles%20calculations.%20The%20results%20clearly%20indicate%20that%20the%20HP%20of%20composite%20structures%20containing%20Si%5Cu2013N%20bonds%20at%20the%20Si%20NC%5C%2FSiO%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20interface%20induces%20the%20blue-shift%20in%20PL.%20We%20expect%20that%20this%20investigation%20helps%20to%20pave%20the%20way%20for%20developing%20more%20efficient%20Si-based%20light%20emitting%20devices%20or%20solar%20cells.%22%2C%22date%22%3A%222015%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1039%5C%2FC5TC01464F%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fxlink.rsc.org%5C%2F%3FDOI%3DC5TC01464F%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%222050-7526%2C%202050-7534%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A37%3A26Z%22%7D%7D%5D%7D
Shin, D. H., Kim, S., Kim, J. M., Jang, C. W., Kim, J. H., & Choi, S.-H. (2015). Clear manifestation of phonon anomaly in single-layer graphene by chemical p -type doping. Journal of Physics D: Applied Physics, 48(1), 015304. https://doi.org/10.1088/0022-3727/48/1/015304
Hamh, S. Y., Park, S.-H., Han, J., Jeon, J. H., Kahng, S.-J., Kim, S., Choi, S.-H., Bansal, N., Oh, S., Park, J., Kim, J. S., Kim, J. M., Noh, D. Y., & Lee, J. S. (2015). Anisotropic Terahertz Emission from Bi2Se3 Thin Films with Inclined Crystal Planes. Nanoscale Research Letters, 10(1), 489. https://doi.org/10.1186/s11671-015-1190-y
Kim, S., Shin, D. H., Kim, C. O., Kang, S. S., Lee, K. W., Kim, J., Choi, S.-H., & Hwang, S. W. (2015). Effect of nitrogen doping on the structural and the optical variations of graphene quantum dots by using hydrazine treatment. Journal of the Korean Physical Society, 67(4), 746–751. https://doi.org/10.3938/jkps.67.746
Kim, J. H., Kim, J., Oh, S. D., Kim, S., & Choi, S.-H. (2015). Sequential structural and optical evolution of MoS2 by chemical synthesis and exfoliation. Journal of the Korean Physical Society, 66(12), 1852–1855. https://doi.org/10.3938/jkps.66.1852
Shin, D. H., Kim, S., Kim, J. M., Jang, C. W., Kim, J. H., Lee, K. W., Kim, J., Oh, S. D., Lee, D. H., Kang, S. S., Kim, C. O., Choi, S., & Kim, K. J. (2015). Graphene/Si‐Quantum‐Dot Heterojunction Diodes Showing High Photosensitivity Compatible with Quantum Confinement Effect. Advanced Materials, 27(16), 2614–2620. https://doi.org/10.1002/adma.201500040
Jang, C. W., Kim, J. M., Kim, J. H., Shin, D. H., Kim, S., & Choi, S.-H. (2015). Degradation reduction and stability enhancement of p-type graphene by RhCl3 doping. Journal of Alloys and Compounds, 621, 1–6. https://doi.org/10.1016/j.jallcom.2014.09.182
Jang, S., Joo, B. S., Kim, S., Kong, K., Chang, H., Yu, B. D., & Han, M. (2015). Effects of proton irradiation on Si-nanocrystal/SiO2 multilayers: study of photoluminescence and first-principles calculations. Journal of Materials Chemistry C, 3(33), 8574–8581. https://doi.org/10.1039/C5TC01464F
2014
19376884
TCJXIC7M
2014
1
apa
50
date
desc
1442
https://nano.khu.ac.kr/wp-content/plugins/zotpress/
%7B%22status%22%3A%22success%22%2C%22updateneeded%22%3Afalse%2C%22instance%22%3Afalse%2C%22meta%22%3A%7B%22request_last%22%3A0%2C%22request_next%22%3A0%2C%22used_cache%22%3Atrue%7D%2C%22data%22%3A%5B%7B%22key%22%3A%22R5YLFGBS%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222014-12-10%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20J.%2C%20Joo%2C%20S.%20S.%2C%20Lee%2C%20K.%20W.%2C%20Kim%2C%20J.%20H.%2C%20Shin%2C%20D.%20H.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282014%29.%20Near-Ultraviolet-Sensitive%20Graphene%5C%2FPorous%20Silicon%20Photodetectors.%20%26lt%3Bi%26gt%3BACS%20Applied%20Materials%20%26amp%3B%20Interfaces%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B6%26lt%3B%5C%2Fi%26gt%3B%2823%29%2C%2020880%26%23x2013%3B20886.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1021%5C%2Fam5053812%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1021%5C%2Fam5053812%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Near-Ultraviolet-Sensitive%20Graphene%5C%2FPorous%20Silicon%20Photodetectors%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jungkil%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soong%20Sin%22%2C%22lastName%22%3A%22Joo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Kyeong%20Won%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Porous%20silicon%20%28PSi%29%20is%20recognized%20as%20an%20attractive%20building%20block%20for%20photonic%20devices%20because%20of%20its%20novel%20properties%20including%20high%20ratio%20of%20surface%20to%20volume%20and%20high%20light%20absorption.%20We%20%5Cufb01rst%20report%20near-ultraviolet%20%28UV%29-sensitive%20graphene%5C%2FPSi%20photodetectors%20%28PDs%29%20fabricated%20by%20utilizing%20graphene%20and%20PSi%20as%20a%20carrier%20collector%20and%20a%20photoexcitation%20layer%2C%20respectively.%20Thanks%20to%20high%20light%20absorption%20and%20enlarged%20energy-band%20gap%20of%20PSi%2C%20the%20responsivity%20%28Ri%29%20and%20quantum%20e%5Cufb03ciency%20%28QE%29%20of%20the%20PDs%20are%20markedly%20enhanced%20in%20the%20near-UV%20range.%20The%20performances%20of%20PDs%20are%20systemically%20studied%20for%20various%20porosities%20of%20PSi%2C%20controlled%20by%20varying%20the%20electrolessdeposition%20time%20%28td%29%20of%20Ag%20nanoparticles%20for%20the%20use%20of%20Si%20etching.%20Largest%20gain%20is%20obtained%20at%20td%20%3D%203%20s%2C%20consistent%20with%20the%20maximal%20enhancement%20of%20Ri%20and%20QE%20in%20the%20near%20UV%20range%2C%20which%20originates%20from%20the%20well-de%5Cufb01ned%20interface%20at%20the%20graphene%5C%2FPSi%20junction%2C%20as%20proved%20by%20atomic-%20and%20electrostatic-force%20microscopies.%20Optimized%20response%20speed%20is%20%5Cu223c10%20times%20faster%20compared%20to%20graphene%5C%2Fsingle-crystalline%20Si%20PDs.%20These%20and%20other%20unique%20PD%20characteristics%20prove%20to%20be%20governed%20by%20typical%20Schottky%20diode-like%20transport%20of%20charge%20carriers%20at%20the%20graphene%5C%2F%20PSi%20junctions%2C%20based%20on%20bias-dependent%20variations%20of%20the%20band%20pro%5Cufb01les%2C%20resulting%20in%20novel%20dark-%20and%20photocurrent%20behaviors.%22%2C%22date%22%3A%222014-12-10%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1021%5C%2Fam5053812%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fpubs.acs.org%5C%2Fdoi%5C%2F10.1021%5C%2Fam5053812%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%221944-8244%2C%201944-8252%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A36%3A20Z%22%7D%7D%2C%7B%22key%22%3A%22IFHNQSPT%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Park%20et%20al.%22%2C%22parsedDate%22%3A%222014-11-14%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BPark%2C%20J.%20W.%2C%20So%2C%20H.%20S.%2C%20Kim%2C%20S.%2C%20Choi%2C%20S.-H.%2C%20Lee%2C%20H.%2C%20Lee%2C%20J.%2C%20Lee%2C%20C.%2C%20%26amp%3B%20Kim%2C%20Y.%20%282014%29.%20Optical%20properties%20of%20large-area%20ultrathin%20MoS2%20films%3A%20Evolution%20from%20a%20single%20layer%20to%20multilayers.%20%26lt%3Bi%26gt%3BJournal%20of%20Applied%20Physics%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B116%26lt%3B%5C%2Fi%26gt%3B%2818%29%2C%20183509.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.4901464%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.4901464%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Optical%20properties%20of%20large-area%20ultrathin%20MoS2%20films%3A%20Evolution%20from%20a%20single%20layer%20to%20multilayers%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jun%20Woo%22%2C%22lastName%22%3A%22Park%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Hyeon%20Seob%22%2C%22lastName%22%3A%22So%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Hosun%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jinhwan%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Changgu%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Youngchan%22%2C%22lastName%22%3A%22Kim%22%7D%5D%2C%22abstractNote%22%3A%22We%20investigated%20the%20optical%20properties%20of%20ultrathin%20MoS2%20films%20%28number%20of%20layers%3A%20N%5Cu2009%3D%5Cu20091%2C%202%2C%204%2C%20and%2012%29%20using%20Raman%20spectroscopy%2C%20photoluminescence%20%28PL%29%20spectroscopy%2C%20and%20spectroscopic%20ellipsometry.%20We%20estimated%20the%20layer%20thicknesses%20based%20on%20Raman%20spectra.%20We%20characterized%20the%20microstructural%20properties%20of%20a%20single-layer%20MoS2%20film%20using%20atomic%20force%20microscopy.%20We%20measured%20the%20lowest-energy%20A%20and%20B%20excitons%20using%20PL%20spectroscopy.%20We%20measured%20the%20ellipsometric%20angles%20%28%5Cu03a8%20and%20%5Cu0394%29%20of%20MoS2%20thin%20films%20using%20spectroscopic%20ellipsometry%2C%20and%20obtained%20the%20dielectric%20functions%20as%20the%20films%26%23039%3B%20thickness%20changed%20from%20a%20single%20layer%20to%20multi-layers.%20We%20determined%20the%20films%26%23039%3B%20optical%20gap%20energies%20from%20the%20absorption%20coefficients.%20Applying%20the%20standard%20critical%20point%20model%20to%20the%20second%20derivative%20of%20the%20dielectric%20function%20%28d2%5Cu03b5%28E%29%5C%2FdE2%29%2C%20we%20determined%20several%20critical%20point%20energies.%20The%20d2%5Cu03b5%28E%29%5C%2FdE2%20spectra%20showed%20doublet%20peaks%20around%203%5Cu2009eV%20corresponding%20to%20the%20C%20and%20D%20transitions%2C%20as%20well%20as%20doublet%20peaks%20around%202%5Cu2009eV%20corresponding%20to%20the%20A%20and%20B%20transitions.%20These%20doublet%20structures%20at%203%5Cu2009eV%20are%20attributed%20to%20the%20transitions%20in%20the%20Brillouin%20zone%20between%20the%20%5Cu0393%20and%20K%20points.%22%2C%22date%22%3A%222014-11-14%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1063%5C%2F1.4901464%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fpubs.aip.org%5C%2Fjap%5C%2Farticle%5C%2F116%5C%2F18%5C%2F183509%5C%2F992403%5C%2FOptical-properties-of-large-area-ultrathin-MoS2%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220021-8979%2C%201089-7550%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A36%3A18Z%22%7D%7D%2C%7B%22key%22%3A%22EU2DVR6X%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222014-07-07%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20C.%20O.%2C%20Hwang%2C%20S.%20W.%2C%20Kim%2C%20S.%2C%20Shin%2C%20D.%20H.%2C%20Kang%2C%20S.%20S.%2C%20Kim%2C%20J.%20M.%2C%20Jang%2C%20C.%20W.%2C%20Kim%2C%20J.%20H.%2C%20Lee%2C%20K.%20W.%2C%20Choi%2C%20S.-H.%2C%20%26amp%3B%20Hwang%2C%20E.%20%282014%29.%20High-performance%20graphene-quantum-dot%20photodetectors.%20%26lt%3Bi%26gt%3BScientific%20Reports%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B4%26lt%3B%5C%2Fi%26gt%3B%281%29%2C%205603.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1038%5C%2Fsrep05603%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1038%5C%2Fsrep05603%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22High-performance%20graphene-quantum-dot%20photodetectors%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chang%20Oh%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%20Won%22%2C%22lastName%22%3A%22Hwang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soo%20Seok%22%2C%22lastName%22%3A%22Kang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Kyeong%20Won%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Euyheon%22%2C%22lastName%22%3A%22Hwang%22%7D%5D%2C%22abstractNote%22%3A%22%22%2C%22date%22%3A%222014-07-07%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1038%5C%2Fsrep05603%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fwww.nature.com%5C%2Farticles%5C%2Fsrep05603%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%222045-2322%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A36%3A41Z%22%7D%7D%2C%7B%22key%22%3A%22K92EHUPA%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Sin%20Joo%20et%20al.%22%2C%22parsedDate%22%3A%222014-06-27%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BSin%20Joo%2C%20S.%2C%20Kim%2C%20J.%2C%20Seok%20Kang%2C%20S.%2C%20Kim%2C%20S.%2C%20Choi%2C%20S.-H.%2C%20%26amp%3B%20Won%20Hwang%2C%20S.%20%282014%29.%20Graphene-quantum-dot%20nonvolatile%20charge-trap%20flash%20memories.%20%26lt%3Bi%26gt%3BNanotechnology%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B25%26lt%3B%5C%2Fi%26gt%3B%2825%29%2C%20255203.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F0957-4484%5C%2F25%5C%2F25%5C%2F255203%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F0957-4484%5C%2F25%5C%2F25%5C%2F255203%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Graphene-quantum-dot%20nonvolatile%20charge-trap%20flash%20memories%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soong%22%2C%22lastName%22%3A%22Sin%20Joo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jungkil%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soo%22%2C%22lastName%22%3A%22Seok%20Kang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Won%20Hwang%22%7D%5D%2C%22abstractNote%22%3A%22Nonvolatile%20%5Cufb02ash-memory%20capacitors%20containing%20graphene%20quantum%20dots%20%28GQDs%29%20of%206%2C%2012%2C%20and%2027%20nm%20average%20sizes%20%28d%29%20between%20SiO2%20layers%20for%20use%20as%20charge%20traps%20have%20been%20prepared%20by%20sequential%20processes%3A%20ion-beam%20sputtering%20deposition%20%28IBSD%29%20of%2010%20nm%20SiO2%20on%20a%20p-type%20wafer%2C%20spin-coating%20of%20GQDs%20on%20the%20SiO2%20layer%2C%20and%20IBSD%20of%2020%20nm%20SiO2%20on%20the%20GQD%20layer.%20The%20presence%20of%20almost%20a%20single%20array%20of%20GQDs%20at%20a%20distance%20of%20%5Cu223c13%20nm%20from%20the%20SiO2%5C%2FSi%20wafer%20interface%20is%20con%5Cufb01rmed%20by%20transmission%20electron%20microscopy%20and%20photoluminescence.%20The%20memory%20window%20estimated%20by%20capacitance%5Cu2013voltage%20curves%20is%20proportional%20to%20d%20for%20sweep%20voltages%20wider%20than%20%5Cu00b1%203%20V%2C%20and%20for%20d%20%3D%2027%20nm%20the%20GQD%20memories%20show%20a%20maximum%20memory%20window%20of%208%20V%20at%20a%20sweep%20voltage%20of%20%5Cu00b1%2010%20V.%20The%20program%20and%20erase%20speeds%20are%20largest%20at%20d%20%3D%2012%20and%2027%20nm%2C%20respectively%2C%20and%20the%20endurance%20and%20data-retention%20properties%20are%20the%20best%20at%20d%20%3D%2027%20nm.%20These%20memory%20behaviors%20can%20be%20attributed%20to%20combined%20effects%20of%20edge%20state%20and%20quantum%20con%5Cufb01nement.%22%2C%22date%22%3A%222014-06-27%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1088%5C%2F0957-4484%5C%2F25%5C%2F25%5C%2F255203%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fiopscience.iop.org%5C%2Farticle%5C%2F10.1088%5C%2F0957-4484%5C%2F25%5C%2F25%5C%2F255203%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220957-4484%2C%201361-6528%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A36%3A13Z%22%7D%7D%2C%7B%22key%22%3A%22RNENCXXZ%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222014-06-20%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20J.%2C%20Oh%2C%20S.%20D.%2C%20Kim%2C%20J.%20H.%2C%20Shin%2C%20D.%20H.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282014%29.%20Graphene%5C%2FSi-nanowire%20heterostructure%20molecular%20sensors.%20%26lt%3Bi%26gt%3BScientific%20Reports%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B4%26lt%3B%5C%2Fi%26gt%3B%281%29%2C%205384.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1038%5C%2Fsrep05384%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1038%5C%2Fsrep05384%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Graphene%5C%2FSi-nanowire%20heterostructure%20molecular%20sensors%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jungkil%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Si%20Duk%22%2C%22lastName%22%3A%22Oh%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22%22%2C%22date%22%3A%222014-06-20%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1038%5C%2Fsrep05384%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fwww.nature.com%5C%2Farticles%5C%2Fsrep05384%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%222045-2322%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A36%3A15Z%22%7D%7D%2C%7B%22key%22%3A%22VX3NQAMP%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Shin%20et%20al.%22%2C%22parsedDate%22%3A%222014-03-28%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BShin%2C%20D.%20H.%2C%20Lee%2C%20K.%20W.%2C%20Lee%2C%20J.%20S.%2C%20Kim%2C%20J.%20H.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282014%29.%20Enhancement%20of%20the%20effectiveness%20of%20graphene%20as%20a%20transparent%20conductive%20electrode%20by%20AgNO%26lt%3Bsub%26gt%3B3%26lt%3B%5C%2Fsub%26gt%3B%20doping.%20%26lt%3Bi%26gt%3BNanotechnology%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B25%26lt%3B%5C%2Fi%26gt%3B%2812%29%2C%20125701.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F0957-4484%5C%2F25%5C%2F12%5C%2F125701%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F0957-4484%5C%2F25%5C%2F12%5C%2F125701%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Enhancement%20of%20the%20effectiveness%20of%20graphene%20as%20a%20transparent%20conductive%20electrode%20by%20AgNO%3Csub%3E3%3C%5C%2Fsub%3E%20doping%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Kyeong%20Won%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jae%20Sung%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Single-layer%20graphene%20sheets%20have%20been%20synthesized%20by%20using%20chemical%20vapor%20deposition%2C%20and%20subsequently%20doped%20with%20AgNO3%20at%20various%20doping%20concentrations%20%28nD%29%20from%205%20to%2050%20mM.%20Atomic%20force%20microscopy%20and%20%5Cufb01eld%20emission%20scanning%20electron%20microscopy%20images%20reveal%20the%20formation%20of%20%5Cu223c10%5Cu2013100%20nm%20Ag%20particles%20on%20the%20graphene%20surface%20after%20doping.%20The%20type%20of%20n%20doping%20is%20con%5Cufb01rmed%20by%20analyzing%20the%20nD-dependent%20behaviors%20of%20Raman%20scattering%20and%20the%20work%20function%20of%20the%20doped%20graphene%20%5Cufb01lms.%20The%20sheet%20resistance%20monotonically%20decreases%20to%20%5Cu223c173%20%5C%2Fsq%20with%20the%20increase%20of%20nD%20to%2050%20mM%2C%20and%20the%20transmittance%20is%20reduced%20by%20only%20about%203%25%20for%20the%20highest%20nD.%20At%20nD%20%3D%2010%20mM%20optimized%20doped%20graphene%20layers%20with%20a%20sheet%20resistance%20of%20202%20%5C%2Fsq%20and%20a%20transmittance%20of%2096%25%20are%20obtained%2C%20resulting%20in%20a%20maximum%20DC%20conductivity%5C%2Foptical%20conductivity%20ratio%20%28%5Cu03c3DC%5C%2F%5Cu03c3OP%29%20of%20%5Cu223c45.5%2C%20much%20larger%20than%20the%20minimum%20industry%20standard%20%28%5Cu03c3DC%5C%2F%5Cu03c3OP%20%3D%20%5Cu223c35%29%20for%20transparent%20conductive%20electrodes.%22%2C%22date%22%3A%222014-03-28%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1088%5C%2F0957-4484%5C%2F25%5C%2F12%5C%2F125701%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fiopscience.iop.org%5C%2Farticle%5C%2F10.1088%5C%2F0957-4484%5C%2F25%5C%2F12%5C%2F125701%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220957-4484%2C%201361-6528%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A36%3A07Z%22%7D%7D%2C%7B%22key%22%3A%22NUBARI6R%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222014-02-12%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20C.%20O.%2C%20Kim%2C%20S.%2C%20Shin%2C%20D.%20H.%2C%20Kang%2C%20S.%20S.%2C%20Kim%2C%20J.%20M.%2C%20Jang%2C%20C.%20W.%2C%20Joo%2C%20S.%20S.%2C%20Lee%2C%20J.%20S.%2C%20Kim%2C%20J.%20H.%2C%20Choi%2C%20S.-H.%2C%20%26amp%3B%20Hwang%2C%20E.%20%282014%29.%20High%20photoresponsivity%20in%20an%20all-graphene%20p%26%23x2013%3Bn%20vertical%20junction%20photodetector.%20%26lt%3Bi%26gt%3BNature%20Communications%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B5%26lt%3B%5C%2Fi%26gt%3B%281%29%2C%203249.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1038%5C%2Fncomms4249%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1038%5C%2Fncomms4249%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22High%20photoresponsivity%20in%20an%20all-graphene%20p%5Cu2013n%20vertical%20junction%20photodetector%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chang%20Oh%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soo%20Seok%22%2C%22lastName%22%3A%22Kang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soong%20Sin%22%2C%22lastName%22%3A%22Joo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jae%20Sung%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Euyheon%22%2C%22lastName%22%3A%22Hwang%22%7D%5D%2C%22abstractNote%22%3A%22%22%2C%22date%22%3A%222014-02-12%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1038%5C%2Fncomms4249%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fwww.nature.com%5C%2Farticles%5C%2Fncomms4249%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%222041-1723%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A36%3A53Z%22%7D%7D%2C%7B%22key%22%3A%22QLI3DWSP%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Shin%20et%20al.%22%2C%22parsedDate%22%3A%222014%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BShin%2C%20D.%20H.%2C%20Kim%2C%20S.%2C%20Jang%2C%20C.%20W.%2C%20Kim%2C%20J.%20M.%2C%20Kim%2C%20J.%20H.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282014%29.%20In-situ%20monitoring%20of%20AuCl3-doping%20and%20-dedoping%20behaviors%20in%20graphene.%20%26lt%3Bi%26gt%3BJournal%20of%20the%20Korean%20Physical%20Society%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B64%26lt%3B%5C%2Fi%26gt%3B%289%29%2C%201327%26%23x2013%3B1330.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.3938%5C%2Fjkps.64.1327%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.3938%5C%2Fjkps.64.1327%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22In-situ%20monitoring%20of%20AuCl3-doping%20and%20-dedoping%20behaviors%20in%20graphene%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22%22%2C%22date%22%3A%225%5C%2F2014%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.3938%5C%2Fjkps.64.1327%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22http%3A%5C%2F%5C%2Flink.springer.com%5C%2F10.3938%5C%2Fjkps.64.1327%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220374-4884%2C%201976-8524%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A36%3A12Z%22%7D%7D%2C%7B%22key%22%3A%22WZCVZ7GZ%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kang%20et%20al.%22%2C%22parsedDate%22%3A%222014%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKang%2C%20S.%20S.%2C%20Joo%2C%20S.%20S.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282014%29.%20Effect%20of%20size%20variation%20on%20the%20cathodoluminescence%20characteristics%20of%20graphene%20quantum%20dots.%20%26lt%3Bi%26gt%3BCurrent%20Applied%20Physics%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B14%26lt%3B%5C%2Fi%26gt%3B%2C%20S111%26%23x2013%3BS114.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.cap.2013.11.012%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.cap.2013.11.012%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Effect%20of%20size%20variation%20on%20the%20cathodoluminescence%20characteristics%20of%20graphene%20quantum%20dots%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soo%20Seok%22%2C%22lastName%22%3A%22Kang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soong%20Sin%22%2C%22lastName%22%3A%22Joo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Cathodoluminescence%20%28CL%29%20has%20been%20studied%20in%20graphene%20quantum%20dots%20%28GQDs%29%20by%20varying%20their%20average%20size%20%28d%29%20from%205%20to%2035%20nm.%20The%20size%20dependence%20of%20CL%20peak%20wavelength%20is%20very%20analogous%20to%20that%20of%20photoluminescence%20%28PL%29%20peak%20wavelength%20unusually%20showing%20non-monotonic%20behaviors%20having%20a%20maximum%20at%20d%20%5Cu00bc%20w17%20nm.%20The%20CL%20behaviors%20can%20therefore%20be%20attributed%20to%20the%20novel%20feature%20of%20GQDs%2C%20i.e.%2C%20the%20circular-to-polygonal-shape%20and%20corresponding%20edge-state%20variations%20of%20GQDs%20at%20d%20%5Cu00bc%20w17%20nm%20as%20d%20increases.%20However%2C%20the%20peak%20wavelengths%20of%20CL%20are%20especially%20much%20smaller%20than%20those%20of%20PL%20at%20both%20ends%20in%20the%20size%20range%20of%20GQDs%2C%20possibly%20resulting%20from%20the%20recombination%20of%20the%20electron-beam-excited%20e-h%20pairs%20at%20higher%20energy%20states%20before%20thermalization%20due%20to%20fast%20carrier-carrier%20scattering%20dominating%20over%20electron-phonon%20scattering%20in%20graphene.%22%2C%22date%22%3A%2203%5C%2F2014%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.cap.2013.11.012%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS1567173913003830%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2215671739%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A36%3A09Z%22%7D%7D%2C%7B%22key%22%3A%229G3AFCSJ%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Lee%20et%20al.%22%2C%22parsedDate%22%3A%222014%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BLee%2C%20J.%20S.%2C%20Jang%2C%20C.%20W.%2C%20Kim%2C%20J.%20M.%2C%20Shin%2C%20D.%20H.%2C%20Kim%2C%20S.%2C%20Choi%2C%20S.-H.%2C%20Belay%2C%20K.%2C%20%26amp%3B%20Elliman%2C%20R.%20G.%20%282014%29.%20Graphene%20synthesis%20by%20C%20implantation%20into%20Cu%20foils.%20%26lt%3Bi%26gt%3BCarbon%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B66%26lt%3B%5C%2Fi%26gt%3B%2C%20267%26%23x2013%3B271.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.carbon.2013.08.066%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.carbon.2013.08.066%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Graphene%20synthesis%20by%20C%20implantation%20into%20Cu%20foils%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jae%20Sung%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22K.%22%2C%22lastName%22%3A%22Belay%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22R.G.%22%2C%22lastName%22%3A%22Elliman%22%7D%5D%2C%22abstractNote%22%3A%22Cu%20foils%20of%202%20%5Cu00b7%202%20cm2%20have%20been%20implanted%20with%2070%20keV%20C%20ions%20to%20nominal%20%5Cufb02uences%20of%20%282%5Cu201310%29%20%5Cu00b7%201015%20cm%202%20at%20room%20temperature%20%28RT%29%20and%20subsequently%20annealed%20at%20900%5Cu20131100%20%5Cu00b0C%20for%2015%20min%2C%20before%20being%20cooled%20to%20RT%20to%20form%20graphene%20layers%20on%20the%20Cu%20surfaces.%20Analyses%20with%20Raman%20spectroscopy%20and%20atomic%20force%20microscopy%20demonstrate%20that%20a%20continuous%20%5Cufb01lm%20of%20bi-layer%20graphene%20%28BG%29%20is%20produced%20for%20implant%20%5Cufb02uences%20as%20low%20as%202%20%5Cu00b7%201015%20cm%202%2C%20much%20less%20than%20the%20carbon%20content%20of%20the%20BG%20%5Cufb01lms.%20This%20suggests%20that%20the%20implanted%20carbon%20facilitates%20the%20nucleation%20and%20growth%20of%20graphene%2C%20with%20additional%20carbon%20supplied%20by%20the%20Cu%20substrate%20%280.515%20ppm%20carbon%20content%29.%20No%20graphene%20was%20observed%20on%20unimplanted%20Cu%20foils%20subjected%20to%20the%20same%20thermal%20treatment.%20This%20implantation%20method%20provides%20a%20novel%20technique%20for%20the%20selective%20growth%20of%20graphene%20on%20Cu%20surfaces.%22%2C%22date%22%3A%2201%5C%2F2014%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.carbon.2013.08.066%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS0008622313008397%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2200086223%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-16T13%3A36%3A06Z%22%7D%7D%5D%7D
Kim, J., Joo, S. S., Lee, K. W., Kim, J. H., Shin, D. H., Kim, S., & Choi, S.-H. (2014). Near-Ultraviolet-Sensitive Graphene/Porous Silicon Photodetectors. ACS Applied Materials & Interfaces, 6(23), 20880–20886. https://doi.org/10.1021/am5053812
Park, J. W., So, H. S., Kim, S., Choi, S.-H., Lee, H., Lee, J., Lee, C., & Kim, Y. (2014). Optical properties of large-area ultrathin MoS2 films: Evolution from a single layer to multilayers. Journal of Applied Physics, 116(18), 183509. https://doi.org/10.1063/1.4901464
Kim, C. O., Hwang, S. W., Kim, S., Shin, D. H., Kang, S. S., Kim, J. M., Jang, C. W., Kim, J. H., Lee, K. W., Choi, S.-H., & Hwang, E. (2014). High-performance graphene-quantum-dot photodetectors. Scientific Reports, 4(1), 5603. https://doi.org/10.1038/srep05603
Sin Joo, S., Kim, J., Seok Kang, S., Kim, S., Choi, S.-H., & Won Hwang, S. (2014). Graphene-quantum-dot nonvolatile charge-trap flash memories. Nanotechnology, 25(25), 255203. https://doi.org/10.1088/0957-4484/25/25/255203
Kim, J., Oh, S. D., Kim, J. H., Shin, D. H., Kim, S., & Choi, S.-H. (2014). Graphene/Si-nanowire heterostructure molecular sensors. Scientific Reports, 4(1), 5384. https://doi.org/10.1038/srep05384
Shin, D. H., Lee, K. W., Lee, J. S., Kim, J. H., Kim, S., & Choi, S.-H. (2014). Enhancement of the effectiveness of graphene as a transparent conductive electrode by AgNO3 doping. Nanotechnology, 25(12), 125701. https://doi.org/10.1088/0957-4484/25/12/125701
Kim, C. O., Kim, S., Shin, D. H., Kang, S. S., Kim, J. M., Jang, C. W., Joo, S. S., Lee, J. S., Kim, J. H., Choi, S.-H., & Hwang, E. (2014). High photoresponsivity in an all-graphene p–n vertical junction photodetector. Nature Communications, 5(1), 3249. https://doi.org/10.1038/ncomms4249
Shin, D. H., Kim, S., Jang, C. W., Kim, J. M., Kim, J. H., & Choi, S.-H. (2014). In-situ monitoring of AuCl3-doping and -dedoping behaviors in graphene. Journal of the Korean Physical Society, 64(9), 1327–1330. https://doi.org/10.3938/jkps.64.1327
Kang, S. S., Joo, S. S., Kim, S., & Choi, S.-H. (2014). Effect of size variation on the cathodoluminescence characteristics of graphene quantum dots. Current Applied Physics, 14, S111–S114. https://doi.org/10.1016/j.cap.2013.11.012
Lee, J. S., Jang, C. W., Kim, J. M., Shin, D. H., Kim, S., Choi, S.-H., Belay, K., & Elliman, R. G. (2014). Graphene synthesis by C implantation into Cu foils. Carbon, 66, 267–271. https://doi.org/10.1016/j.carbon.2013.08.066
2013
19376884
TCJXIC7M
2013
1
apa
50
date
desc
1442
https://nano.khu.ac.kr/wp-content/plugins/zotpress/
%7B%22status%22%3A%22success%22%2C%22updateneeded%22%3Afalse%2C%22instance%22%3Afalse%2C%22meta%22%3A%7B%22request_last%22%3A0%2C%22request_next%22%3A0%2C%22used_cache%22%3Atrue%7D%2C%22data%22%3A%5B%7B%22key%22%3A%22Q2HUWQYH%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Jang%20et%20al.%22%2C%22parsedDate%22%3A%222013-10-11%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BJang%2C%20C.%20W.%2C%20Kim%2C%20J.%20H.%2C%20Kim%2C%20J.%20M.%2C%20Shin%2C%20D.%20H.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282013%29.%20Rapid-thermal-annealing%20surface%20treatment%20for%20restoring%20the%20intrinsic%20properties%20of%20graphene%20field-effect%20transistors.%20%26lt%3Bi%26gt%3BNanotechnology%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B24%26lt%3B%5C%2Fi%26gt%3B%2840%29%2C%20405301.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F0957-4484%5C%2F24%5C%2F40%5C%2F405301%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F0957-4484%5C%2F24%5C%2F40%5C%2F405301%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Rapid-thermal-annealing%20surface%20treatment%20for%20restoring%20the%20intrinsic%20properties%20of%20graphene%20field-effect%20transistors%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Graphene%20%5Cufb01eld-effect%20transistors%20%28GFETs%29%20were%20fabricated%20by%20photolithography%20and%20lift-off%20processes%2C%20and%20subsequently%20heated%20in%20a%20rapid-thermal-annealing%20%28RTA%29%20apparatus%20at%20temperatures%20%28TA%29%20from%20200%20to%20400%20%5Cu25e6C%20for%2010%20min%20under%20nitrogen%20to%20eliminate%20the%20residues%20adsorbed%20on%20the%20graphene%20during%20the%20GFET%20fabrication%20processes.%20Raman-scattering%2C%20current%5Cu2013voltage%20%28I%5Cu2013V%29%2C%20and%20sheet%20resistance%20measurements%20showed%20that%2C%20after%20annealing%20at%20250%20%5Cu25e6C%2C%20graphene%20in%20GFETs%20regained%20its%20intrinsic%20properties%2C%20such%20as%20very%20small%20intensity%20ratios%20of%20D%20to%20G%20and%20G%20to%202D%20Raman%20bands%2C%20a%20symmetric%20I%5Cu2013V%20curve%20with%20respect%20to%20%5Cu223c0%20V%2C%20and%20very%20low%20sheet%20resistance.%20Atomic%20force%20microscopy%20images%20and%20height%20pro%5Cufb01les%20also%20showed%20that%20the%20surface%20roughness%20of%20graphene%20was%20almost%20minimized%20at%20TA%20%3D%20250%20%5Cu25e6C.%20By%20annealing%20at%20250%20%5Cu25e6C%2C%20the%20electron%20and%20hole%20mobilities%20reached%20their%20maxima%20of%204587%20and%204605%20cm2%20V%5Cu22121%20s%5Cu22121%2C%20respectively%2C%20the%20highest%20ever%20reported%20for%20chemical-vapor-deposition-grown%20graphene.%20Annealing%20was%20also%20performed%20under%20vacuum%20or%20hydrogen%2C%20but%20this%20was%20not%20so%20effective%20as%20under%20nitrogen.%20These%20results%20suggest%20that%20the%20RTA%20technique%20is%20very%20useful%20for%20eliminating%20the%20surface%20residues%20of%20graphene%20in%20GFETs%2C%20in%20that%20it%20employs%20a%20relatively%20low%20thermal%20budget%20of%20250%20%5Cu25e6C%20and%2010%20min.%22%2C%22date%22%3A%222013-10-11%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1088%5C%2F0957-4484%5C%2F24%5C%2F40%5C%2F405301%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fiopscience.iop.org%5C%2Farticle%5C%2F10.1088%5C%2F0957-4484%5C%2F24%5C%2F40%5C%2F405301%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220957-4484%2C%201361-6528%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A14%3A11Z%22%7D%7D%2C%7B%22key%22%3A%22DGRGPV53%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222013-06-25%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20S.%2C%20Shin%2C%20D.%20H.%2C%20Kim%2C%20C.%20O.%2C%20Kang%2C%20S.%20S.%2C%20Kim%2C%20J.%20M.%2C%20Jang%2C%20C.%20W.%2C%20Joo%2C%20S.%20S.%2C%20Lee%2C%20J.%20S.%2C%20Kim%2C%20J.%20H.%2C%20Choi%2C%20S.-H.%2C%20%26amp%3B%20Hwang%2C%20E.%20%282013%29.%20Graphene%20p%26%23x2013%3Bn%20Vertical%20Tunneling%20Diodes.%20%26lt%3Bi%26gt%3BACS%20Nano%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B7%26lt%3B%5C%2Fi%26gt%3B%286%29%2C%205168%26%23x2013%3B5174.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1021%5C%2Fnn400899v%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1021%5C%2Fnn400899v%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Graphene%20p%5Cu2013n%20Vertical%20Tunneling%20Diodes%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chang%20Oh%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soo%20Seok%22%2C%22lastName%22%3A%22Kang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%20Min%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%20Wook%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soong%20Sin%22%2C%22lastName%22%3A%22Joo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jae%20Sung%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%20Hwan%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Euyheon%22%2C%22lastName%22%3A%22Hwang%22%7D%5D%2C%22abstractNote%22%3A%22Formation%20and%20characterization%20of%20graphene%20p%20n%20junctions%20are%20of%20particular%20interest%20because%20the%20p%20n%20junctions%20are%20used%20in%20a%20wide%20variety%20of%20electronic%5C%2Fphotonic%20systems%20as%20building%20blocks.%20Graphene%20p%20n%20junctions%20have%20been%20previously%20formed%20by%20using%20several%20techniques%2C%20but%20most%20of%20the%20studies%20are%20based%20on%20lateral-type%20p%20n%20junctions%2C%20showing%20no%20recti%5Cufb01cation%20behaviors.%20Here%2C%20we%20report%20a%20new%20type%20of%20graphene%20p%20n%20junction.%20We%20%5Cufb01rst%20fabricate%20and%20characterize%20vertical-type%20graphene%20p%20n%20junctions%20with%20two%20terminals.%20One%20of%20the%20most%20important%20characteristics%20of%20the%20vertical%20junctions%20is%20the%20asymmetric%20rectifying%20behavior%20showing%20an%20on%5C%2Fo%5Cufb00%20ratio%20of%20%5Cu223c103%20under%20bias%20voltages%20below%20%2810%20V%20without%20gating%20at%20higher%20n%20doping%20concentrations%2C%20which%20may%20be%20useful%20for%20practical%20device%20applications.%20In%20contrast%2C%20at%20lower%20n%20doping%20concentrations%2C%20the%20p%20n%20junctions%20are%20ohmic%2C%20consistent%20with%20the%20Kleintunneling%20e%5Cufb00ect.%20The%20observed%20recti%5Cufb01cation%20results%20possibly%20from%20the%20formation%20of%20strongly%20corrugated%20insulating%20or%20semiconducting%20interlayers%20between%20the%20metallic%20p-%20and%20n-graphene%20sheets%20at%20higher%20n%20doping%20concentrations%2C%20which%20is%20actually%20a%20structure%20like%20a%20metal%20insulator%20metal%20or%20metal%20semiconductor%20metal%20tunneling%20diode.%20The%20properties%20of%20the%20diodes%20are%20almost%20invariant%20even%206%20months%20after%20fabrication.%22%2C%22date%22%3A%222013-06-25%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1021%5C%2Fnn400899v%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fpubs.acs.org%5C%2Fdoi%5C%2F10.1021%5C%2Fnn400899v%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%221936-0851%2C%201936-086X%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A14%3A09Z%22%7D%7D%2C%7B%22key%22%3A%22N4KBQSDY%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Hee%20Shin%20et%20al.%22%2C%22parsedDate%22%3A%222013-02-14%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BHee%20Shin%2C%20D.%2C%20Min%20Kim%2C%20J.%2C%20Wook%20Jang%2C%20C.%2C%20Hwan%20Kim%2C%20J.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282013%29.%20Annealing%20effects%20on%20the%20characteristics%20of%20AuCl3-doped%20graphene.%20%26lt%3Bi%26gt%3BJournal%20of%20Applied%20Physics%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B113%26lt%3B%5C%2Fi%26gt%3B%286%29%2C%20064305.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.4790888%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.4790888%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Annealing%20effects%20on%20the%20characteristics%20of%20AuCl3-doped%20graphene%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%22%2C%22lastName%22%3A%22Hee%20Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%22%2C%22lastName%22%3A%22Min%20Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan%22%2C%22lastName%22%3A%22Wook%20Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Ju%22%2C%22lastName%22%3A%22Hwan%20Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22Single-layer%20graphene%20sheets%20grown%20on%20Cu%20foils%20by%20chemical%20vapor%20deposition%20were%20transferred%20on%20300%5Cu2009nm%20SiO2%5C%2Fn-type%20Si%20wafers%20and%20subsequently%20doped%20with%2010%20mM%20AuCl3%20solution.%20The%20doped%20graphene%20sheets%20were%20annealed%20at%20various%20temperatures%20%28TA%29%20under%20vacuum%20below%2010%5Cu22123%5Cu2009Torr%20for%2010%5Cu2009min%20and%20characterized%20by%20atomic%20force%20microscopy%2C%20Raman%20spectroscopy%2C%20x-ray%20photoelectron%20spectroscopy%20%28XPS%29%2C%20and%204-probe%20van%20der%20Pauw%20method.%20The%20XPS%20studies%20show%20that%20the%20compositions%20of%20Cl%20and%20Au3%2B%20ions%20in%20doped%20graphene%20sheets%20increase%20slightly%20by%20annealing%20at%2050%5Cu2009%5Cu00b0C%2C%20but%20by%20further%20increase%20of%20TA%20above%2050%5Cu2009%5Cu00b0C%2C%20they%20monotonically%20decrease%20and%20become%20almost%20negligible%20at%20TA%5Cu2009%3D%5Cu2009500%5Cu2009%5Cu00b0C.%20These%20XPS%20results%20are%20consistent%20with%20the%20corresponding%20TA-dependent%20behaviors%20of%20the%20Raman%20scattering%20and%20the%20sheet%20resistance%2C%20implying%20that%20the%20doping%20efficiency%20is%20maximized%20at%20TA%5Cu2009%3D%5Cu200950%5Cu2009%5Cu00b0C%20and%20the%20Cl%20and%20Au3%2B%20ions%20play%20a%20major%20role%20in%20the%20doping%5C%2Fdedoping%20processes%20that%20are%20very%20reversible%2C%20different%20from%20the%20case%20of%20carbon%20nanotubes.%20These%20results%20suggest%20that%20the%20annealing%20temperature%20is%20a%20crucial%20factor%20to%20determine%20the%20structural%20and%20electrical%20properties%20of%20AuCl3-doped%20graphene.%20Possible%20mechanisms%20are%20discussed%20to%20explain%20the%20doping%5C%2Fdedoping%20processes%20of%20graphene%20sheets.%22%2C%22date%22%3A%222013-02-14%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1063%5C%2F1.4790888%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fpubs.aip.org%5C%2Fjap%5C%2Farticle%5C%2F113%5C%2F6%5C%2F064305%5C%2F371405%5C%2FAnnealing-effects-on-the-characteristics-of-AuCl3%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220021-8979%2C%201089-7550%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A14%3A07Z%22%7D%7D%2C%7B%22key%22%3A%22NKIGL94L%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222013-02-04%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20S.%2C%20Hee%20Shin%2C%20D.%2C%20Oh%20Kim%2C%20C.%2C%20Seok%20Kang%2C%20S.%2C%20Sin%20Joo%2C%20S.%2C%20Choi%2C%20S.-H.%2C%20Won%20Hwang%2C%20S.%2C%20%26amp%3B%20Sone%2C%20C.%20%282013%29.%20Size-dependence%20of%20Raman%20scattering%20from%20graphene%20quantum%20dots%3A%20Interplay%20between%20shape%20and%20thickness.%20%26lt%3Bi%26gt%3BApplied%20Physics%20Letters%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B102%26lt%3B%5C%2Fi%26gt%3B%285%29%2C%20053108.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.4790641%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.4790641%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Size-dependence%20of%20Raman%20scattering%20from%20graphene%20quantum%20dots%3A%20Interplay%20between%20shape%20and%20thickness%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%22%2C%22lastName%22%3A%22Hee%20Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chang%22%2C%22lastName%22%3A%22Oh%20Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soo%22%2C%22lastName%22%3A%22Seok%20Kang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soong%22%2C%22lastName%22%3A%22Sin%20Joo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Won%20Hwang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Cheolsoo%22%2C%22lastName%22%3A%22Sone%22%7D%5D%2C%22abstractNote%22%3A%22Raman-scattering%20behaviors%20have%20been%20studied%20in%20graphene%20quantum%20dots%20%28GQDs%29%20by%20varying%20their%20average%20size%20%28d%29%20from%205%20to%2035%5Cu2009nm.%20The%20peak%20frequencies%20of%20D%20and%202D%20bands%20are%20almost%20irrespective%20of%20d%2C%20and%20the%20intensity%20of%20the%20D%20band%20is%20larger%20than%20that%20of%20the%20G%20band%20over%20almost%20full%20range%20of%20d.%20These%20results%20suggest%20that%20GQDs%20are%20defective%2C%20possibly%20resulting%20from%20the%20dominant%20contributions%20from%20the%20edge%20states%20at%20the%20periphery%20of%20GQDs.%20The%20G%20band%20shows%20a%20maximum%20peak%20frequency%20at%20d%5Cu2009%3D%5Cu2009%5Cu223c17%20nm%2C%20whilst%20the%20full-width%20half%20maximum%20of%20the%20G%20band%20and%20the%20peak-intensity%20ratio%20of%20the%20D%20to%20G%20bands%20are%20minimized%20at%20d%5Cu2009%3D%5Cu2009%5Cu223c17%5Cu2009nm.%20Since%20the%20average%20thickness%20of%20GQDs%20%28t%29%20is%20proportional%20to%20d%2C%20t%20can%20act%20as%20a%20factor%20affecting%20the%20d-dependent%20Raman-scattering%20behaviors%2C%20but%20they%20cannot%20be%20explained%20solely%20by%20the%20t%20variation.%20We%20propose%20that%20the%20abrupt%20changes%20in%20the%20Raman-scattering%20behaviors%20of%20GQDs%20at%20d%5Cu2009%3D%5Cu2009%5Cu223c17%5Cu2009nm%20originate%20from%20size-dependent%20edge-state%20variation%20of%20GQDs%20at%20d%5Cu2009%3D%5Cu2009%5Cu223c17%5Cu2009nm%20as%20d%20increases.%22%2C%22date%22%3A%222013-02-04%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1063%5C%2F1.4790641%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fpubs.aip.org%5C%2Fapl%5C%2Farticle%5C%2F102%5C%2F5%5C%2F053108%5C%2F1068461%5C%2FSize-dependence-of-Raman-scattering-from-graphene%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220003-6951%2C%201077-3118%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A14%3A05Z%22%7D%7D%5D%7D
Jang, C. W., Kim, J. H., Kim, J. M., Shin, D. H., Kim, S., & Choi, S.-H. (2013). Rapid-thermal-annealing surface treatment for restoring the intrinsic properties of graphene field-effect transistors. Nanotechnology, 24(40), 405301. https://doi.org/10.1088/0957-4484/24/40/405301
Kim, S., Shin, D. H., Kim, C. O., Kang, S. S., Kim, J. M., Jang, C. W., Joo, S. S., Lee, J. S., Kim, J. H., Choi, S.-H., & Hwang, E. (2013). Graphene p–n Vertical Tunneling Diodes. ACS Nano, 7(6), 5168–5174. https://doi.org/10.1021/nn400899v
Hee Shin, D., Min Kim, J., Wook Jang, C., Hwan Kim, J., Kim, S., & Choi, S.-H. (2013). Annealing effects on the characteristics of AuCl3-doped graphene. Journal of Applied Physics, 113(6), 064305. https://doi.org/10.1063/1.4790888
Kim, S., Hee Shin, D., Oh Kim, C., Seok Kang, S., Sin Joo, S., Choi, S.-H., Won Hwang, S., & Sone, C. (2013). Size-dependence of Raman scattering from graphene quantum dots: Interplay between shape and thickness. Applied Physics Letters, 102(5), 053108. https://doi.org/10.1063/1.4790641
2012
19376884
TCJXIC7M
2012
1
apa
50
date
desc
1442
https://nano.khu.ac.kr/wp-content/plugins/zotpress/
%7B%22status%22%3A%22success%22%2C%22updateneeded%22%3Afalse%2C%22instance%22%3Afalse%2C%22meta%22%3A%7B%22request_last%22%3A0%2C%22request_next%22%3A0%2C%22used_cache%22%3Atrue%7D%2C%22data%22%3A%5B%7B%22key%22%3A%22SHXGQMX2%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Yeol%20Shin%20et%20al.%22%2C%22parsedDate%22%3A%222012-11-15%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BYeol%20Shin%2C%20D.%2C%20Hee%20Park%2C%20J.%2C%20Kim%2C%20S.%2C%20Choi%2C%20S.-H.%2C%20%26amp%3B%20Joong%20Kim%2C%20K.%20%282012%29.%20Graded-size%20Si-nanocrystal-multilayer%20solar%20cells.%20%26lt%3Bi%26gt%3BJournal%20of%20Applied%20Physics%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B112%26lt%3B%5C%2Fi%26gt%3B%2810%29%2C%20104304.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.4766307%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.4766307%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Graded-size%20Si-nanocrystal-multilayer%20solar%20cells%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%22%2C%22lastName%22%3A%22Yeol%20Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jae%22%2C%22lastName%22%3A%22Hee%20Park%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Kyung%22%2C%22lastName%22%3A%22Joong%20Kim%22%7D%5D%2C%22abstractNote%22%3A%22Four%20kinds%20of%20Si-nanocrystal%20%28NC%29%20multilayers%20%28MLs%29%20have%20been%20fabricated%20on%20n-type%20Si%20wafers%20by%20changing%20the%20optical%20bandgap%20gradually%20in%20the%20directions%20towards%20the%20Si%20substrate%20or%20towards%20the%20center%20of%20the%20MLs%20through%20the%20variation%20of%20the%20NC%20size%20in%20each%20layer.%20Photovoltaic%20behaviors%20of%20the%20graded-size%20p-type%20Si-NC%20MLs%5C%2Fn-type%20Si-wafer%20heterojunction%20solar%20cells%20are%20shown%20to%20strongly%20depend%20on%20the%20ML%20structure.%20The%20Si-NC%20ML%20solar%20cells%20with%20a%20stepwise%20increase%20in%20the%20bandgap%20towards%20the%20center%20of%20the%20MLs%20exhibit%20best%20energy-conversion%20efficiency%20at%20low%20doping%20levels.%20These%20results%20are%20discussed%20based%20on%20the%20radiative%20and%20nonradiative%20processes%20in%20the%20graded-size%20Si-NC%20MLs%2C%20as%20analyzed%20by%20continuous-wave%20and%20time-resolved%20photoluminescence%20measurements.%22%2C%22date%22%3A%222012-11-15%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1063%5C%2F1.4766307%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fpubs.aip.org%5C%2Fjap%5C%2Farticle%5C%2F112%5C%2F10%5C%2F104304%5C%2F368614%5C%2FGraded-size-Si-nanocrystal-multilayer-solar-cells%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220021-8979%2C%201089-7550%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A13%3A36Z%22%7D%7D%2C%7B%22key%22%3A%22EVG5UGCL%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222012-10-15%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20S.%2C%20Hee%20Shin%2C%20D.%2C%20Oh%20Kim%2C%20C.%2C%20Seok%20Kang%2C%20S.%2C%20Min%20Kim%2C%20J.%2C%20Choi%2C%20S.-H.%2C%20Jin%2C%20L.-H.%2C%20Cho%2C%20Y.-H.%2C%20Won%20Hwang%2C%20S.%2C%20%26amp%3B%20Sone%2C%20C.%20%282012%29.%20Size-dependent%20radiative%20decay%20processes%20in%20graphene%20quantum%20dots.%20%26lt%3Bi%26gt%3BApplied%20Physics%20Letters%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B101%26lt%3B%5C%2Fi%26gt%3B%2816%29%2C%20163103.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.4760269%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.4760269%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Size-dependent%20radiative%20decay%20processes%20in%20graphene%20quantum%20dots%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%22%2C%22lastName%22%3A%22Hee%20Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chang%22%2C%22lastName%22%3A%22Oh%20Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Soo%22%2C%22lastName%22%3A%22Seok%20Kang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jong%22%2C%22lastName%22%3A%22Min%20Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Li-Hua%22%2C%22lastName%22%3A%22Jin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Yong-Hoon%22%2C%22lastName%22%3A%22Cho%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Won%20Hwang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Cheolsoo%22%2C%22lastName%22%3A%22Sone%22%7D%5D%2C%22abstractNote%22%3A%22Radiative%20decay%20processes%20have%20been%20studied%20in%20graphene%20quantum%20dots%20%28GQDs%29%20by%20varying%20their%20size.%20The%20photoluminescence%20%28PL%29%20decay%20traces%20are%20well%20fitted%20to%20a%20biexponential%20function%20with%20lifetimes%20of%20%5Cu03c41%20and%20%5Cu03c42%2C%20indicating%20their%20fast%20and%20slow%20components%2C%20respectively.%20The%20%5Cu03c41%20is%20almost%20constant%2C%20irrespective%20of%20the%20average%20GQD%20size%20%28da%29%20for%20two%20excitation%20wavelengths%20of%20305%20and%20356%5Cu2009nm.%20In%20contrast%2C%20the%20%5Cu03c42%20decreases%20as%20da%20increases%20for%20da%20%5Cu2264%20%5Cu223c17%5Cu2009nm%2C%20but%20da%20%26gt%3B%20%5Cu223c17%5Cu2009nm%2C%20it%20increases%20with%20increasing%20da%20for%20both%20the%20excitation%20wavelengths%2C%20similar%20to%20the%20size-dependent%20behaviors%20of%20the%20time-integrated%20PL%20peak%20energy.%20We%20propose%20that%20the%20%5Cu03c41%20and%20%5Cu03c42%20originate%20from%20size-independent%20fast%20band-to-band%20transition%20and%20size-dependent%20slow%20transition%20resulting%20from%20the%20edge-state%20variation%20at%20the%20periphery%20of%20GQDs%2C%20respectively.%22%2C%22date%22%3A%222012-10-15%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1063%5C%2F1.4760269%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fpubs.aip.org%5C%2Fapl%5C%2Farticle%5C%2F101%5C%2F16%5C%2F163103%5C%2F23631%5C%2FSize-dependent-radiative-decay-processes-in%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220003-6951%2C%201077-3118%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A13%3A33Z%22%7D%7D%2C%7B%22key%22%3A%22DICC42LK%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222012-09-25%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20S.%2C%20Hwang%2C%20S.%20W.%2C%20Kim%2C%20M.-K.%2C%20Shin%2C%20D.%20Y.%2C%20Shin%2C%20D.%20H.%2C%20Kim%2C%20C.%20O.%2C%20Yang%2C%20S.%20B.%2C%20Park%2C%20J.%20H.%2C%20Hwang%2C%20E.%2C%20Choi%2C%20S.-H.%2C%20Ko%2C%20G.%2C%20Sim%2C%20S.%2C%20Sone%2C%20C.%2C%20Choi%2C%20H.%20J.%2C%20Bae%2C%20S.%2C%20%26amp%3B%20Hong%2C%20B.%20H.%20%282012%29.%20Anomalous%20Behaviors%20of%20Visible%20Luminescence%20from%20Graphene%20Quantum%20Dots%3A%20Interplay%20between%20Size%20and%20Shape.%20%26lt%3Bi%26gt%3BACS%20Nano%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B6%26lt%3B%5C%2Fi%26gt%3B%289%29%2C%208203%26%23x2013%3B8208.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1021%5C%2Fnn302878r%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1021%5C%2Fnn302878r%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Anomalous%20Behaviors%20of%20Visible%20Luminescence%20from%20Graphene%20Quantum%20Dots%3A%20Interplay%20between%20Size%20and%20Shape%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%20Won%22%2C%22lastName%22%3A%22Hwang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Min-Kook%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Yeol%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chang%20Oh%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seung%20Bum%22%2C%22lastName%22%3A%22Yang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jae%20Hee%22%2C%22lastName%22%3A%22Park%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Euyheon%22%2C%22lastName%22%3A%22Hwang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Geunwoo%22%2C%22lastName%22%3A%22Ko%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sunghyun%22%2C%22lastName%22%3A%22Sim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Cheolsoo%22%2C%22lastName%22%3A%22Sone%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Hyoung%20Joon%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sukang%22%2C%22lastName%22%3A%22Bae%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Byung%20Hee%22%2C%22lastName%22%3A%22Hong%22%7D%5D%2C%22abstractNote%22%3A%22For%20the%20application%20of%20graphene%20quantum%20dots%20%28GQDs%29%20to%20optoelectronic%20nanodevices%2C%20it%20is%20of%20critical%20importance%20to%20understand%20the%20mechanisms%20which%20result%20in%20novel%20phenomena%20of%20their%20light%20absorption%5C%2Femission.%20Here%2C%20we%20present%20size-dependent%20shape%5C%2Fedge-state%20variations%20of%20GQDs%20and%20visible%20photoluminescence%20%28PL%29%20showing%20anomalous%20size%20dependences.%20With%20varying%20the%20average%20size%20%28da%29%20of%20GQDs%20from%205%20to%2035%20nm%2C%20the%20peak%20energy%20of%20the%20absorption%20spectra%20monotonically%20decreases%2C%20while%20that%20of%20the%20visible%20PL%20spectra%20unusually%20shows%20nonmonotonic%20behaviors%20having%20a%20minimum%20at%20da%20%3D%20%5Cu223c17%20nm.%20The%20PL%20behaviors%20can%20be%20attributed%20to%20the%20novel%20feature%20of%20GQDs%2C%20that%20is%2C%20the%20circular-to-polygonal-shape%20and%20corresponding%20edge-state%20variations%20of%20GQDs%20at%20da%20%3D%20%5Cu223c17%20nm%20as%20the%20GQD%20size%20increases%2C%20as%20demonstrated%20by%20highresolution%20transmission%20electron%20microscopy.%22%2C%22date%22%3A%222012-09-25%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1021%5C%2Fnn302878r%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fpubs.acs.org%5C%2Fdoi%5C%2F10.1021%5C%2Fnn302878r%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%221936-0851%2C%201936-086X%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A13%3A31Z%22%7D%7D%2C%7B%22key%22%3A%226T6ZLSBH%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222012-06-18%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20S.%2C%20Shin%2C%20D.%20H.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282012%29.%20Ultrafast%20photoluminescence%20from%20freestanding%20Si%20nanocrystals.%20%26lt%3Bi%26gt%3BApplied%20Physics%20Letters%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B100%26lt%3B%5C%2Fi%26gt%3B%2825%29%2C%20253103.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.4729605%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.4729605%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Ultrafast%20photoluminescence%20from%20freestanding%20Si%20nanocrystals%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22SiO1.2%5C%2FSiO2%20multilayers%20were%20grown%20on%20n-type%20%28100%29%20Si%20wafers%20by%20ion%20beam%20sputtering%20and%20subsequently%20annealed%20at%201100%5Cu2009%5Cu00b0C%20to%20form%20SiO2-embedded%20Si%20%28S-Si%29%20nanocrystals%20%28NCs%29.%20The%20SiO2%20matrix%20was%20then%20removed%20from%20S-Si%20NCs%20by%20chemical%20treatments%20to%20prepare%20freestanding%20Si%20%28F-Si%29%20NCs.%20The%20photoluminescence%20%28PL%29%20peak%20of%20F-Si%20NCs%20at%20%5Cu223c657%5Cu2009nm%20%281.89%5Cu2009eV%29%20is%20blue-shifted%20with%20respect%20to%20that%20of%20S-Si%20NCs%20at%20%5Cu223c816%5Cu2009nm%20%281.52%5Cu2009eV%29.%20The%20peak%20shift%20of%20%5Cu223c0.37%5Cu2009eV%20is%20much%20larger%20than%20what%20is%20expected%20by%20the%20quantum%20confinement%20effect.%20The%20PL%20lifetime%20of%20F-Si%20NCs%20%28%5Cu223c3%5Cu2009ns%29%20is%20much%20shorter%20than%20that%20of%20S-Si%20NCs%20%28%5Cu223c50%5Cu2009%5Cu03bcs%29.%20Possible%20physical%20mechanisms%20are%20discussed%20to%20explain%20the%20origin%20of%20the%20fast%20PL%20band%20found%20in%20F-Si%20NCs.%22%2C%22date%22%3A%222012-06-18%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1063%5C%2F1.4729605%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fpubs.aip.org%5C%2Fapl%5C%2Farticle%5C%2F100%5C%2F25%5C%2F253103%5C%2F126524%5C%2FUltrafast-photoluminescence-from-freestanding-Si%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220003-6951%2C%201077-3118%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A13%3A22Z%22%7D%7D%2C%7B%22key%22%3A%22PV8H2TQR%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Jang%20et%20al.%22%2C%22parsedDate%22%3A%222012%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BJang%2C%20H.%2C%20Park%2C%20J.-W.%2C%20Kim%2C%20S.%2C%20Choi%2C%20S.-H.%2C%20%26amp%3B%20Lee%2C%20H.%20%282012%29.%20Optical%20study%20of%20bulk%20and%20thin-film%20tin%20dioxide.%20%26lt%3Bi%26gt%3BJournal%20of%20the%20Korean%20Physical%20Society%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B61%26lt%3B%5C%2Fi%26gt%3B%2812%29%2C%202005%26%23x2013%3B2010.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.3938%5C%2Fjkps.61.2005%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.3938%5C%2Fjkps.61.2005%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Optical%20study%20of%20bulk%20and%20thin-film%20tin%20dioxide%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Hyungkeun%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jun-Woo%22%2C%22lastName%22%3A%22Park%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Hosun%22%2C%22lastName%22%3A%22Lee%22%7D%5D%2C%22abstractNote%22%3A%22%22%2C%22date%22%3A%2212%5C%2F2012%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.3938%5C%2Fjkps.61.2005%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22http%3A%5C%2F%5C%2Flink.springer.com%5C%2F10.3938%5C%2Fjkps.61.2005%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220374-4884%2C%201976-8524%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A13%3A38Z%22%7D%7D%2C%7B%22key%22%3A%22I3G9PRX6%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222012%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20C.%20O.%2C%20Kim%2C%20S.%2C%20Shin%2C%20D.%20H.%2C%20Shin%2C%20D.%20Y.%2C%20Choi%2C%20S.-H.%2C%20Hwang%2C%20S.%20W.%2C%20Cha%2C%20N.-G.%2C%20%26amp%3B%20Kang%2C%20S.%20%282012%29.%20Effect%20of%20Ga%20doping%20concentration%20on%20the%20luminescence%20efficiency%20of%20GaN%20light-emitting%20diodes%20with%20Ga-doped%20ZnO%20contacts.%20%26lt%3Bi%26gt%3BApplied%20Physics%20B%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B109%26lt%3B%5C%2Fi%26gt%3B%282%29%2C%20283%26%23x2013%3B287.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1007%5C%2Fs00340-012-5129-z%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1007%5C%2Fs00340-012-5129-z%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Effect%20of%20Ga%20doping%20concentration%20on%20the%20luminescence%20efficiency%20of%20GaN%20light-emitting%20diodes%20with%20Ga-doped%20ZnO%20contacts%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chang%20Oh%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Yeol%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%20Won%22%2C%22lastName%22%3A%22Hwang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Nam-Goo%22%2C%22lastName%22%3A%22Cha%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sammook%22%2C%22lastName%22%3A%22Kang%22%7D%5D%2C%22abstractNote%22%3A%22P%5Cu2013n%20junction%20GaN%20light-emitting%20diodes%20%28LEDs%29%20were%20fabricated%20using%20Ga-doped%20ZnO%20%28GZO%29%20%5Cufb01lms%20as%20electrical%20contacts%20and%20characterized%20by%20electroluminescence%20%28EL%29%20and%20current%5Cu2013voltage%20%28I%5Cu2013V%29%20measurements.%20GaN%20p%5Cu2013n%20epilayers%20with%20a%20total%20thickness%20of%20%2A6%20lm%20were%20grown%20on%20c-plane%20%280001%29%20sapphire%20substrates%20by%20metal%5Cu2013organic%20chemical%20vapor%20deposition.%20Half%20region%20of%20the%20p-GaN%20layer%20was%20etched%20until%20the%20n-GaN%20layer%20was%20exposed%2C%20and%20100-nm-thick%20GZO%20contacts%20were%20deposited%20on%20the%20p-%20and%20n-GaN%20layers%20by%20RF%20sputtering%20with%20varying%20Ga%20concentration%20%28nG%29%20from%201%20to%205%20mol%25.%20Based%20on%20the%20results%20of%20Hall%20effect%2C%20photoluminescence%20%28PL%29%2C%20and%20X-ray%20diffraction%20%28XRD%29%2C%20the%20GZO%20%5Cufb01lms%20were%20expected%20to%20act%20as%20best%20electrical%20contacts%20for%20the%20LEDs%20at%20nG%20%3D%202%20mol%25.%20Under%20forward-bias%20conditions%2C%20the%20I%5Cu2013V%20curves%20showed%20diode%20characteristics%20except%20nG%20%3D%205%20mol%25%2C%20and%20the%20leakage%20current%20was%20minimized%20at%20nG%20%3D%202%20mol%25.%20Two%20dominant%20EL%20peaks%20of%20ultraviolet%20and%20yellow%20emissions%20were%20observed%20at%20%2A376%20and%20%2A560%20nm%2C%20and%20attributed%20to%20near-band-edgeand%20defect-related%20radiative%20transitions%2C%20respectively.%20At%20nG%20%3D%202%20mol%25%2C%20the%20UV%20EL%20showed%20markedly%20large%20intensities%20for%20all%20injection%20currents%2C%20consistent%20with%20the%20results%20of%20Hall%20effect%2C%20PL%2C%20I%5Cu2013V%2C%20and%20XRD.%22%2C%22date%22%3A%2211%5C%2F2012%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1007%5C%2Fs00340-012-5129-z%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22http%3A%5C%2F%5C%2Flink.springer.com%5C%2F10.1007%5C%2Fs00340-012-5129-z%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220946-2171%2C%201432-0649%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A13%3A29Z%22%7D%7D%2C%7B%22key%22%3A%22ZBFU6VMJ%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Shin%20et%20al.%22%2C%22parsedDate%22%3A%222012%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BShin%2C%20D.%20H.%2C%20Yang%2C%20S.%20B.%2C%20Shin%2C%20D.%20Y.%2C%20Kim%2C%20C.%20O.%2C%20Kim%2C%20S.%2C%20Choi%2C%20S.-H.%2C%20%26amp%3B%20Paek%2C%20S.-H.%20%282012%29.%20Graphene%20synthesis%20from%20graphite%5C%2FNi%20composite%20films%20grown%20by%20sputtering.%20%26lt%3Bi%26gt%3BJournal%20of%20the%20Korean%20Physical%20Society%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B61%26lt%3B%5C%2Fi%26gt%3B%284%29%2C%20563%26%23x2013%3B567.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.3938%5C%2Fjkps.61.563%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.3938%5C%2Fjkps.61.563%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Graphene%20synthesis%20from%20graphite%5C%2FNi%20composite%20films%20grown%20by%20sputtering%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seung%20Bum%22%2C%22lastName%22%3A%22Yang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Yeol%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chang%20Oh%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sang-Hyon%22%2C%22lastName%22%3A%22Paek%22%7D%5D%2C%22abstractNote%22%3A%22%22%2C%22date%22%3A%228%5C%2F2012%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.3938%5C%2Fjkps.61.563%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22http%3A%5C%2F%5C%2Flink.springer.com%5C%2F10.3938%5C%2Fjkps.61.563%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220374-4884%2C%201976-8524%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A13%3A27Z%22%7D%7D%2C%7B%22key%22%3A%22GY7IBNN5%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222012%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20C.%20O.%2C%20Shin%2C%20D.%20H.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282012%29.%20Effect%20of%20Al%20concentration%20on%20the%20structural%2C%20electrical%2C%20and%20optical%20properties%20of%20transparent%20Al-doped%20ZnO.%20%26lt%3Bi%26gt%3BJournal%20of%20the%20Korean%20Physical%20Society%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B61%26lt%3B%5C%2Fi%26gt%3B%284%29%2C%20599%26%23x2013%3B602.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.3938%5C%2Fjkps.61.599%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.3938%5C%2Fjkps.61.599%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Effect%20of%20Al%20concentration%20on%20the%20structural%2C%20electrical%2C%20and%20optical%20properties%20of%20transparent%20Al-doped%20ZnO%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chang%20Oh%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22%22%2C%22date%22%3A%228%5C%2F2012%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.3938%5C%2Fjkps.61.599%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22http%3A%5C%2F%5C%2Flink.springer.com%5C%2F10.3938%5C%2Fjkps.61.599%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220374-4884%2C%201976-8524%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A13%3A24Z%22%7D%7D%2C%7B%22key%22%3A%22S2LSXRRD%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Lim%20et%20al.%22%2C%22parsedDate%22%3A%222012%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BLim%2C%20K.%20Y.%2C%20Park%2C%20J.%20H.%2C%20Kim%2C%20S.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282012%29.%20Effect%20of%20oxygen%20content%20on%20resistive%20switching%20memory%20characteristics%20of%20TiO%20x%20films.%20%26lt%3Bi%26gt%3BJournal%20of%20the%20Korean%20Physical%20Society%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B60%26lt%3B%5C%2Fi%26gt%3B%285%29%2C%20791%26%23x2013%3B794.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.3938%5C%2Fjkps.60.791%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.3938%5C%2Fjkps.60.791%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Effect%20of%20oxygen%20content%20on%20resistive%20switching%20memory%20characteristics%20of%20TiO%20x%20films%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Keun%20Yong%22%2C%22lastName%22%3A%22Lim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jae%20Hee%22%2C%22lastName%22%3A%22Park%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22%22%2C%22date%22%3A%223%5C%2F2012%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.3938%5C%2Fjkps.60.791%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22http%3A%5C%2F%5C%2Flink.springer.com%5C%2F10.3938%5C%2Fjkps.60.791%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220374-4884%2C%201976-8524%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A13%3A19Z%22%7D%7D%2C%7B%22key%22%3A%22V55S3HBG%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222012%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20S.%2C%20Shin%2C%20D.%20H.%2C%20Shin%2C%20D.%20Y.%2C%20Kim%2C%20C.%20O.%2C%20Park%2C%20J.%20H.%2C%20Yang%2C%20S.%20B.%2C%20Choi%2C%20S.-H.%2C%20Yoo%2C%20S.%20J.%2C%20%26amp%3B%20Kim%2C%20J.-G.%20%282012%29.%20Luminescence%20Properties%20of%20Si%20Nanocrystals%20Fabricated%20by%20Ion%20Beam%20Sputtering%20and%20Annealing.%20%26lt%3Bi%26gt%3BJournal%20of%20Nanomaterials%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B2012%26lt%3B%5C%2Fi%26gt%3B%281%29%2C%20572746.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1155%5C%2F2012%5C%2F572746%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1155%5C%2F2012%5C%2F572746%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Luminescence%20Properties%20of%20Si%20Nanocrystals%20Fabricated%20by%20Ion%20Beam%20Sputtering%20and%20Annealing%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Yeol%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chang%20Oh%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jae%20Hee%22%2C%22lastName%22%3A%22Park%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seung%20Bum%22%2C%22lastName%22%3A%22Yang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seung%20Jo%22%2C%22lastName%22%3A%22Yoo%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jin-Gyu%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22editor%22%2C%22firstName%22%3A%22J.%20C.%22%2C%22lastName%22%3A%22Sczancoski%22%7D%5D%2C%22abstractNote%22%3A%22During%20the%20past%20several%20decades%2C%20Si%20nanocrystals%20%28NCs%29%20have%20received%20remarkable%20attention%20in%20view%20of%20potential%20optoelectronic%20device%20applications.%20This%20paper%20summarizes%20recent%20progress%20in%20the%20study%20of%20luminescence%20from%20Si%20NCs%2C%20such%20as%20photoluminescence%20%28PL%29%2C%20cathodoluminescence%2C%20time%5Cu2010solved%20PL%2C%20and%20electroluminescence.%20The%20paper%20is%20especially%20focused%20on%20Si%20NCs%20produced%20by%20ion%20beam%20sputtering%20deposition%20of%20SiO%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%20%20x%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20single%20layer%20or%20SiO%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%20%20x%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%5C%2FSiO%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%202%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20multilayers%20and%20subsequent%20annealing.%20The%20effects%20of%20stoichiometry%20%28%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20x%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%29%20and%20thickness%20of%20SiO%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%20%20x%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20%5Cn%20%20%20%20%20%20%20%20%20%20%20%20%20%20layers%20on%20the%20luminescence%20are%20analyzed%20in%20detail%20and%20discussed%20based%20on%20possible%20mechanisms.%22%2C%22date%22%3A%2201%5C%2F2012%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1155%5C%2F2012%5C%2F572746%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fonlinelibrary.wiley.com%5C%2Fdoi%5C%2F10.1155%5C%2F2012%5C%2F572746%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%221687-4110%2C%201687-4129%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A13%3A17Z%22%7D%7D%2C%7B%22key%22%3A%22A5GNSA8L%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222012%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20S.%2C%20Shin%2C%20D.%20H.%2C%20Kim%2C%20C.%20O.%2C%20Hong%2C%20S.%20H.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282012%29.%20Size-dependent%20effect%20of%20energy%20transfer%20on%20photoluminescence%20from%20Si%20nanocrystals%20in%20close%20proximity%20with%20ZnO%20films.%20%26lt%3Bi%26gt%3BThin%20Solid%20Films%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B520%26lt%3B%5C%2Fi%26gt%3B%287%29%2C%203000%26%23x2013%3B3002.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.tsf.2011.12.026%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.tsf.2011.12.026%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Size-dependent%20effect%20of%20energy%20transfer%20on%20photoluminescence%20from%20Si%20nanocrystals%20in%20close%20proximity%20with%20ZnO%20films%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chang%20Oh%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seung%20Hui%22%2C%22lastName%22%3A%22Hong%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22%22%2C%22date%22%3A%2201%5C%2F2012%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.tsf.2011.12.026%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS0040609011021286%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2200406090%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A13%3A15Z%22%7D%7D%5D%7D
Yeol Shin, D., Hee Park, J., Kim, S., Choi, S.-H., & Joong Kim, K. (2012). Graded-size Si-nanocrystal-multilayer solar cells. Journal of Applied Physics, 112(10), 104304. https://doi.org/10.1063/1.4766307
Kim, S., Hee Shin, D., Oh Kim, C., Seok Kang, S., Min Kim, J., Choi, S.-H., Jin, L.-H., Cho, Y.-H., Won Hwang, S., & Sone, C. (2012). Size-dependent radiative decay processes in graphene quantum dots. Applied Physics Letters, 101(16), 163103. https://doi.org/10.1063/1.4760269
Kim, S., Hwang, S. W., Kim, M.-K., Shin, D. Y., Shin, D. H., Kim, C. O., Yang, S. B., Park, J. H., Hwang, E., Choi, S.-H., Ko, G., Sim, S., Sone, C., Choi, H. J., Bae, S., & Hong, B. H. (2012). Anomalous Behaviors of Visible Luminescence from Graphene Quantum Dots: Interplay between Size and Shape. ACS Nano, 6(9), 8203–8208. https://doi.org/10.1021/nn302878r
Kim, S., Shin, D. H., & Choi, S.-H. (2012). Ultrafast photoluminescence from freestanding Si nanocrystals. Applied Physics Letters, 100(25), 253103. https://doi.org/10.1063/1.4729605
Jang, H., Park, J.-W., Kim, S., Choi, S.-H., & Lee, H. (2012). Optical study of bulk and thin-film tin dioxide. Journal of the Korean Physical Society, 61(12), 2005–2010. https://doi.org/10.3938/jkps.61.2005
Kim, C. O., Kim, S., Shin, D. H., Shin, D. Y., Choi, S.-H., Hwang, S. W., Cha, N.-G., & Kang, S. (2012). Effect of Ga doping concentration on the luminescence efficiency of GaN light-emitting diodes with Ga-doped ZnO contacts. Applied Physics B, 109(2), 283–287. https://doi.org/10.1007/s00340-012-5129-z
Shin, D. H., Yang, S. B., Shin, D. Y., Kim, C. O., Kim, S., Choi, S.-H., & Paek, S.-H. (2012). Graphene synthesis from graphite/Ni composite films grown by sputtering. Journal of the Korean Physical Society, 61(4), 563–567. https://doi.org/10.3938/jkps.61.563
Kim, C. O., Shin, D. H., Kim, S., & Choi, S.-H. (2012). Effect of Al concentration on the structural, electrical, and optical properties of transparent Al-doped ZnO. Journal of the Korean Physical Society, 61(4), 599–602. https://doi.org/10.3938/jkps.61.599
Lim, K. Y., Park, J. H., Kim, S., & Choi, S.-H. (2012). Effect of oxygen content on resistive switching memory characteristics of TiO x films. Journal of the Korean Physical Society, 60(5), 791–794. https://doi.org/10.3938/jkps.60.791
Kim, S., Shin, D. H., Shin, D. Y., Kim, C. O., Park, J. H., Yang, S. B., Choi, S.-H., Yoo, S. J., & Kim, J.-G. (2012). Luminescence Properties of Si Nanocrystals Fabricated by Ion Beam Sputtering and Annealing. Journal of Nanomaterials, 2012(1), 572746. https://doi.org/10.1155/2012/572746
Kim, S., Shin, D. H., Kim, C. O., Hong, S. H., & Choi, S.-H. (2012). Size-dependent effect of energy transfer on photoluminescence from Si nanocrystals in close proximity with ZnO films. Thin Solid Films, 520(7), 3000–3002. https://doi.org/10.1016/j.tsf.2011.12.026
2011
19376884
TCJXIC7M
2011
1
apa
50
date
desc
1442
https://nano.khu.ac.kr/wp-content/plugins/zotpress/
%7B%22status%22%3A%22success%22%2C%22updateneeded%22%3Afalse%2C%22instance%22%3Afalse%2C%22meta%22%3A%7B%22request_last%22%3A0%2C%22request_next%22%3A0%2C%22used_cache%22%3Atrue%7D%2C%22data%22%3A%5B%7B%22key%22%3A%22FDH6BX66%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Oh%20Kim%20et%20al.%22%2C%22parsedDate%22%3A%222011-11-15%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BOh%20Kim%2C%20C.%2C%20Hee%20Shin%2C%20D.%2C%20Kim%2C%20S.%2C%20Choi%2C%20S.-H.%2C%20Belay%2C%20K.%2C%20%26amp%3B%20Elliman%2C%20R.%20G.%20%282011%29.%20Effect%20of%20%28O%2C%20As%29%20dual%20implantation%20on%20p-type%20doping%20of%20ZnO%20films.%20%26lt%3Bi%26gt%3BJournal%20of%20Applied%20Physics%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B110%26lt%3B%5C%2Fi%26gt%3B%2810%29%2C%20103708.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.3662908%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.3662908%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Effect%20of%20%28O%2C%20As%29%20dual%20implantation%20on%20p-type%20doping%20of%20ZnO%20films%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chang%22%2C%22lastName%22%3A%22Oh%20Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%22%2C%22lastName%22%3A%22Hee%20Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22K.%22%2C%22lastName%22%3A%22Belay%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22R.%20G.%22%2C%22lastName%22%3A%22Elliman%22%7D%5D%2C%22abstractNote%22%3A%22Optical%20and%20electrical%20characteristics%20of%20ZnO%20films%20co-implanted%20with%20O%20and%20As%20ions%20have%20been%20investigated%20by%20photoluminescence%20%28PL%29%2C%20Hall-effect%2C%20and%20current-voltage%20%28I-V%29%20measurements.%20100-nm-thick%20ZnO%20films%20grown%20on%20n-type%20Si%20%28100%29%20wafers%20by%20RF%20sputtering%20have%20been%20implanted%20with%20various%20fluences%20of%2030%20keV%20O%20and%20100%20keV%20As%20ions%20at%20room%20temperature%2C%20and%20subsequently%20annealed%20at%20800%5Cu2009%5Cu00b0C%20for%2020%20min%20in%20a%20N2%20ambient.%20The%20dually-implanted%20ZnO%20films%20show%20stable%20p-type%20characteristics%20for%20particular%20implant%20combinations%2C%20consistent%20with%20the%20observation%20of%20dominant%20PL%20peaks%20at%203.328%20and%203.357%20eV%20that%20are%20associated%20with%20the%20acceptor%20levels.%20For%20these%20dually-implanted%20p-type%20ZnO%20films%5C%2Fn-type%20Si%20diodes%2C%20the%20I-V%20curves%20show%20rectifying%20p-n%20junction%20behavior.%20Other%20singly%20%28As%29-%20or%20dually-implanted%20samples%20show%20n-type%20or%20indeterminable%20doping%20characteristics.%20These%20results%20suggest%20that%20O%20implantation%20plays%20a%20key%20role%20in%20forming%20p-type%20ZnO%20films%20by%20reducing%20the%20oxygen%20vacancy%20concentration%20and%20facilitating%20the%20formation%20of%20As-related%20acceptors%20in%20ZnO.%22%2C%22date%22%3A%222011-11-15%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1063%5C%2F1.3662908%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fpubs.aip.org%5C%2Fjap%5C%2Farticle%5C%2F110%5C%2F10%5C%2F103708%5C%2F283349%5C%2FEffect-of-O-As-dual-implantation-on-p-type-doping%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220021-8979%2C%201089-7550%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A12%3A57Z%22%7D%7D%2C%7B%22key%22%3A%22FQUHHKPC%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Park%20et%20al.%22%2C%22parsedDate%22%3A%222011-11-15%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BPark%2C%20J.-W.%2C%20Jang%2C%20H.%2C%20Kim%2C%20S.%2C%20Choi%2C%20S.-H.%2C%20Lee%2C%20H.%2C%20Kang%2C%20J.%2C%20%26amp%3B%20Wei%2C%20S.-H.%20%282011%29.%20Microstructure%2C%20optical%20property%2C%20and%20electronic%20band%20structure%20of%20cuprous%20oxide%20thin%20films.%20%26lt%3Bi%26gt%3BJournal%20of%20Applied%20Physics%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B110%26lt%3B%5C%2Fi%26gt%3B%2810%29%2C%20103503.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.3660782%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1063%5C%2F1.3660782%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Microstructure%2C%20optical%20property%2C%20and%20electronic%20band%20structure%20of%20cuprous%20oxide%20thin%20films%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jun-Woo%22%2C%22lastName%22%3A%22Park%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Hyungkeun%22%2C%22lastName%22%3A%22Jang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Hosun%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Joongoo%22%2C%22lastName%22%3A%22Kang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Su-Huai%22%2C%22lastName%22%3A%22Wei%22%7D%5D%2C%22abstractNote%22%3A%22Cuprous%20oxide%20%28Cu2O%29%20thin%20films%20were%20grown%20via%20radio%20frequency%20sputtering%20deposition%20at%20various%20temperatures.%20The%20dielectric%20functions%20and%20luminescence%20properties%20of%20the%20Cu2O%20thin%20films%20were%20measured%20using%20spectroscopic%20ellipsometry%20and%20photoluminescence%2C%20respectively.%20High-energy%20peaks%20were%20observed%20in%20the%20photoluminescence%20spectra.%20Several%20critical%20points%20%28CPs%29%20were%20found%20using%20second%20derivative%20spectra%20of%20the%20dielectric%20functions%20and%20the%20standard%20critical%20point%20model.%20The%20electronic%20band%20structure%20and%20the%20dielectric%20functions%20were%20calculated%20using%20density%20functional%20theory%2C%20and%20the%20CP%20energies%20were%20estimated%20to%20compare%20with%20the%20experimental%20data.%20We%20identified%20the%20high-energy%20photoluminescence%20peaks%20to%20quasi-direct%20transitions%20which%20arose%20from%20the%20granular%20structures%20of%20the%20Cu2O%20thin%20films.%22%2C%22date%22%3A%222011-11-15%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1063%5C%2F1.3660782%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fpubs.aip.org%5C%2Fjap%5C%2Farticle%5C%2F110%5C%2F10%5C%2F103503%5C%2F283507%5C%2FMicrostructure-optical-property-and-electronic%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220021-8979%2C%201089-7550%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A12%3A54Z%22%7D%7D%2C%7B%22key%22%3A%22STRNHZRB%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Yang%20and%20Hu%22%2C%22parsedDate%22%3A%222011-10-06%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BYang%2C%20W.%2C%20%26amp%3B%20Hu%2C%20X.%20%282011%29.%20Comment%20on%20%26%23x201C%3BPlasmon-Enhanced%20Ultraviolet%20Photoluminescence%20from%20Hybrid%20Structures%20of%20Graphene%5C%2FZnO%20Films.%26%23x201D%3B%20%26lt%3Bi%26gt%3BPhysical%20Review%20Letters%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B107%26lt%3B%5C%2Fi%26gt%3B%2815%29%2C%20159701.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1103%5C%2FPhysRevLett.107.159701%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1103%5C%2FPhysRevLett.107.159701%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Comment%20on%20%5Cu201cPlasmon-Enhanced%20Ultraviolet%20Photoluminescence%20from%20Hybrid%20Structures%20of%20Graphene%5C%2FZnO%20Films%5Cu201d%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Wei%22%2C%22lastName%22%3A%22Yang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Xiaodong%22%2C%22lastName%22%3A%22Hu%22%7D%5D%2C%22abstractNote%22%3A%22%22%2C%22date%22%3A%222011-10-6%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1103%5C%2FPhysRevLett.107.159701%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flink.aps.org%5C%2Fdoi%5C%2F10.1103%5C%2FPhysRevLett.107.159701%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220031-9007%2C%201079-7114%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A12%3A52Z%22%7D%7D%2C%7B%22key%22%3A%22P3D8JYXW%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222011-08-12%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20S.%2C%20Shin%2C%20D.%20H.%2C%20Kim%2C%20C.%20O.%2C%20Hong%2C%20S.%20H.%2C%20%26amp%3B%20Choi%2C%20S.-H.%20%282011%29.%20Formation%20Characteristics%20of%20Silica%20Nanowires%20Grown%20by%20Annealing%20Double%20Layers%20of%20ZnO%5C%2FSiOx%20without%20Precursors.%20%26lt%3Bi%26gt%3BJournal%20of%20the%20Korean%20Physical%20Society%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B59%26lt%3B%5C%2Fi%26gt%3B%282%29%2C%20281%26%23x2013%3B284.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.3938%5C%2Fjkps.59.281%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.3938%5C%2Fjkps.59.281%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Formation%20Characteristics%20of%20Silica%20Nanowires%20Grown%20by%20Annealing%20Double%20Layers%20of%20ZnO%5C%2FSiOx%20without%20Precursors%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chang%20Oh%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seung%20Hui%22%2C%22lastName%22%3A%22Hong%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%5D%2C%22abstractNote%22%3A%22%22%2C%22date%22%3A%222011-8-12%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.3938%5C%2Fjkps.59.281%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22http%3A%5C%2F%5C%2Fwww.jkps.or.kr%5C%2Fjournal%5C%2FDOIx.php%3Fid%3D10.3938%5C%2Fjkps.59.281%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220374-4884%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A12%3A51Z%22%7D%7D%2C%7B%22key%22%3A%22HKLAAY2T%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222011-07-08%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20S.%2C%20Hong%2C%20S.%20H.%2C%20Park%2C%20J.%20H.%2C%20Shin%2C%20D.%20Y.%2C%20Shin%2C%20D.%20H.%2C%20Choi%2C%20S.-H.%2C%20%26amp%3B%20Kim%2C%20K.%20J.%20%282011%29.%20Size-%20and%20doping-dependent%20time-resolved%20photoluminescence%20of%20doped%20Si%20nanocrystals.%20%26lt%3Bi%26gt%3BNanotechnology%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B22%26lt%3B%5C%2Fi%26gt%3B%2827%29%2C%20275205.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F0957-4484%5C%2F22%5C%2F27%5C%2F275205%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F0957-4484%5C%2F22%5C%2F27%5C%2F275205%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Size-%20and%20doping-dependent%20time-resolved%20photoluminescence%20of%20doped%20Si%20nanocrystals%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seung%20Hui%22%2C%22lastName%22%3A%22Hong%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jae%20Hee%22%2C%22lastName%22%3A%22Park%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Yeol%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Kyung%20Joong%22%2C%22lastName%22%3A%22Kim%22%7D%5D%2C%22abstractNote%22%3A%22Time-resolved%20photoluminescence%20%28PL%29%20has%20been%20studied%20for%20B-%20and%20Sb-doped%20Si%20nanocrystals%20%28NCs%29%20fabricated%20by%20ion%20beam%20sputtering%20and%20annealing.%20For%20B-doped%20Si%20NCs%2C%20the%20PL%20intensity%20as%20well%20as%20the%20PL%20lifetime%20%28%5Cu03c4PL%29%20increases%20as%20NC%20size%20%28d%29%20varies%20from%201.5%20to%202.6%20nm%2C%20similar%20to%20the%20case%20for%20undoped%20Si%20NCs%2C%20but%20with%20further%20increase%20of%20d%2C%20they%20decrease%2C%20possibly%20resulting%20from%20the%20increase%20of%20optically%20less%20active%20NCs%20with%20the%20increase%20of%20NCs%20containing%20more%20dopants.%20The%20PL%20intensity%20and%20%5Cu03c4PL%20monotonically%20decrease%20with%20increasing%20doping%20concentration%20%28nD%29%2C%20irrespective%20of%20doping%20element.%20Si%20NCs%20show%20smaller%20%5Cu03c4PL%20in%20B%20doping%20than%20in%20Sb%20doping%20over%20the%20full%20range%20of%20nD.%20The%20sharp%20decrease%20in%20PL%20intensity%2C%20accompanied%20by%20the%20gradual%20decrease%20in%20%5Cu03c4PL%20for%20the%20higher%20nD%20of%20Sb%2C%20may%20be%20attributed%20to%20Auger%20recombination%20due%20to%20the%20presence%20of%20Sb%20inside%20Si%20NCs.%20The%20higher%20PL%20quench%20rate%20by%20Sb%20compared%20to%20B%20could%20be%20attributed%20to%20better%20ionization%20of%20Sb%20dopants%20in%20Si%20NCs.%22%2C%22date%22%3A%222011-07-08%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1088%5C%2F0957-4484%5C%2F22%5C%2F27%5C%2F275205%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fiopscience.iop.org%5C%2Farticle%5C%2F10.1088%5C%2F0957-4484%5C%2F22%5C%2F27%5C%2F275205%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220957-4484%2C%201361-6528%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A12%3A48Z%22%7D%7D%5D%7D
Oh Kim, C., Hee Shin, D., Kim, S., Choi, S.-H., Belay, K., & Elliman, R. G. (2011). Effect of (O, As) dual implantation on p-type doping of ZnO films. Journal of Applied Physics, 110(10), 103708. https://doi.org/10.1063/1.3662908
Park, J.-W., Jang, H., Kim, S., Choi, S.-H., Lee, H., Kang, J., & Wei, S.-H. (2011). Microstructure, optical property, and electronic band structure of cuprous oxide thin films. Journal of Applied Physics, 110(10), 103503. https://doi.org/10.1063/1.3660782
Yang, W., & Hu, X. (2011). Comment on “Plasmon-Enhanced Ultraviolet Photoluminescence from Hybrid Structures of Graphene/ZnO Films.” Physical Review Letters, 107(15), 159701. https://doi.org/10.1103/PhysRevLett.107.159701
Kim, S., Shin, D. H., Kim, C. O., Hong, S. H., & Choi, S.-H. (2011). Formation Characteristics of Silica Nanowires Grown by Annealing Double Layers of ZnO/SiOx without Precursors. Journal of the Korean Physical Society, 59(2), 281–284. https://doi.org/10.3938/jkps.59.281
Kim, S., Hong, S. H., Park, J. H., Shin, D. Y., Shin, D. H., Choi, S.-H., & Kim, K. J. (2011). Size- and doping-dependent time-resolved photoluminescence of doped Si nanocrystals. Nanotechnology, 22(27), 275205. https://doi.org/10.1088/0957-4484/22/27/275205
2010
19376884
TCJXIC7M
2010
1
apa
50
date
desc
1442
https://nano.khu.ac.kr/wp-content/plugins/zotpress/
%7B%22status%22%3A%22success%22%2C%22updateneeded%22%3Afalse%2C%22instance%22%3Afalse%2C%22meta%22%3A%7B%22request_last%22%3A0%2C%22request_next%22%3A0%2C%22used_cache%22%3Atrue%7D%2C%22data%22%3A%5B%7B%22key%22%3A%225AR4NXLD%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Hwang%20et%20al.%22%2C%22parsedDate%22%3A%222010-09-15%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BHwang%2C%20S.%20W.%2C%20Shin%2C%20D.%20H.%2C%20Kim%2C%20C.%20O.%2C%20Hong%2C%20S.%20H.%2C%20Kim%2C%20M.%20C.%2C%20Kim%2C%20J.%2C%20Lim%2C%20K.%20Y.%2C%20Kim%2C%20S.%2C%20Choi%2C%20S.-H.%2C%20Ahn%2C%20K.%20J.%2C%20Kim%2C%20G.%2C%20Sim%2C%20S.%20H.%2C%20%26amp%3B%20Hong%2C%20B.%20H.%20%282010%29.%20Plasmon-Enhanced%20Ultraviolet%20Photoluminescence%20from%20Hybrid%20Structures%20of%20Graphene%5C%2FZnO%20Films.%20%26lt%3Bi%26gt%3BPhysical%20Review%20Letters%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B105%26lt%3B%5C%2Fi%26gt%3B%2812%29%2C%20127403.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1103%5C%2FPhysRevLett.105.127403%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1103%5C%2FPhysRevLett.105.127403%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Plasmon-Enhanced%20Ultraviolet%20Photoluminescence%20from%20Hybrid%20Structures%20of%20Graphene%5C%2FZnO%20Films%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%20Won%22%2C%22lastName%22%3A%22Hwang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chang%20Oh%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seung%20Hui%22%2C%22lastName%22%3A%22Hong%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Min%20Choul%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jungkil%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Keun%20Yong%22%2C%22lastName%22%3A%22Lim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Kwang%20Jun%22%2C%22lastName%22%3A%22Ahn%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Gunn%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%20Hyun%22%2C%22lastName%22%3A%22Sim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Byung%20Hee%22%2C%22lastName%22%3A%22Hong%22%7D%5D%2C%22abstractNote%22%3A%22%22%2C%22date%22%3A%222010-9-15%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1103%5C%2FPhysRevLett.105.127403%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flink.aps.org%5C%2Fdoi%5C%2F10.1103%5C%2FPhysRevLett.105.127403%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220031-9007%2C%201079-7114%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A12%3A30Z%22%7D%7D%2C%7B%22key%22%3A%223HQJMUFB%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222010-05-21%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20S.%2C%20Kim%2C%20C.%20O.%2C%20Shin%2C%20D.%20H.%2C%20Hong%2C%20S.%20H.%2C%20Kim%2C%20M.%20C.%2C%20Kim%2C%20J.%2C%20Choi%2C%20S.-H.%2C%20Kim%2C%20T.%2C%20Elliman%2C%20R.%20G.%2C%20%26amp%3B%20Kim%2C%20Y.-M.%20%282010%29.%20Self-assembled%20growth%20and%20luminescence%20of%20crystalline%20Si%5C%2FSiO%26lt%3Bsub%26gt%3B%20%26lt%3Bi%26gt%3Bx%26lt%3B%5C%2Fi%26gt%3B%20%26lt%3B%5C%2Fsub%26gt%3B%20core%26%23x2013%3Bshell%20nanowires.%20%26lt%3Bi%26gt%3BNanotechnology%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B21%26lt%3B%5C%2Fi%26gt%3B%2820%29%2C%20205601.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F0957-4484%5C%2F21%5C%2F20%5C%2F205601%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F0957-4484%5C%2F21%5C%2F20%5C%2F205601%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Self-assembled%20growth%20and%20luminescence%20of%20crystalline%20Si%5C%2FSiO%3Csub%3E%20%3Ci%3Ex%3C%5C%2Fi%3E%20%3C%5C%2Fsub%3E%20core%5Cu2013shell%20nanowires%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22S%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22C%20O%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22D%20H%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22S%20H%22%2C%22lastName%22%3A%22Hong%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22M%20C%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22J%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22S-H%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22T%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22R%20G%22%2C%22lastName%22%3A%22Elliman%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Y-M%22%2C%22lastName%22%3A%22Kim%22%7D%5D%2C%22abstractNote%22%3A%22%22%2C%22date%22%3A%222010-05-21%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1088%5C%2F0957-4484%5C%2F21%5C%2F20%5C%2F205601%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fiopscience.iop.org%5C%2Farticle%5C%2F10.1088%5C%2F0957-4484%5C%2F21%5C%2F20%5C%2F205601%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220957-4484%2C%201361-6528%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A12%3A28Z%22%7D%7D%2C%7B%22key%22%3A%22F9D4FYSU%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Shin%20et%20al.%22%2C%22parsedDate%22%3A%222010-01-29%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BShin%2C%20D.%20H.%2C%20Kim%2C%20S.%2C%20Hong%2C%20S.%20H.%2C%20Choi%2C%20S.-H.%2C%20%26amp%3B%20Kim%2C%20K.%20J.%20%282010%29.%20Control%20of%20amorphous%20silica%20nanowire%20growth%20by%20oxygen%20content%20of%20Si-rich%20oxide.%20%26lt%3Bi%26gt%3BNanotechnology%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B21%26lt%3B%5C%2Fi%26gt%3B%284%29%2C%20045604.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F0957-4484%5C%2F21%5C%2F4%5C%2F045604%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1088%5C%2F0957-4484%5C%2F21%5C%2F4%5C%2F045604%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Control%20of%20amorphous%20silica%20nanowire%20growth%20by%20oxygen%20content%20of%20Si-rich%20oxide%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Dong%20Hee%22%2C%22lastName%22%3A%22Shin%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Seung%20Hui%22%2C%22lastName%22%3A%22Hong%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Kyung%20Joong%22%2C%22lastName%22%3A%22Kim%22%7D%5D%2C%22abstractNote%22%3A%22Ni-coated%20Si-rich%20oxide%20%28SRO%2C%20SiOx%20%29%20on%20a%20p-type%20Si%20wafer%20has%20been%20annealed%20with%20Si%20powder%20to%20grow%20silica%20nanowires%20%28NWs%29%2C%20which%20have%20a%20composition%20of%20stoichiometric%20SiO2%2C%20irrespective%20of%20x.%20The%20diameters%20of%20the%20NWs%20are%20well%20controlled%20from%2082%20to%2023%20nm%20by%20increasing%20x%20from%200.4%20to%201.2%20and%20they%20have%20a%20uniform%20distribution%20at%20a%20%5Cufb01xed%20x.%20These%20results%20suggest%20that%20the%20oxygen%20content%20%28x%29%20plays%20a%20crucial%20role%20in%20determining%20the%20diameter%20of%20the%20NWs%20at%20the%20early%20stage%20of%20the%20NW%20formation.%20The%20growth%20behaviors%20of%20the%20NWs%20are%20explained%20well%20based%20on%20a%20modi%5Cufb01ed%20vapor%5Cu2013liquid%5Cu2013solid%20mechanism.%22%2C%22date%22%3A%222010-01-29%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1088%5C%2F0957-4484%5C%2F21%5C%2F4%5C%2F045604%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fiopscience.iop.org%5C%2Farticle%5C%2F10.1088%5C%2F0957-4484%5C%2F21%5C%2F4%5C%2F045604%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220957-4484%2C%201361-6528%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A12%3A26Z%22%7D%7D%2C%7B%22key%22%3A%22UCCVPJ3V%22%2C%22library%22%3A%7B%22id%22%3A19376884%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kim%20et%20al.%22%2C%22parsedDate%22%3A%222010%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20padding-left%3A%201em%3B%20text-indent%3A-1em%3B%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%26gt%3BKim%2C%20C.%20O.%2C%20Kim%2C%20S.%2C%20Oh%2C%20H.%20T.%2C%20Choi%2C%20S.-H.%2C%20Shon%2C%20Y.%2C%20Lee%2C%20S.%2C%20Hwang%2C%20H.%20N.%2C%20%26amp%3B%20Hwang%2C%20C.-C.%20%282010%29.%20Effect%20of%20electrical%20conduction%20properties%20on%20magnetic%20behaviors%20of%20Cu-doped%20ZnO%20thin%20films.%20%26lt%3Bi%26gt%3BPhysica%20B%3A%20Condensed%20Matter%26lt%3B%5C%2Fi%26gt%3B%2C%20%26lt%3Bi%26gt%3B405%26lt%3B%5C%2Fi%26gt%3B%2822%29%2C%204678%26%23x2013%3B4681.%20%26lt%3Ba%20class%3D%26%23039%3Bzp-DOIURL%26%23039%3B%20href%3D%26%23039%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.physb.2010.08.061%26%23039%3B%26gt%3Bhttps%3A%5C%2F%5C%2Fdoi.org%5C%2F10.1016%5C%2Fj.physb.2010.08.061%26lt%3B%5C%2Fa%26gt%3B%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22Effect%20of%20electrical%20conduction%20properties%20on%20magnetic%20behaviors%20of%20Cu-doped%20ZnO%20thin%20films%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chang%20Oh%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sung%22%2C%22lastName%22%3A%22Kim%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Hyoung%20Taek%22%2C%22lastName%22%3A%22Oh%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Suk-Ho%22%2C%22lastName%22%3A%22Choi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Yoon%22%2C%22lastName%22%3A%22Shon%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Sejoon%22%2C%22lastName%22%3A%22Lee%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Han%20Na%22%2C%22lastName%22%3A%22Hwang%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Chan-Cuk%22%2C%22lastName%22%3A%22Hwang%22%7D%5D%2C%22abstractNote%22%3A%22The%20in%5Cufb02uence%20of%20electrical%20conduction%20properties%20of%20Cu-doped%20ZnO%20%28ZnO%3ACu%29%20thin%20%5Cufb01lms%20on%20their%20magnetic%20behaviors%20was%20investigated.%20The%20electrical%20properties%20were%20controlled%20from%20n-type%20to%20p-type%20by%20changing%20Cu%20concentration%20%28nCu%29%2C%20which%20was%20analyzed%20by%20Hall-effect%20measurements%20and%20X-ray%20photoelectron%20spectroscopy.%20The%20p-type%20samples%20with%20nCu%20Z%201%20mol%25%20were%20obviously%20ferromagnetic%2C%20whilst%20the%20n-type%20samples%20with%20nCur%200.75%20mol%25%20exhibited%20paramagnetism.%20By%20increasing%20nCu%20from%201%20to%203%20mol%25%2C%20the%20ferromagnetic%20properties%20were%20observed%20to%20be%20degraded%20due%20to%20the%20existence%20of%20Cu%20and%20CuO2%20antiferromagnetic%20clusters.%20These%20results%20suggest%20that%20hole%20carriers%20help%20to%20couple%20the%20ferromagnetic%20channels%20in%20ZnO%3ACu.%22%2C%22date%22%3A%2211%5C%2F2010%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1016%5C%2Fj.physb.2010.08.061%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Flinkinghub.elsevier.com%5C%2Fretrieve%5C%2Fpii%5C%2FS0921452610008318%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%2209214526%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22TCJXIC7M%22%5D%2C%22dateModified%22%3A%222026-01-18T10%3A12%3A32Z%22%7D%7D%5D%7D
Hwang, S. W., Shin, D. H., Kim, C. O., Hong, S. H., Kim, M. C., Kim, J., Lim, K. Y., Kim, S., Choi, S.-H., Ahn, K. J., Kim, G., Sim, S. H., & Hong, B. H. (2010). Plasmon-Enhanced Ultraviolet Photoluminescence from Hybrid Structures of Graphene/ZnO Films. Physical Review Letters, 105(12), 127403. https://doi.org/10.1103/PhysRevLett.105.127403
Kim, S., Kim, C. O., Shin, D. H., Hong, S. H., Kim, M. C., Kim, J., Choi, S.-H., Kim, T., Elliman, R. G., & Kim, Y.-M. (2010). Self-assembled growth and luminescence of crystalline Si/SiO x core–shell nanowires. Nanotechnology, 21(20), 205601. https://doi.org/10.1088/0957-4484/21/20/205601
Shin, D. H., Kim, S., Hong, S. H., Choi, S.-H., & Kim, K. J. (2010). Control of amorphous silica nanowire growth by oxygen content of Si-rich oxide. Nanotechnology, 21(4), 045604. https://doi.org/10.1088/0957-4484/21/4/045604
Kim, C. O., Kim, S., Oh, H. T., Choi, S.-H., Shon, Y., Lee, S., Hwang, H. N., & Hwang, C.-C. (2010). Effect of electrical conduction properties on magnetic behaviors of Cu-doped ZnO thin films. Physica B: Condensed Matter, 405(22), 4678–4681. https://doi.org/10.1016/j.physb.2010.08.061
Before 2010
19376884
TCJXIC7M
2009,2008,2007,2006,2005,2004,2003,2002
1
apa
50
date
desc
1442
https://nano.khu.ac.kr/wp-content/plugins/zotpress/