Journal Articles
These efforts are documented in peer-reviewed journals, advancing both fundamental physics and applied optoelectronics.
Dimensionality- and topology-driven metal-insulator transition of topological Bi0.96Sb0.04 thin films
Achiral two-dimensional perovskite exhibiting giant circularly polarized luminescence and circular photogalvanic effect.
Composition-tunable valley polarization in monolayer Mo1-xWxS2 alloys
We report a systematic study of excitonic resonance and valley polarization in monolayer Mo1-xWxS2 alloys with compositions x = 0, 0.4, 0.6, and 1.0. Monolayers prepared by mechanical exfoliation were characterized by microscopy, Raman, and X-ray photoelectron spectroscopy.
Temperature-driven crossover of excitonic radiative channels and valley polarization in monolayer WS₂
We perform helicity-resolved photoluminescence spectroscopy on unencapsulated exfoliated monolayer WS₂ on SiO₂/Si, a technologically relevant baseline platform for scalable devices, over a wide temperature range from 80 to 360 K, using both co- and cross-circular polarization detection.
Experimental manifestation of topological lifshitz transition by observing thickness-dependent shift of plasma frequency in topological semimetals.
In this study, we observe a topological LT in epitaxial thin films of Bi0.96Sb0.04 without external excitations, where the TSM characteristics are retained throughout the transition.
Circular photogalvanic effect in two-dimensional Weyl semimetals
A 2D Weyl semimetal is realized in Bi₀.₉₆Sb₀.₀₄ thin films through a thickness-dependent topological phase transition induced by inversion symmetry breaking.

Strong Enhancement of Light Emission in Core–Shell InGaN/GaN Multi-Quantum-Well Nanowire Light-Emitting Diodes by Incorporating Graphene Quantum Dots
Our findings highlight remarkable enhancement of light emission from GaN MQW NW LEDs by a simple approach of incorporating GQDs in the MQWs and on the p-GaN surface, also very promising for applications in a wide range of optoelectronic devices.
Possible permanent Dirac- to Weyl-semimetal phase transition by ion implantation.
Our findings demonstrate the first realization of a possible permanent DSM-to-WSM phase transition in a single material by the simple approach of implantation using nonmagnetic elements.
Growth of two-dimensional Janus MoSSe by a single in situ process without initial or follow-up treatments
The growth mechanism is clarified by a separate annealing experiment that does not involve a supply of activated atoms. These results highlight a simple and cost-effective approach for growing Janus MoSSe, which is more useful for fundamental studies and device applications.